Single FETs, MOSFETs

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case

BSC117N08NS5ATMA1 MOSFET N-CH 80V 49A TDSON Infineon Technologies	22,592 In Stock	1 : ¥12.89000 Cut Tape (CT) 5,000 : ¥5.08978 Tape & Reel (TR)	OptiMOS™	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	80 V	49A (Tc)	6V, 10V	11.7mOhm @ 25A, 10V	3.8V @ 22µA	18 nC @ 10 V	±20V	1300 pF @ 40 V	-	2.5W (Ta), 50W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	PG-TDSON-8-7	8-PowerTDFN
IRF150P221AKMA1 MOSFET N-CH 150V 186A TO247-3 Infineon Technologies	398 In Stock	1 : ¥62.39000 Tube	StrongIRFET™	Tube	Active	N-Channel	MOSFET (Metal Oxide)	150 V	186A (Tc)	10V	4.5mOhm @ 100A, 10V	4.6V @ 264µA	100 nC @ 10 V	±20V	6000 pF @ 75 V	-	3.8W (Ta), 341W (Tc)	-55°C ~ 175°C (TJ)	Through Hole	PG-TO247-3	TO-247-3
MSC015SMA070B4 TRANS SJT N-CH 700V 140A TO247-4 Microchip Technology	46 In Stock	1 : ¥302.43000 Tube	-	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	700 V	140A (Tc)	20V	19mOhm @ 40A, 20V	2.4V @ 4mA	215 nC @ 20 V	+23V, -10V	4500 pF @ 700 V	-	455W (Tc)	-55°C ~ 175°C (TJ)	Through Hole	TO-247-4	TO-247-4

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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.