Single FETs, MOSFETs

Results: 2
Manufacturer
EPCNexperia USA Inc.
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
Product Status
ActiveObsolete
Technology
GaNFET (Gallium Nitride)MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
20 V65 V
Current - Continuous Drain (Id) @ 25°C
500mA (Ta)5.4A (Tj)
Drive Voltage (Max Rds On, Min Rds On)
2.5V, 4.5V5V
Rds On (Max) @ Id, Vgs
3.3Ohm @ 59mA, 5V-
Vgs(th) (Max) @ Id
2.5V @ 100µA-
Gate Charge (Qg) (Max) @ Vgs
0.064 nC @ 5 V6.2 nC @ 4.5 V
Vgs (Max)
±8V-
Power Dissipation (Max)
400mW-
Operating Temperature
-40°C ~ 150°C (TJ)150°C (TJ)
Supplier Device Package
4-WLCSP (0.78x0.78)Die
Package / Case
4-XFBGA, WLCSPDie
Stocking Options
Environmental Options
Media
Marketplace Product
2Results

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of 2
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
EPC2219
EPC2219
TRANS GAN 65V AECQ101 3.3OHM DIE
EPC
7,919
In Stock
1 : ¥8.05000
Cut Tape (CT)
2,500 : ¥4.31018
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
GaNFET (Gallium Nitride)
65 V
500mA (Ta)
5V
3.3Ohm @ 59mA, 5V
2.5V @ 100µA
0.064 nC @ 5 V
-
10 pF @ 32.5 V
-
-
-40°C ~ 150°C (TJ)
Surface Mount
Die
Die
WLCSP4
PMCM4401UNEZ
MOSFET N-CH 20V 4WLCSP
Nexperia USA Inc.
46,123
In Stock
1 : ¥3.61000
Cut Tape (CT)
9,000 : ¥0.83799
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Obsolete
N-Channel
MOSFET (Metal Oxide)
20 V
5.4A (Tj)
2.5V, 4.5V
-
-
6.2 nC @ 4.5 V
±8V
-
-
400mW
150°C (TJ)
Surface Mount
4-WLCSP (0.78x0.78)
4-XFBGA, WLCSP
Showing
of 2

Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.