Single FETs, MOSFETs

Results: 2
Series
CoolMOS™ P7SIPMOS®
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)Tube
FET Type
N-ChannelP-Channel
Drain to Source Voltage (Vdss)
60 V600 V
Current - Continuous Drain (Id) @ 25°C
1.9A (Ta)48A (Tc)
Rds On (Max) @ Id, Vgs
60mOhm @ 15.9A, 10V300mOhm @ 1.9A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA4V @ 800µA
Gate Charge (Qg) (Max) @ Vgs
14 nC @ 10 V67 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
410 pF @ 25 V2895 pF @ 400 V
Power Dissipation (Max)
1.8W (Ta)164W (Tc)
Mounting Type
Surface MountThrough Hole
Supplier Device Package
PG-SOT223-4PG-TO247-3
Package / Case
TO-247-3TO-261-4, TO-261AA
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
PG-TO247-3
IPW60R060P7XKSA1
MOSFET N-CH 600V 48A TO247-3
Infineon Technologies
213
In Stock
1 : ¥50.49000
Tube
Tube
Active
N-Channel
MOSFET (Metal Oxide)
600 V
48A (Tc)
10V
60mOhm @ 15.9A, 10V
4V @ 800µA
67 nC @ 10 V
±20V
2895 pF @ 400 V
-
164W (Tc)
-55°C ~ 150°C (TJ)
Through Hole
PG-TO247-3
TO-247-3
SOT-223-4
BSP170PH6327XTSA1
MOSFET P-CH 60V 1.9A SOT223-4
Infineon Technologies
13,694
In Stock
1 : ¥7.47000
Cut Tape (CT)
1,000 : ¥3.17201
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
P-Channel
MOSFET (Metal Oxide)
60 V
1.9A (Ta)
10V
300mOhm @ 1.9A, 10V
4V @ 250µA
14 nC @ 10 V
±20V
410 pF @ 25 V
-
1.8W (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
PG-SOT223-4
TO-261-4, TO-261AA
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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.