Single Bipolar Transistors

Results: 3
Manufacturer
Central Semiconductor Corponsemi
Packaging
BulkCut Tape (CT)Digi-Reel®Tape & Reel (TR)
Transistor Type
NPNPNP
Current - Collector (Ic) (Max)
100 mA200 mA
Voltage - Collector Emitter Breakdown (Max)
40 V45 V
Vce Saturation (Max) @ Ib, Ic
400mV @ 5mA, 50mA600mV @ 5mA, 100mA-
Current - Collector Cutoff (Max)
15nA (ICBO)50nA (ICBO)-
DC Current Gain (hFE) (Min) @ Ic, Vce
100 @ 10mA, 1V200 @ 2mA, 5V
Power - Max
300 mW625 mW
Frequency - Transition
100MHz250MHz300MHz
Operating Temperature
-65°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)
Mounting Type
Surface MountThrough Hole
Package / Case
TO-226-3, TO-92-3 (TO-226AA) Formed LeadsTO-226-3, TO-92-3 (TO-226AA)TO-236-3, SC-59, SOT-23-3
Supplier Device Package
SOT-23-3 (TO-236)TO-92-3
Stocking Options
Environmental Options
Media
Marketplace Product
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
Transistor Type
Current - Collector (Ic) (Max)
Voltage - Collector Emitter Breakdown (Max)
Vce Saturation (Max) @ Ib, Ic
Current - Collector Cutoff (Max)
DC Current Gain (hFE) (Min) @ Ic, Vce
Power - Max
Frequency - Transition
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
SOT 23-3
BC847BLT1G
TRANS NPN 45V 0.1A SOT23-3
onsemi
131,441
In Stock
1 : ¥0.99000
Cut Tape (CT)
3,000 : ¥0.16690
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
NPN
100 mA
45 V
600mV @ 5mA, 100mA
15nA (ICBO)
200 @ 2mA, 5V
300 mW
100MHz
-55°C ~ 150°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
SOT-23-3 (TO-236)
TO-92-3 Formed Leads
2N3906TF
TRANS PNP 40V 0.2A TO92-3
onsemi
64,543
In Stock
1 : ¥2.63000
Cut Tape (CT)
2,000 : ¥0.44162
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Active
PNP
200 mA
40 V
400mV @ 5mA, 50mA
-
100 @ 10mA, 1V
625 mW
250MHz
-55°C ~ 150°C (TJ)
Through Hole
TO-226-3, TO-92-3 (TO-226AA) Formed Leads
TO-92-3
15,593
In Stock
1 : ¥3.45000
Bulk
-
Bulk
Active
NPN
-
40 V
-
50nA (ICBO)
100 @ 10mA, 1V
-
300MHz
-65°C ~ 150°C (TJ)
Through Hole
TO-226-3, TO-92-3 (TO-226AA)
TO-92-3
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of 3

Single Bipolar Transistors

Discrete Bipolar Junction Transistors (BJTs) are commonly used to construct analog signal amplification functions in audio, radio, and other applications. One of the first semiconductor devices to be mass produced, their characteristics are less favorable than those of other device types for applications involving high frequency switching and operation with high currents or voltages, but they remain a technology of choice for applications requiring analog signal reproduction with minimal added noise and distortion.