Single FETs, MOSFETs

Results: 2
Manufacturer
Nexperia USA Inc.onsemi
Series
-TrenchMOS™
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
Drain to Source Voltage (Vdss)
30 V60 V
Current - Continuous Drain (Id) @ 25°C
360mA (Ta)2.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
2.5V, 4.5V10V
Rds On (Max) @ Id, Vgs
65mOhm @ 2.2A, 4.5V1.6Ohm @ 300mA, 10V
Vgs(th) (Max) @ Id
1V @ 250µA1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
0.8 nC @ 4.5 V9 nC @ 4.5 V
Vgs (Max)
±8V±20V
Input Capacitance (Ciss) (Max) @ Vds
50 pF @ 10 V300 pF @ 10 V
Power Dissipation (Max)
350mW (Ta), 1.14W (Tc)500mW (Ta)
Operating Temperature
-55°C ~ 150°C (TA)-55°C ~ 150°C (TJ)
Supplier Device Package
SOT-23-3TO-236AB
Stocking Options
Environmental Options
Media
Marketplace Product
2Results

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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Grade
Qualification
Mounting Type
Supplier Device Package
Package / Case
TO-236AB
BSS138P,215
MOSFET N-CH 60V 360MA TO236AB
Nexperia USA Inc.
833,816
In Stock
1 : ¥2.05000
Cut Tape (CT)
3,000 : ¥0.34430
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
60 V
360mA (Ta)
10V
1.6Ohm @ 300mA, 10V
1.5V @ 250µA
0.8 nC @ 4.5 V
±20V
50 pF @ 10 V
-
350mW (Ta), 1.14W (Tc)
-55°C ~ 150°C (TA)
Automotive
AEC-Q101
Surface Mount
TO-236AB
TO-236-3, SC-59, SOT-23-3
SOT-23-3
FDN337N
MOSFET N-CH 30V 2.2A SUPERSOT3
onsemi
1,308
In Stock
1 : ¥4.10000
Cut Tape (CT)
3,000 : ¥1.36976
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
N-Channel
MOSFET (Metal Oxide)
30 V
2.2A (Ta)
2.5V, 4.5V
65mOhm @ 2.2A, 4.5V
1V @ 250µA
9 nC @ 4.5 V
±8V
300 pF @ 10 V
-
500mW (Ta)
-55°C ~ 150°C (TJ)
-
-
Surface Mount
SOT-23-3
TO-236-3, SC-59, SOT-23-3
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of 2

Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.