Single Bipolar Transistors

Results: 2
Manufacturer
Nexperia USA Inc.Toshiba Semiconductor and Storage
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
Transistor Type
NPNPNP
Current - Collector (Ic) (Max)
500 mA1 A
Voltage - Collector Emitter Breakdown (Max)
600 V800 V
Vce Saturation (Max) @ Ib, Ic
250mV @ 5mA, 50mA1V @ 50mA, 500mA
Current - Collector Cutoff (Max)
100nA100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce
70 @ 50mA, 10V100 @ 100mA, 5V
Power - Max
650 mW1 W
Frequency - Transition
38MHz-
Package / Case
TO-252-3, DPAK (2 Leads + Tab), SC-63TO-261-4, TO-261AA
Supplier Device Package
PW-MOLDSOT-223
Stocking Options
Environmental Options
Media
Marketplace Product
2Results

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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
Transistor Type
Current - Collector (Ic) (Max)
Voltage - Collector Emitter Breakdown (Max)
Vce Saturation (Max) @ Ib, Ic
Current - Collector Cutoff (Max)
DC Current Gain (hFE) (Min) @ Ic, Vce
Power - Max
Frequency - Transition
Operating Temperature
Grade
Qualification
Mounting Type
Package / Case
Supplier Device Package
SOT223
PBHV9560ZX
TRANS PNP 600V 0.5A SOT223
Nexperia USA Inc.
7,835
In Stock
1 : ¥4.84000
Cut Tape (CT)
1,000 : ¥1.81693
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
PNP
500 mA
600 V
250mV @ 5mA, 50mA
100nA
70 @ 50mA, 10V
650 mW
38MHz
150°C (TJ)
Automotive
AEC-Q100
Surface Mount
TO-261-4, TO-261AA
SOT-223
TO-252-3
TTC014,L1NV
PB-F POWER TRANSISTOR NEW PW-MOL
Toshiba Semiconductor and Storage
5,688
In Stock
1 : ¥7.55000
Cut Tape (CT)
2,000 : ¥3.14094
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
NPN
1 A
800 V
1V @ 50mA, 500mA
100nA (ICBO)
100 @ 100mA, 5V
1 W
-
150°C (TJ)
-
-
Surface Mount
TO-252-3, DPAK (2 Leads + Tab), SC-63
PW-MOLD
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of 2

Single Bipolar Transistors


Discrete Bipolar Junction Transistors (BJTs) are commonly used to construct analog signal amplification functions in audio, radio, and other applications. One of the first semiconductor devices to be mass produced, their characteristics are less favorable than those of other device types for applications involving high frequency switching and operation with high currents or voltages, but they remain a technology of choice for applications requiring analog signal reproduction with minimal added noise and distortion.