Single FETs, MOSFETs

Results: 6
Manufacturer
Diodes IncorporatedEPCInfineon TechnologiesToshiba Semiconductor and StorageVishay Siliconix
Series
-eGaN®OptiMOS™TrenchFET®U-MOSIIIU-MOSVI
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
FET Type
N-ChannelP-Channel
Technology
GaNFET (Gallium Nitride)MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
8 V20 V30 V60 V100 V
Current - Continuous Drain (Id) @ 25°C
2.6A (Ta)3.2A (Ta)3.4A (Ta)5.8A (Tc)18A (Ta), 40A (Tc)29A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
1.5V, 4.5V1.8V, 4.5V2.5V, 4.5V5V6V, 10V
Rds On (Max) @ Id, Vgs
3.9mOhm @ 20A, 10V6mOhm @ 16A, 5V35mOhm @ 4.4A, 4.5V47mOhm @ 2A, 4.5V59mOhm @ 3A, 4.5V67mOhm @ 2.5A, 4.5V
Vgs(th) (Max) @ Id
1V @ 1mA1V @ 250µA1.5V @ 250µA2.5V @ 4mA3.3V @ 36µA
Gate Charge (Qg) (Max) @ Vgs
4.6 nC @ 4.5 V7.4 nC @ 5 V10.4 nC @ 4.5 V10.8 nC @ 4.5 V30 nC @ 8 V34 nC @ 10 V
Vgs (Max)
+6V, -4V±8V±10V±12V±20V
Input Capacitance (Ciss) (Max) @ Vds
447 pF @ 10 V510 pF @ 10 V630 pF @ 10 V851 pF @ 50 V960 pF @ 4 V2500 pF @ 30 V
Power Dissipation (Max)
500mW (Ta)960mW (Ta), 1.7W (Tc)2.1W (Ta), 69W (Tc)-
Operating Temperature
-55°C ~ 150°C (TJ)-40°C ~ 150°C (TJ)150°C (TJ)
Supplier Device Package
DieES6PG-TSDSON-8-34SOT-23-3 (TO-236)SOT-323
Package / Case
8-PowerVDFNDieSC-70, SOT-323SOT-563, SOT-666TO-236-3, SC-59, SOT-23-3
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
SOT-23-3
SI2305CDS-T1-GE3
MOSFET P-CH 8V 5.8A SOT23-3
Vishay Siliconix
39,611
In Stock
1 : ¥3.61000
Cut Tape (CT)
3,000 : ¥0.97322
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
8 V
5.8A (Tc)
1.8V, 4.5V
35mOhm @ 4.4A, 4.5V
1V @ 250µA
30 nC @ 8 V
±8V
960 pF @ 4 V
-
960mW (Ta), 1.7W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-3 (TO-236)
TO-236-3, SC-59, SOT-23-3
EPC2204
EPC2204
TRANS GAN 100V DIE 5.6MOHM
EPC
5,532
In Stock
1 : ¥19.78000
Cut Tape (CT)
2,500 : ¥8.93236
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
GaNFET (Gallium Nitride)
100 V
29A (Ta)
5V
6mOhm @ 16A, 5V
2.5V @ 4mA
7.4 nC @ 5 V
+6V, -4V
851 pF @ 50 V
-
-
-40°C ~ 150°C (TJ)
Surface Mount
Die
Die
SOT-323
DMN3067LW-7
MOSFET N-CH 30V 2.6A SOT-323
Diodes Incorporated
8,174
In Stock
1,680,000
Factory
1 : ¥3.28000
Cut Tape (CT)
3,000 : ¥0.73170
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
30 V
2.6A (Ta)
2.5V, 4.5V
67mOhm @ 2.5A, 4.5V
1.5V @ 250µA
4.6 nC @ 4.5 V
±12V
447 pF @ 10 V
-
500mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
SOT-323
SC-70, SOT-323
TSDSON-8
BSZ039N06NSATMA1
MOSFET N-CH 60V 18A/40A TSDSON
Infineon Technologies
2,696
In Stock
1 : ¥13.79000
Cut Tape (CT)
5,000 : ¥5.23371
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
60 V
18A (Ta), 40A (Tc)
6V, 10V
3.9mOhm @ 20A, 10V
3.3V @ 36µA
34 nC @ 10 V
±20V
2500 pF @ 30 V
-
2.1W (Ta), 69W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
PG-TSDSON-8-34
8-PowerVDFN
0
In Stock
Check Lead Time
1 : ¥4.19000
Cut Tape (CT)
4,000 : ¥1.12058
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
20 V
3.2A (Ta)
1.5V, 4.5V
47mOhm @ 2A, 4.5V
1V @ 1mA
10.8 nC @ 4.5 V
±10V
510 pF @ 10 V
-
500mW (Ta)
150°C (TJ)
Surface Mount
ES6
SOT-563, SOT-666
27
In Stock
1 : ¥3.53000
Cut Tape (CT)
4,000 : ¥0.84357
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
20 V
3.4A (Ta)
1.5V, 4.5V
59mOhm @ 3A, 4.5V
1V @ 1mA
10.4 nC @ 4.5 V
±8V
630 pF @ 10 V
-
500mW (Ta)
150°C (TJ)
Surface Mount
ES6
SOT-563, SOT-666
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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.