Single FETs, MOSFETs

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Grade	Qualification	Mounting Type	Supplier Device Package	Package / Case

XPQR3004PB,LXHQ 40V U-MOS IX-H L-TOGL 0.3MOHM Toshiba Semiconductor and Storage	4,343 In Stock	1 : ¥52.05000 Cut Tape (CT) 1,500 : ¥26.89339 Tape & Reel (TR)	U-MOSIX-H	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	N-Channel	MOSFET (Metal Oxide)	40 V	400A (Ta)	6V, 10V	0.3mOhm @ 200A, 10V	3V @ 1mA	295 nC @ 10 V	±20V	26910 pF @ 10 V	-	750W (Tc)	175°C	Automotive	AEC-Q101	Surface Mount	L-TOGL™	8-PowerBSFN
SIHG186N60EF-GE3 MOSFET N-CH 600V 8.4A TO247AC Vishay Siliconix	309 In Stock	1 : ¥19.37000 Tube	EF	Tube	Active	N-Channel	MOSFET (Metal Oxide)	600 V	8.4A (Tc)	10V	193mOhm @ 9.5A, 10V	5V @ 250µA	32 nC @ 10 V	±30V	1081 pF @ 100 V	-	156W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-247AC	TO-247-3

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Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.