Single FETs, MOSFETs

Results: 3

Filters

Stacked

Scrolling

Showing

of 3

Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Grade	Qualification	Mounting Type	Supplier Device Package	Package / Case

BSS138P,215 MOSFET N-CH 60V 360MA TO236AB Nexperia USA Inc.	820,867 In Stock	1 : ¥2.05000 Cut Tape (CT) 3,000 : ¥0.34430 Tape & Reel (TR)	TrenchMOS™	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	60 V	360mA (Ta)	10V	1.6Ohm @ 300mA, 10V	1.5V @ 250µA	0.8 nC @ 4.5 V	±20V	50 pF @ 10 V	-	350mW (Ta), 1.14W (Tc)	-55°C ~ 150°C (TA)	Automotive	AEC-Q101	Surface Mount	TO-236AB	TO-236-3, SC-59, SOT-23-3
BSS138 MOSFET N-CH 50V 220MA SOT23-3 onsemi	169,157 In Stock	1 : ¥2.87000 Cut Tape (CT) 3,000 : ¥0.48925 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	50 V	220mA (Ta)	4.5V, 10V	3Ohm @ 500mA, 10V	1.6V @ 250µA	2.4 nC @ 10 V	±20V	27 pF @ 25 V	-	350mW (Ta)	150°C (TJ)	-	-	Surface Mount	SOT-23-3	TO-236-3, SC-59, SOT-23-3
BSS138 N-CHANNEL ENHANCEMENT MODE MOSFE ANBON SEMICONDUCTOR (INT'L) LIMITED	102,076 In Stock	1 : ¥1.31000 Cut Tape (CT) 3,000 : ¥0.22871 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	50 V	220mA (Ta)	4.5V, 10V	3Ohm @ 500mA, 10V	1.6V @ 250µA	-	±20V	27 pF @ 25 V	-	350mW (Ta)	150°C (TJ)	-	-	Surface Mount	SOT-23	TO-236-3, SC-59, SOT-23-3

Showing

of 3

Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.