Single FETs, MOSFETs

Results: 2
FET Type
N-ChannelP-Channel
Rds On (Max) @ Id, Vgs
540mOhm @ 600mA, 10V600mOhm @ 600mA, 10V
Gate Charge (Qg) (Max) @ Vgs
8.3 nC @ 10 V18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
180 pF @ 25 V390 pF @ 25 V
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
FET Type
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Input Capacitance (Ciss) (Max) @ Vds
FET Feature
Power Dissipation (Max)
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
4-DIP
IRFD9120PBF
MOSFET P-CH 100V 1A 4DIP
Vishay Siliconix
46,921
In Stock
1 : ¥12.40000
Tube
-
Tube
Last Time Buy
P-Channel
MOSFET (Metal Oxide)
100 V
1A (Ta)
10V
600mOhm @ 600mA, 10V
4V @ 250µA
18 nC @ 10 V
±20V
390 pF @ 25 V
-
1.3W (Ta)
-55°C ~ 175°C (TJ)
Through Hole
4-HVMDIP
4-DIP (0.300", 7.62mm)
4-DIP
IRFD110PBF
MOSFET N-CH 100V 1A 4DIP
Vishay Siliconix
11,243
In Stock
1 : ¥13.30000
Tube
-
Tube
Last Time Buy
N-Channel
MOSFET (Metal Oxide)
100 V
1A (Ta)
10V
540mOhm @ 600mA, 10V
4V @ 250µA
8.3 nC @ 10 V
±20V
180 pF @ 25 V
-
1.3W (Ta)
-55°C ~ 175°C (TJ)
Through Hole
4-HVMDIP
4-DIP (0.300", 7.62mm)
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Single FETs, MOSFETs


Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.