IFX007T Datasheet by Infineon Technologies

W
Data Sheet 1 Rev. 1.0
www.infineon.com 2018-09-11
High Current PN Half Bridge with
Integrated Driver
IFX007T
Industrial & Multi Purpose NovalithIC™
1 Overview
Quality Requirement Category: Industrial
Features
• Path resistance of max. 12.8 mΩ @ 25°C (typ. 10.0 mΩ @ 25°C)
High side: max. 6.5 mΩ @ 25°C (typ. 5.3 mΩ @ 25°C)
Low side: max. 6.3 mΩ @ 25°C (typ. 4.7 mΩ @ 25°C)
• Enhanced switching speed for reduced switching losses
• Capable for high PWM frequency combined with active freewheeling
• Switched mode current limitation for reduced power dissipation in overcurrent
• Current limitation level of 55 A min.
• Status flag diagnosis with current sense capability
• Overtemperature shutdown with latch behavior
• Undervoltage shutdown
• Driver circuit with logic level inputs
• Adjustable slew rates for optimized EMI
• Operation up to 40 V
• Green Product (RoHS compliant)
• JESD47I Qualified
Description
The IFX007T is an integrated high current half bridge for motor drive applications. It is part of the Industrial &
Multi Purpose NovalithIC™ family containing one p-channel high-side MOSFET and one n-channel low-side
MOSFET with an integrated driver IC in one package. Due to the p-channel high-side switch the need for a
charge pump is eliminated thus minimizing EMI. Interfacing to a microcontroller is made easy by the
integrated driver IC which features logic level inputs, diagnosis with current sense, slew rate adjustment, dead
time generation and protection against overtemperature, undervoltage, overcurrent and short circuit.
The IFX007T provides a cost optimized solution for protected high current PWM motor drives with very low
board space consumption.
@neon
Data Sheet 2 Rev. 1.0
2018-09-11
High Current PN Half Bridge with Integrated Driver
IFX007T
Overview
Type Package Marking
IFX007T PG-TO263-7-1 IFX007T
@neon
Data Sheet 3 Rev. 1.0
2018-09-11
High Current PN Half Bridge with Integrated Driver
IFX007T
1 Overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
2 Block diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Block diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.2 Terms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
3 Pin configuration . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
3.1 Pin assignment . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
3.2 Pin definitions and functions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
4 General product characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
4.1 Absolute maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
4.2 Functional range . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
4.3 Thermal resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
5 Block description and characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
5.1 Supply characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
5.2 Power stages . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
5.2.1 Power stages - static characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
5.2.2 Switching times . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
5.2.3 Power stages - dynamic characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
5.3 Protection functions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
5.3.1 Undervoltage shutdown . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
5.3.2 Overtemperature protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
5.3.3 Current limitation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
5.3.4 Short circuit protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
5.3.5 Electrical characteristics - protection functions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
5.4 Control and diagnostics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
5.4.1 Input circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
5.4.2 Dead time generation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
5.4.3 Adjustable slew rate . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
5.4.4 Status flag diagnosis with current sense capability . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
5.4.5 Truth table . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
5.4.6 Electrical characteristics - control and diagnostics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
6 Application information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
6.1 Application circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
6.2 Layout considerations . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
6.3 PWM control . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22
7 Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23
8 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24
Table of Contents
@flneon L ‘ T7? T3? v L9H Ly v
Data Sheet 4 Rev. 1.0
2018-09-11
High Current PN Half Bridge with Integrated Driver
IFX007T
Block diagram
2 Block diagram
The IFX007T is part of the Industrial & Multi Purpose NovalithIC™ family containing three separate chips in one
package: One p-channel high-side MOSFET and one n-channel low-side MOSFET together with a driver IC,
forming an integrated high current half-bridge. All three chips are mounted on one common lead frame, using
the chip-on chip and chip-by-chip technology. The power switches utilize vertical MOS technologies to ensure
optimum on state resistance. Due to the p-channel high-side switch the need for a charge pump is eliminated
thus minimizing EMI. Interfacing to a microcontroller is made easy by the integrated driver IC which features
logic level inputs, diagnosis with current sense, slew rate adjustment, dead time generation and protection
against overtemperature, undervoltage, overcurrent and short circuit. The IFX007T can be combined with
other IFX007Ts to form a H-bridge or a3-phase drive configuration.
