Single FETs, MOSFETs

Results: 2
Manufacturer
Nexperia USA Inc.onsemi
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
Drain to Source Voltage (Vdss)
30 V50 V
Current - Continuous Drain (Id) @ 25°C
200mA (Ta)4.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V5V
Rds On (Max) @ Id, Vgs
36mOhm @ 4.5A, 10V3.5Ohm @ 200mA, 5V
Vgs(th) (Max) @ Id
1.5V @ 1mA2V @ 250µA
Input Capacitance (Ciss) (Max) @ Vds
50 pF @ 25 V209 pF @ 15 V
Power Dissipation (Max)
225mW (Ta)510mW (Ta), 5W (Tc)
Supplier Device Package
SOT-23-3 (TO-236)TO-236AB
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
SOT 23-3
BSS138LT1G
MOSFET N-CH 50V 200MA SOT23-3
onsemi
132,861
In Stock
402,000
Factory
1 : ¥3.12000
Cut Tape (CT)
3,000 : ¥0.52959
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
50 V
200mA (Ta)
5V
3.5Ohm @ 200mA, 5V
1.5V @ 1mA
-
±20V
50 pF @ 25 V
-
225mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-3 (TO-236)
TO-236-3, SC-59, SOT-23-3
TO-236AB
PMV37EN2R
MOSFET N-CH 30V 4.5A TO236AB
Nexperia USA Inc.
20,633
In Stock
1 : ¥3.45000
Cut Tape (CT)
3,000 : ¥0.77033
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
30 V
4.5A (Ta)
4.5V, 10V
36mOhm @ 4.5A, 10V
2V @ 250µA
6.3 nC @ 10 V
±20V
209 pF @ 15 V
-
510mW (Ta), 5W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
TO-236AB
TO-236-3, SC-59, SOT-23-3
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of 2

Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.