Single FETs, MOSFETs

Results: 2
Manufacturer
Diodes IncorporatedVishay Siliconix
Series
-TrenchFET®
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
Current - Continuous Drain (Id) @ 25°C
1.5A (Ta)110A (Tc)
Rds On (Max) @ Id, Vgs
6.9mOhm @ 30A, 10V350mOhm @ 900mA, 10V
Gate Charge (Qg) (Max) @ Vgs
4.1 nC @ 10 V345 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
206 pF @ 30 V11400 pF @ 25 V
Power Dissipation (Max)
720mW (Ta)3.75W (Ta), 375W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)-55°C ~ 175°C (TJ)
Supplier Device Package
SOT-23-3TO-263 (D2PAK)
Package / Case
TO-236-3, SC-59, SOT-23-3TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Stocking Options
Environmental Options
Media
Marketplace Product
2Results
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Grade
Qualification
Mounting Type
Supplier Device Package
Package / Case
TO-263 (D2Pak)
SUM110P06-07L-E3
MOSFET P-CH 60V 110A TO263
Vishay Siliconix
65,815
In Stock
1 : ¥30.13000
Cut Tape (CT)
800 : ¥18.18145
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
60 V
110A (Tc)
4.5V, 10V
6.9mOhm @ 30A, 10V
3V @ 250µA
345 nC @ 10 V
±20V
11400 pF @ 25 V
-
3.75W (Ta), 375W (Tc)
-55°C ~ 175°C (TJ)
-
-
Surface Mount
TO-263 (D2PAK)
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
SOT-23-3
DMP6350S-7
MOSFET P-CH 60V 1.5A SOT23
Diodes Incorporated
61,729
In Stock
957,000
Factory
1 : ¥3.61000
Cut Tape (CT)
3,000 : ¥1.20464
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
60 V
1.5A (Ta)
4.5V, 10V
350mOhm @ 900mA, 10V
3V @ 250µA
4.1 nC @ 10 V
±20V
206 pF @ 30 V
-
720mW (Ta)
-55°C ~ 150°C (TJ)
Automotive
AEC-Q101
Surface Mount
SOT-23-3
TO-236-3, SC-59, SOT-23-3
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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.