Single FETs, MOSFETs

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case

EPC2052 GANFET N-CH 100V 8.2A DIE EPC	134,701 In Stock	1 : ¥12.48000 Cut Tape (CT) 2,500 : ¥5.62446 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	GaNFET (Gallium Nitride)	100 V	8.2A (Ta)	5V	13.5mOhm @ 11A, 5V	2.5V @ 3mA	4.5 nC @ 5 V	+6V, -4V	575 pF @ 50 V	-	-	-40°C ~ 150°C (TJ)	Surface Mount	Die	Die
G3R160MT17D SIC MOSFET N-CH 21A TO247-3 GeneSiC Semiconductor	1,027 In Stock	1 : ¥100.49000 Tube	G3R™	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1700 V	21A (Tc)	15V	208mOhm @ 12A, 15V	2.7V @ 5mA	51 nC @ 15 V	±15V	1272 pF @ 1000 V	-	175W (Tc)	-55°C ~ 175°C (TJ)	Through Hole	TO-247-3	TO-247-3
UJ4C075018K4S SICFET N-CH 750V 81A TO247-4 Qorvo	500 In Stock	1 : ¥151.88000 Tube	-	Tube	Active	N-Channel	SiCFET (Cascode SiCJFET)	750 V	81A (Tc)	-	23mOhm @ 20A, 12V	6V @ 10mA	37.8 nC @ 15 V	±20V	1422 pF @ 100 V	-	385W (Tc)	-55°C ~ 175°C (TJ)	Through Hole	TO-247-4	TO-247-4

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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.