2.1 Block diagram
Figure 1 Block diagram
2.2 Terms
Following figure shows the terms used in this data sheet.
Figure 2 Terms
IS
SR
INH
IN
GND
OUT
VS
Gate Driver
HS
Slewrate
Adjustment
Digital Logic
Undervolt.
detection
Overtemp .
detection
Current
Limitation
LS
Current
Limitation
HS
Current
Sense
Gate Driver
LS
LS off HS off
I
IN
V
IN
OUT
I
INH
V
INH
V
SR
I
SR
V
IS
I
IS
V
S
I
OUT
, I
L
V
OUT
V
DS(HS)
GND
I
GND,
I
D(LS)
I
VS
, -I
D(HS)
IN
INH
SR
IS
VS
V
DS(LS)
@neon
Data Sheet 5 Rev. 1.0
2018-09-11
High Current PN Half Bridge with Integrated Driver
IFX007T
Pin configuration
3 Pin configuration
3.1 Pin assignment
Figure 3 Pin assignment IFX007T (top view)
3.2 Pin definitions and functions
Bold type: pin needs power wiring
Table 1 Pin definitions and functions
Pin Symbol I/O Function
1GND –Ground
2IN IInput
Defines whether high - or low-side switch is activated
3 INH I Inhibit
When set to low device goes in sleep mode
4,8 OUT O Power output of the bridge
5SR ISlew Rate
The slew rate of the power switches can be adjusted by connecting
a resistor between SR and GND
6 IS O Current Sense and Diagnostics
7 VS – Supply
1235
67
4
8
@neon 1) Not subject to production test, specified by design.
Data Sheet 6 Rev. 1.0
2018-09-11
High Current PN Half Bridge with Integrated Driver
IFX007T
General product characteristics
4 General product characteristics
The device is intended to be used in an industrial or consumer environment. The circumstances, how the
device environment must look like are described in this chapter.
4.1 Absolute maximum ratings
Stresses above the ones listed here may cause permanent damage to the device. Exposure to absolute
maximum rating conditions for extended periods may affect device reliability.
Table 2 Absolute maximum ratings1)
Tj = 25 °C; all voltages with respect to ground, positive current flowing into pin (unless otherwise specified)
1) Not subject to production test, specified by design.
Parameter Symbol Values Unit Note or
Test Condition
Number
Min. Typ. Max.
Voltages
Supply voltage VS-0.3 – 40 V – P_4.1.1
Drain-source voltage high side VDS(HS) -40––VTj ≥ 25°C P_4.1.2
-38––VTj < 25°C
Drain-source voltage low side VDS(LS) ––40VTj ≥ 25°C P_4.1.3
––38VTj < 25°C
Logic input voltage VIN
VINH
-0.3 – 5.3 V – P_4.1.4
Voltage at SR pin VSR -0.3 – 1.0 V – P_4.1.5
Voltage between VS and IS pin VS -VIS -0.3 – 40 V – P_4.1.6
Voltage at IS pin VIS -20 – 40 V – P_4.1.7
Voltage transient between VS and
GND pin2)
2) “Under Voltage Shut Down” shall not be triggered.
dVS-1 – 1 V Transient fall/rise
time: ttrans > 85 ns.
P_4.1.8
Currents
HS/LS continuous drain current ID(HS)
ID(LS)
-50 – 50 A switch active P_4.1.9
HS/LS pulsed drain current3)
3) Maximum reachable current may be smaller depending on current limitation level.
ID(HS)
ID(LS)
-117 – 117 A tpulse = 10 ms
single pulse
P_4.1.10
Temperatures
Junction temperature Tj-40 – 150 °C – P_4.1.11
Storage temperature Tstg -55 – 150 °C – P_4.1.12
ESD susceptibility
ESD resistivity HBM
IN, INH, SR, IS
OUT, GND, VS
VESD -2
-6
–
–
2
6
kV HBM4)
4) ESD susceptibility, HBM according to ANSI/ESDA/JEDEC JS-001 (1.5 kΩ, 100 pF).
P_4.1.13
@neon 1) Not subject to production test, specified by design.
