Single Bipolar Transistors

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	Transistor Type	Current - Collector (Ic) (Max)	Voltage - Collector Emitter Breakdown (Max)	Vce Saturation (Max) @ Ib, Ic	Current - Collector Cutoff (Max)	DC Current Gain (hFE) (Min) @ Ic, Vce	Power - Max	Frequency - Transition	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package

MJD200G TRANS NPN 25V 5A DPAK onsemi	1,831 In Stock	1 : ¥4.93000 Tube	-	Tube	Active	NPN	5 A	25 V	1.8V @ 1A, 5A	100nA (ICBO)	45 @ 2A, 1V	1.4 W	65MHz	-65°C ~ 150°C (TJ)	Surface Mount	TO-252-3, DPAK (2 Leads + Tab), SC-63	DPAK
MJD44H11G TRANS NPN 80V 8A DPAK onsemi	4,917 In Stock	1 : ¥9.36000 Tube	-	Tube	Active	NPN	8 A	80 V	1V @ 400mA, 8A	1µA	40 @ 4A, 1V	1.75 W	85MHz	-55°C ~ 150°C (TJ)	Surface Mount	TO-252-3, DPAK (2 Leads + Tab), SC-63	DPAK

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Single Bipolar Transistors

Discrete Bipolar Junction Transistors (BJTs) are commonly used to construct analog signal amplification functions in audio, radio, and other applications. One of the first semiconductor devices to be mass produced, their characteristics are less favorable than those of other device types for applications involving high frequency switching and operation with high currents or voltages, but they remain a technology of choice for applications requiring analog signal reproduction with minimal added noise and distortion.