FET, MOSFET Arrays

Results: 2
Manufacturer
Infineon TechnologiesVishay Siliconix
Series
OptiMOS™TrenchFET®
Packaging
Cut Tape (CT)Digi-Reel®Tape & Reel (TR)
Configuration
2 N-Channel (Dual)2 P-Channel (Dual)
FET Feature
-Logic Level Gate
Drain to Source Voltage (Vdss)
30V60V
Current - Continuous Drain (Id) @ 25°C
300mA2.5A (Tc)
Rds On (Max) @ Id, Vgs
155mOhm @ 400mA, 10V3Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id
1.5V @ 250µA2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
0.6nC @ 10V11.1nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds
20pF @ 25V-
Power - Max
500mW1.67W
Operating Temperature
-55°C ~ 150°C (TJ)-55°C ~ 175°C (TJ)
Package / Case
6-VSSOP, SC-88, SOT-363SOT-23-6 Thin, TSOT-23-6
Supplier Device Package
6-TSOPPG-SOT363-PO
Stocking Options
Environmental Options
Media
Marketplace Product
2Results

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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
Technology
Configuration
FET Feature
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Power - Max
Operating Temperature
Grade
Qualification
Mounting Type
Package / Case
Supplier Device Package
448; PPG-SOT363-PO; ; 6
2N7002DWH6327XTSA1
MOSFET 2N-CH 60V 0.3A SOT363
Infineon Technologies
103,322
In Stock
1 : ¥3.37000
Cut Tape (CT)
3,000 : ¥0.60645
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
MOSFET (Metal Oxide)
2 N-Channel (Dual)
Logic Level Gate
60V
300mA
3Ohm @ 500mA, 10V
2.5V @ 250µA
0.6nC @ 10V
20pF @ 25V
500mW
-55°C ~ 150°C (TJ)
-
-
Surface Mount
6-VSSOP, SC-88, SOT-363
PG-SOT363-PO
TSOT-23-6, TSOT-6
SQ3989EV-T1_GE3
MOSFET 2P-CH 30V 2.5A 6TSOP
Vishay Siliconix
5,840
In Stock
1 : ¥4.68000
Cut Tape (CT)
3,000 : ¥1.58744
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Active
MOSFET (Metal Oxide)
2 P-Channel (Dual)
-
30V
2.5A (Tc)
155mOhm @ 400mA, 10V
1.5V @ 250µA
11.1nC @ 10V
-
1.67W
-55°C ~ 175°C (TJ)
Automotive
AEC-Q101
Surface Mount
SOT-23-6 Thin, TSOT-23-6
6-TSOP
Showing
of 2

FET, MOSFET Arrays


Field-effect transistors (FET) are electronic devices which use an electric field to control the flow of current. Application of a voltage to the gate terminal alters the conductivity between the drain and source terminals. FETs are also known as unipolar transistors since they involve single-carrier-type operation. That is, FETs use electrons or holes as charge carriers in their operation, but not both. Field effect transistors generally display very high input impedance at low frequencies.