Data Sheet 7 Rev. 1.0
2018-09-11
High Current PN Half Bridge with Integrated Driver
IFX007T
General product characteristics
Note: Integrated protection functions are designed to prevent IC destruction under fault conditions
described in the data sheet. Fault conditions are considered as “outside” normal operating range.
Protection functions are not designed for continuous repetitive operation.
4.2 Functional range
The parameters of the functional range are listed in the following table:
Note: Within the functional or operating range, the IC operates as described in the circuit description. The
electrical characteristics are specified within the conditions given in the Electrical Characteristics
table.
4.3 Thermal resistance
This thermal data was generated in accordance with JEDEC JESD51 standards. For more information, go to
www.jedec.org
Table 3 Functional range
Parameter Symbol Values Unit Note or
Test Condition
Number
Min. Typ. Max.
Supply voltage range for normal
operation
VS(nor) 8–40VTj ≥ 25°C P_4.2.1
8–38VTj < 25°C
Junction temperature Tj-40 – 150 °C – P_4.2.2
Table 4 Thermal resistance
Parameter Symbol Values Unit Note or
Test Condition
Number
Min. Typ. Max.
Thermal resistance
Junction-case, high-side switch
Rthjc(HS) = ΔTj(HS)/ Pv(HS)
RthJC(HS) – 0.55 0.8 K/W 1)
1) Not subject to production test, specified by design.
P_4.3.1
Thermal resistance
Junction-case, low-side switch
Rthjc(LS) = ΔTj(LS)/ Pv(LS)
RthJC(LS) –1.11.6K/W
1) P_4.3.2
Thermal resistance
Junction-ambient
RthJA –19–K/W
1) 2)
2) Specified RthJA value is according to Jedec JESD51-2,-5,-7 at natural convection on FR4 2s2p board; The Product
(Chip+Package) was simulated on a 76.2 x 114.3 x 1.5 mm board with 2 inner copper layers (2 x 70µm Cu, 2 x 35µm Cu).
Where applicable a thermal via array under the exposed pad contacted the first inner copper layer.
P_4.3.3
0/ Infineon 1) Not subject to production test, specified by design.
Data Sheet 8 Rev. 1.0
2018-09-11
High Current PN Half Bridge with Integrated Driver
IFX007T
Block description and characteristics
5 Block description and characteristics
5.1 Supply characteristics
Figure 4 Typical quiescent current vs. junction temperature
Table 5 Supply characteristics
VS = 24 V, Tj = 25 °C, IL = 0 A,
all voltages with respect to ground, positive current flowing into pin (unless otherwise specified)
Parameter Symbol Values Unit Note or
Test Condition
Number
Min. Typ. Max.
General
Supply current IVS(on) –2.32.8mAVINH = 5 V
VIN = 0V or 5V
RSR = 0 Ω
DC-mode
normal operation
(no fault condition)
P_5.1.1
Quiescent current IVS(off) –710µAVINH = 0 V
VIN = 0V or 5V 1)
1) Not subject to production test, specified by design.
P_5.1.2
0
2
4
6
8
10
12
14
16
18
20
22
24
26
-40 -20 0 20 40 60 80 100 120 140 160
I
VS(off)
[µA]
T [°C]
V
S
= 8 V
V
S
= 18 V
V
S
= 24 V
V
S
= 36 V
/ infineon
Data Sheet 9 Rev. 1.0
2018-09-11
High Current PN Half Bridge with Integrated Driver
IFX007T
Block description and characteristics
5.2 Power stages
The power stages of the IFX007T consist of a p-channel vertical DMOS transistor for the high-side switch and
an n-channel vertical DMOS transistor for the low-side switch. All protection and diagnostic functions are
located in a separate top chip. Both switches allow active freewheeling and thus minimizing power dissipation
during PWM control.
The on state resistance RON is dependent on the supply voltage VS as well as on the junction temperature Tj.
The typical on state resistance characteristics are shown in Figure 5 and Figure 6.
Figure 5 Typical ON-state resistance vs. supply voltage
0
1
2
3
4
5
6
7
8
9
10
8 1216202428323640
R
ON(LS)
[mΩ]
V
S
[V]
T
j
= -40°C
T
j
= 25°C
T
j
= 150°C
Low Side Switch
0/ Infineon \\ 1) Due to active freewheeling, diode is conducting only for a few us, depending on R R.
