FET, MOSFET Arrays

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	Technology	Configuration	FET Feature	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Power - Max	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package

SI7223DN-T1-GE3 MOSFET 2P-CH 30V 6A PPAK 1212 Vishay Siliconix	8,149 In Stock	1 : ¥7.39000 Cut Tape (CT) 3,000 : ¥3.05582 Tape & Reel (TR)	TrenchFET® Gen III	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	MOSFET (Metal Oxide)	2 P-Channel (Dual)	-	30V	6A (Tc)	26.4mOhm @ 8A, 10V	2.5V @ 250µA	40nC @ 10V	1425pF @ 15V	2.6W (Ta), 23W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK® 1212-8 Dual	PowerPAK® 1212-8 Dual
SISF00DN-T1-GE3 MOSFET 2N-CH 30V 60A PPAK 12 Vishay Siliconix	20,188 In Stock	1 : ¥11.66000 Cut Tape (CT) 3,000 : ¥4.81347 Tape & Reel (TR)	TrenchFET® Gen IV	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	MOSFET (Metal Oxide)	2 N-Channel (Dual) Common Drain	-	30V	60A (Tc)	5mOhm @ 10A, 10V	2.1V @ 250µA	53nC @ 10V	2700pF @ 15V	69.4W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK® 1212-8SCD Dual	PowerPAK® 1212-8SCD Dual
SIZ254DT-T1-GE3 MOSFET 2N-CH 70V 11.7A 8PWRPAIR Vishay Siliconix	605 In Stock	1 : ¥9.52000 Cut Tape (CT) 3,000 : ¥3.93860 Tape & Reel (TR)	TrenchFET® Gen IV	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	MOSFET (Metal Oxide)	2 N-Channel (Dual)	-	70V	11.7A (Ta), 32.5A (Tc)	16.1mOhm @ 10A, 10V	2.4V @ 250µA	20nC @ 10V	795pF @ 35V, 765pF @ 35V	4.3W (Ta), 33W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerWDFN	8-PowerPair® (3.3x3.3)

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FET, MOSFET Arrays

Field-effect transistors (FET) are electronic devices which use an electric field to control the flow of current. Application of a voltage to the gate terminal alters the conductivity between the drain and source terminals. FETs are also known as unipolar transistors since they involve single-carrier-type operation. That is, FETs use electrons or holes as charge carriers in their operation, but not both. Field effect transistors generally display very high input impedance at low frequencies.