FET, MOSFET Arrays

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Mfr Part #	Quantity Available	Price	Series	Package	Product Status	Technology	Configuration	FET Feature	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Power - Max	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package

FDS9926A MOSFET 2N-CH 20V 6.5A 8SOIC onsemi	35,578 In Stock	1 : ¥5.66000 Cut Tape (CT) 2,500 : ¥2.15985 Tape & Reel (TR)	PowerTrench®	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	MOSFET (Metal Oxide)	2 N-Channel (Dual)	Logic Level Gate	20V	6.5A	30mOhm @ 6.5A, 4.5V	1.5V @ 250µA	9nC @ 4.5V	650pF @ 10V	900mW	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
SI7232DN-T1-GE3 MOSFET 2N-CH 20V 25A PPAK 1212 Vishay Siliconix	11,703 In Stock	1 : ¥7.14000 Cut Tape (CT) 3,000 : ¥2.71751 Tape & Reel (TR)	TrenchFET®	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Active	MOSFET (Metal Oxide)	2 N-Channel (Dual)	Logic Level Gate	20V	25A	16.4mOhm @ 10A, 4.5V	1V @ 250µA	32nC @ 8V	1220pF @ 10V	23W	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK® 1212-8 Dual	PowerPAK® 1212-8 Dual

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FET, MOSFET Arrays

Field-effect transistors (FET) are electronic devices which use an electric field to control the flow of current. Application of a voltage to the gate terminal alters the conductivity between the drain and source terminals. FETs are also known as unipolar transistors since they involve single-carrier-type operation. That is, FETs use electrons or holes as charge carriers in their operation, but not both. Field effect transistors generally display very high input impedance at low frequencies.