Gate Drivers

Results: 2
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
Driven Configuration
Half-BridgeLow-Side
Channel Type
IndependentSynchronous
Gate Type
IGBT, N-Channel MOSFETN-Channel MOSFET
Voltage - Supply
4.5V ~ 18V8V ~ 14V
Logic Voltage - VIL, VIH
0.8V, 2.2V1V, 2.3V
Current - Peak Output (Source, Sink)
1.2A, 1.8A5A, 5A
Input Type
Inverting, Non-InvertingNon-Inverting
Rise / Fall Time (Typ)
7ns, 6ns15ns, 10ns
Operating Temperature
-40°C ~ 125°C (TJ)-40°C ~ 140°C (TJ)
Package / Case
8-SOIC (0.154", 3.90mm Width)10-TFSOP, 10-MSOP (0.118", 3.00mm Width)
Supplier Device Package
8-SOIC10-VSSOP
Stocking Options
Environmental Options
Media
Marketplace Product
2Results
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
DigiKey Programmable
Driven Configuration
Channel Type
Number of Drivers
Gate Type
Voltage - Supply
Logic Voltage - VIL, VIH
Current - Peak Output (Source, Sink)
Input Type
High Side Voltage - Max (Bootstrap)
Rise / Fall Time (Typ)
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
8-SOIC
UCC27525DR
IC GATE DRVR LOW-SIDE 8SOIC
Texas Instruments
4,049
In Stock
1 : ¥14.04000
Cut Tape (CT)
2,500 : ¥4.41105
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
Not Verified
Low-Side
Independent
2
IGBT, N-Channel MOSFET
4.5V ~ 18V
1V, 2.3V
5A, 5A
Inverting, Non-Inverting
-
7ns, 6ns
-40°C ~ 140°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC
10-VSSOP
LM5106MM/NOPB
IC GATE DRVR HALF-BRIDGE 10VSSOP
Texas Instruments
7,197
In Stock
1 : ¥15.60000
Cut Tape (CT)
1,000 : ¥9.31761
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
Not Verified
Half-Bridge
Synchronous
2
N-Channel MOSFET
8V ~ 14V
0.8V, 2.2V
1.2A, 1.8A
Non-Inverting
118 V
15ns, 10ns
-40°C ~ 125°C (TJ)
Surface Mount
10-TFSOP, 10-MSOP (0.118", 3.00mm Width)
10-VSSOP
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Gate Drivers

Gate driver Power Management Integrated Circuits (PMICs) are devices that provide isolation, amplification, reference shifting, bootstrapping, or other functions necessary to interface signals from a control device in a power conversion application to the semiconductor devices (usually FETs or IGBTs) through which the power being controlled passes. The exact functions offered by any particular device vary, but correlate with the semiconductor configuration it is adapted to drive.