Single FETs, MOSFETs

Results: 2
Manufacturer
Diodes IncorporatedVishay Siliconix
Series
-TrenchFET®
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
Current - Continuous Drain (Id) @ 25°C
30A (Tc)53.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V8V, 10V
Rds On (Max) @ Id, Vgs
17mOhm @ 10A, 10V17mOhm @ 12A, 10V
Vgs(th) (Max) @ Id
3V @ 250µA4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
34 nC @ 10 V45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
1825 pF @ 40 V1949 pF @ 40 V
Power Dissipation (Max)
3.1W (Ta)5W (Ta), 62.5W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)-55°C ~ 175°C (TJ)
Supplier Device Package
PowerDI5060-8 (Type Q)PowerPAK® SO-8
Package / Case
8-PowerTDFNPowerPAK® SO-8
Stocking Options
Environmental Options
Media
Marketplace Product
2Results

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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
PowerPAK SO-8
SI7852ADP-T1-GE3
MOSFET N-CH 80V 30A PPAK SO-8
Vishay Siliconix
8,398
In Stock
1 : ¥17.73000
Cut Tape (CT)
3,000 : ¥8.00988
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
80 V
30A (Tc)
8V, 10V
17mOhm @ 10A, 10V
4.5V @ 250µA
45 nC @ 10 V
±20V
1825 pF @ 40 V
-
5W (Ta), 62.5W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
PowerPAK® SO-8
PowerPAK® SO-8
14 Power
DMTH8012LPSW-13
MOSFET N-CH 80V 53.7A PWRDI5060
Diodes Incorporated
2,395
In Stock
12,500
Factory
1 : ¥7.64000
Cut Tape (CT)
2,500 : ¥2.90084
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
80 V
53.7A (Tc)
4.5V, 10V
17mOhm @ 12A, 10V
3V @ 250µA
34 nC @ 10 V
±20V
1949 pF @ 40 V
-
3.1W (Ta)
-55°C ~ 175°C (TJ)
Surface Mount
PowerDI5060-8 (Type Q)
8-PowerTDFN
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of 2

Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.