Single FETs, MOSFETs

Results: 2
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
FET Type
N-ChannelP-Channel
Drain to Source Voltage (Vdss)
50 V60 V
Current - Continuous Drain (Id) @ 25°C
180mA (Ta)300mA (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V5V, 10V
Rds On (Max) @ Id, Vgs
5Ohm @ 500mA, 10V7.5Ohm @ 100mA, 10V
Vgs(th) (Max) @ Id
2.1V @ 250µA2.5V @ 250µA
Input Capacitance (Ciss) (Max) @ Vds
36 pF @ 25 V50 pF @ 10 V
Power Dissipation (Max)
350mW (Ta)830mW (Tc)
Operating Temperature
-65°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Grade
Qualification
Mounting Type
Supplier Device Package
Package / Case
TO-236AB
BSS84AKVL
MOSFET P-CH 50V 180MA TO236AB
Nexperia USA Inc.
13,322
In Stock
1 : ¥1.64000
Cut Tape (CT)
10,000 : ¥0.21356
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
50 V
180mA (Ta)
5V, 10V
7.5Ohm @ 100mA, 10V
2.1V @ 250µA
0.35 nC @ 5 V
±20V
36 pF @ 25 V
-
350mW (Ta)
-55°C ~ 150°C (TJ)
Automotive
AEC-Q101
Surface Mount
TO-236AB
TO-236-3, SC-59, SOT-23-3
TO-236AB
2N7002HR
2N7002H/SOT23/TO-236AB
Nexperia USA Inc.
9,429
In Stock
1 : ¥1.89000
Cut Tape (CT)
3,000 : ¥0.31427
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
60 V
300mA (Tc)
4.5V, 10V
5Ohm @ 500mA, 10V
2.5V @ 250µA
-
±20V
50 pF @ 10 V
-
830mW (Tc)
-65°C ~ 150°C (TJ)
Automotive
AEC-Q101
Surface Mount
TO-236AB
TO-236-3, SC-59, SOT-23-3
Showing
of 2

Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.