Single FETs, MOSFETs

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case

IRF9530NPBF MOSFET P-CH 100V 14A TO220AB Infineon Technologies	33,287 In Stock	1 : ¥7.63000 Tube	HEXFET®	Tube	Active	P-Channel	MOSFET (Metal Oxide)	100 V	14A (Tc)	10V	200mOhm @ 8.4A, 10V	4V @ 250µA	58 nC @ 10 V	±20V	760 pF @ 25 V	-	79W (Tc)	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
IRF9540NPBF MOSFET P-CH 100V 23A TO220AB Infineon Technologies	5,255 In Stock	1 : ¥11.41000 Tube	HEXFET®	Tube	Active	P-Channel	MOSFET (Metal Oxide)	100 V	23A (Tc)	10V	117mOhm @ 11A, 10V	4V @ 250µA	97 nC @ 10 V	±20V	1300 pF @ 25 V	-	140W (Tc)	-55°C ~ 150°C (TJ)	Through Hole	TO-220AB	TO-220-3
IRFP150NPBF MOSFET N-CH 100V 42A TO247AC Infineon Technologies	3,895 In Stock	1 : ¥20.11000 Tube	HEXFET®	Tube	Active	N-Channel	MOSFET (Metal Oxide)	100 V	42A (Tc)	10V	36mOhm @ 23A, 10V	4V @ 250µA	110 nC @ 10 V	±20V	1900 pF @ 25 V	-	160W (Tc)	-55°C ~ 175°C (TJ)	Through Hole	TO-247AC	TO-247-3
SIR410DP-T1-GE3 MOSFET N-CH 20V 35A PPAK SO-8 Vishay Siliconix	4,636 In Stock	1 : ¥8.46000 Cut Tape (CT) 3,000 : ¥3.50851 Tape & Reel (TR)	TrenchFET®	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	20 V	35A (Tc)	4.5V, 10V	4.8mOhm @ 20A, 10V	2.5V @ 250µA	41 nC @ 10 V	±20V	1600 pF @ 10 V	-	4.2W (Ta), 36W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK® SO-8	PowerPAK® SO-8

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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.