Single Bipolar Transistors

Results: 4
Manufacturer
Central Semiconductor CorponsemiSanken Electric USA Inc.
Packaging
BulkCut Tape (CT)Tape & Box (TB)Tray
Transistor Type
NPNNPN - DarlingtonPNPPNP - Darlington
Current - Collector (Ic) (Max)
150 mA1 A10 A
Voltage - Collector Emitter Breakdown (Max)
50 V80 V150 V
Vce Saturation (Max) @ Ib, Ic
250mV @ 10mA, 100mA500mV @ 50mA, 500mA2.5V @ 7mA, 7A
Current - Collector Cutoff (Max)
100nA (ICBO)100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce
40 @ 150mA, 2V70 @ 2mA, 6V5000 @ 7A, 4V
Power - Max
400 mW1 W100 W
Frequency - Transition
50MHz55MHz80MHz100MHz
Operating Temperature
150°C (TJ)-
Mounting Type
-Through Hole
Package / Case
-TO-226-3, TO-92-3 (TO-226AA) Formed LeadsTO-3P-3, SC-65-3
Supplier Device Package
-TO-3PTO-92-3
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
Transistor Type
Current - Collector (Ic) (Max)
Voltage - Collector Emitter Breakdown (Max)
Vce Saturation (Max) @ Ib, Ic
Current - Collector Cutoff (Max)
DC Current Gain (hFE) (Min) @ Ic, Vce
Power - Max
Frequency - Transition
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
TO-92-3 Formed Leads
BC640TA
TRANS PNP 80V 1A TO92-3
onsemi
3,812
In Stock
1 : ¥3.37000
Cut Tape (CT)
2,000 : ¥0.91097
Tape & Box (TB)
-
Cut Tape (CT)
Tape & Box (TB)
Active
PNP
1 A
80 V
500mV @ 50mA, 500mA
100nA (ICBO)
40 @ 150mA, 2V
1 W
100MHz
150°C (TJ)
Through Hole
TO-226-3, TO-92-3 (TO-226AA) Formed Leads
TO-92-3
4,257
In Stock
1 : ¥7.64000
Bulk
-
Bulk
Active
NPN
150 mA
50 V
250mV @ 10mA, 100mA
100nA (ICBO)
70 @ 2mA, 6V
400 mW
80MHz
-
-
-
-
2SC5287
2SD2390
TRANS NPN DARL 150V 10A TO3P
Sanken Electric USA Inc.
1,668
In Stock
1 : ¥25.04000
Tray
-
Tray
Active
NPN - Darlington
10 A
150 V
2.5V @ 7mA, 7A
100µA (ICBO)
5000 @ 7A, 4V
100 W
55MHz
150°C (TJ)
Through Hole
TO-3P-3, SC-65-3
TO-3P
2SB1560
2SB1560
TRANS PNP DARL 150V 10A TO3P
Sanken Electric USA Inc.
313
In Stock
1 : ¥28.57000
Bulk
-
Bulk
Active
PNP - Darlington
10 A
150 V
2.5V @ 7mA, 7A
100µA (ICBO)
5000 @ 7A, 4V
100 W
50MHz
150°C (TJ)
Through Hole
TO-3P-3, SC-65-3
TO-3P
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of 4

Single Bipolar Transistors


Discrete Bipolar Junction Transistors (BJTs) are commonly used to construct analog signal amplification functions in audio, radio, and other applications. One of the first semiconductor devices to be mass produced, their characteristics are less favorable than those of other device types for applications involving high frequency switching and operation with high currents or voltages, but they remain a technology of choice for applications requiring analog signal reproduction with minimal added noise and distortion.