FET, MOSFET Arrays

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	Technology	Configuration	FET Feature	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Power - Max	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package

NTJD4001NT1G MOSFET 2N-CH 30V 0.25A SC88 onsemi	97,769 In Stock	1 : ¥2.96000 Cut Tape (CT) 3,000 : ¥0.79155 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	MOSFET (Metal Oxide)	2 N-Channel (Dual)	-	30V	250mA	1.5Ohm @ 10mA, 4V	1.5V @ 100µA	1.3nC @ 5V	33pF @ 5V	272mW	-55°C ~ 150°C (TJ)	Surface Mount	6-TSSOP, SC-88, SOT-363	SC-88/SC70-6/SOT-363
QS8M51TR MOSFET N/P-CH 100V 2A/1.5A TSMT8 Rohm Semiconductor	34,094 In Stock This product has a maximum purchase limit	1 : ¥7.96000 Cut Tape (CT) 3,000 : ¥4.24834 Tape & Reel (TR)	-	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	MOSFET (Metal Oxide)	N and P-Channel	Logic Level Gate	100V	2A, 1.5A	325mOhm @ 2A, 10V	2.5V @ 1mA	4.7nC @ 5V	290pF @ 25V, 950pF @ 25V	1.5W	150°C (TJ)	Surface Mount	8-SMD, Flat Leads	TSMT8

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FET, MOSFET Arrays

Field-effect transistors (FET) are electronic devices which use an electric field to control the flow of current. Application of a voltage to the gate terminal alters the conductivity between the drain and source terminals. FETs are also known as unipolar transistors since they involve single-carrier-type operation. That is, FETs use electrons or holes as charge carriers in their operation, but not both. Field effect transistors generally display very high input impedance at low frequencies.