Name: IPB081N06L3GATMA1
Brand: Infineon Technologies
SKU: IPB081N06L3GATMA1TR-ND
Price: 20.76 CNY
Availability: InStock

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IPB081N06L3GATMA1
DigiKey Part Number	IPB081N06L3GATMA1TR-ND - Tape & Reel (TR) IPB081N06L3GATMA1CT-ND - Cut Tape (CT) IPB081N06L3GATMA1DKR-ND - Digi-Reel®
Manufacturer	Infineon Technologies
Manufacturer Product Number	IPB081N06L3GATMA1
Description	MOSFET N-CH 60V 50A D2PAK
Manufacturer Standard Lead Time	17 Weeks
Customer Reference
Detailed Description	N-Channel 60 V 50A (Tc) 79W (Tc) Surface Mount PG-TO263-3
Datasheet	Datasheet
EDA/CAD Models	IPB081N06L3GATMA1 Models

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Category Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs	Vgs(th) (Max) @ Id 2.2V @ 34µA
Mfr Infineon Technologies	Gate Charge (Qg) (Max) @ Vgs 29 nC @ 4.5 V
Series OptiMOS™	Vgs (Max) ±20V
Packaging Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Input Capacitance (Ciss) (Max) @ Vds 4900 pF @ 30 V
Part Status Active	Power Dissipation (Max) 79W (Tc)
FET Type N-Channel	Operating Temperature -55°C ~ 175°C (TJ)
Technology MOSFET (Metal Oxide)	Mounting Type Surface Mount
Drain to Source Voltage (Vdss) 60 V	Supplier Device Package PG-TO263-3
Current - Continuous Drain (Id) @ 25°C 50A (Tc)	Package / Case TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V	Base Product Number IPB081
Rds On (Max) @ Id, Vgs 8.1mOhm @ 50A, 10V

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