Name: IPP60R199CPXKSA1
Brand: Infineon Technologies
SKU: 448-IPP60R199CPXKSA1-ND
Price: 43.25 CNY
Availability: InStock

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IPP60R199CPXKSA1
DigiKey Part Number	448-IPP60R199CPXKSA1-ND
Manufacturer	Infineon Technologies
Manufacturer Product Number	IPP60R199CPXKSA1
Description	MOSFET N-CH 650V 16A TO220-3
Customer Reference
Detailed Description	N-Channel 650 V 16A (Tc) 139W (Tc) Through Hole PG-TO220-3
Datasheet	Datasheet
EDA/CAD Models	IPP60R199CPXKSA1 Models

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Category Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs	Vgs(th) (Max) @ Id 3.5V @ 660µA
Mfr Infineon Technologies	Gate Charge (Qg) (Max) @ Vgs 43 nC @ 10 V
Series CoolMOS™	Vgs (Max) ±20V
Packaging Tube	Input Capacitance (Ciss) (Max) @ Vds 1520 pF @ 100 V
Part Status Not For New Designs	Power Dissipation (Max) 139W (Tc)
FET Type N-Channel	Operating Temperature -55°C ~ 150°C (TJ)
Technology MOSFET (Metal Oxide)	Mounting Type Through Hole
Drain to Source Voltage (Vdss) 650 V	Supplier Device Package PG-TO220-3
Current - Continuous Drain (Id) @ 25°C 16A (Tc)	Package / Case TO-220-3
Drive Voltage (Max Rds On, Min Rds On) 10V	Base Product Number IPP60R199
Rds On (Max) @ Id, Vgs 199mOhm @ 9.9A, 10V

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Substitutes (10)

Part Number	Manufacturer	Quantity Available	DigiKey Part Number	Unit Price	Substitute Type
FCP190N60E	onsemi	1,432	FCP190N60EOS-ND	¥42.01000	Similar
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IPP60R199CPXKSA1