IRF630NL

DigiKey Part Number
IRF630NL-ND
Manufacturer
Infineon Technologies
Manufacturer Product Number
IRF630NL
Description
MOSFET N-CH 200V 9.3A TO262
Customer Reference
Detailed Description
N-Channel 200 V 9.3A (Tc) 82W (Tc) Through Hole TO-262
Datasheet
 Datasheet
Product Attributes
Type
Description
Select All
Category
Mfr
Infineon Technologies
Series
HEXFET®
Packaging
Tube
Part Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
200 V
Current - Continuous Drain (Id) @ 25°C
9.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
300mOhm @ 5.4A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
35 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
575 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
82W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-262
Package / Case
TO-262-3 Long Leads, I2PAK, TO-262AA