Data Sheet 10 Rev. 1.0
2018-09-11
High Current PN Half Bridge with Integrated Driver
IFX007T
Block description and characteristics
Figure 6 Typical ON-state resistance vs. junction temperature; VS = 13.5 V; ID = 9 A
5.2.1 Power stages - static characteristics
Table 6 Power stages - static characteristics
VS = 24 V, Tj = 25 °C, all voltages with respect to ground, positive current flowing into pin (unless otherwise
specified)
Parameter Symbol Values Unit Note or
Test Condition
Number
Min. Typ. Max.
High-side switch - static characteristics
ON state high-side resistance RON(HS) –5.36.5mΩIOUT = 9 A; VS = 13.5 V P_5.2.1
Leakage current high side IL(LKHS) –– 1 µAVINH = 0 V; VOUT = 0 V P_5.2.2
Reverse diode forward-voltage
high side1)
1) Due to active freewheeling, diode is conducting only for a few µs, depending on RSR.
VDS(HS) –0.80.9VIOUT = -9 A P_5.2.3
Low-side switch - static characteristics
ON-state low-side resistance RON(LS) –4.76.3mΩIOUT = -9 A; VS = 13.5 V P_5.2.4
Leakage current low side IL(LKLS) –– 1 µAVINH = 0 V; VOUT = VSP_5.2.5
Reverse diode forward-voltage
low side
-VDS(LS) –0.80.9VIOUT = 9 A P_5.2.6
0
1
2
3
4
5
6
7
8
9
10
-50 -25 0 25 50 75 100 125 150
R
ON(HS)
[mΩ]
T
j
[°C]
High Side Switch
typ.
typ. 98 %
0
1
2
3
4
5
6
7
8
9
10
-50 -25 0 25 50 75 100 125 150
R
ON(LS)
[mΩ]
T
j
[°C]
Low Side Switch
typ.
typ. 98 %
@neon
Data Sheet 11 Rev. 1.0
2018-09-11
High Current PN Half Bridge with Integrated Driver
IFX007T
Block description and characteristics
5.2.2 Switching times
Figure 7 Definition of switching times high side (Rload to GND)
Figure 8 Definition of switching times low side (Rload to VS)
Due to the timing differences for the rising and the falling edge there will be a slight difference between the
length of the input pulse and the length of the output pulse. It can be calculated using the following formulas:
•ΔtHS = (tdr(HS) + 0.5 tr(HS)) - (tdf(HS) + 0.5 tf(HS))
•ΔtLS = (tdf(LS) + 0.5 tf(LS)) - (tdr(LS) + 0.5 tr(LS)).
IN
V
OUT
t
t
ΔV
OUT
t
dr(HS)
t
r(HS)
t
df(HS)
t
f(HS)
ΔV
OUT
20% 20%
80%80%
IN
V
OUT
t
t
ΔV
OUT
t
df(LS)
t
f(LS)
ΔV
OUT
t
dr(LS)
t
r(LS)
20% 20%
80%
80%
@neon
Data Sheet 12 Rev. 1.0
2018-09-11
High Current PN Half Bridge with Integrated Driver
IFX007T
Block description and characteristics
5.2.3 Power stages - dynamic characteristics
The slew rate resistor at the SR-pin shall not exceed the max. slew rate resistor value of RSR ≤ 51 kΩ.
5.3 Protection functions
The device provides integrated protection functions. These are designed to prevent IC destruction under fault
conditions described in the data sheet. Fault conditions are considered as “outside” normal operating range.
Protection functions are not to be used for continuous or repetitive operation, with the exception of the
current limitation (Chapter 5.3.3). In case of overtemperature the IFX007T will apply the slew rate determined
by the connected slew rate resistor. In current limitation mode the highest slew rate possible will be applied
independent of the connected slew rate resistor. Overtemperature and overcurrent are indicated by a fault
current IIS(LIM) at the IS pin as described in the paragraph “Status flag diagnosis with current sense
capability” on Page 16 and Figure 12.
5.3.1 Undervoltage shutdown
To avoid uncontrolled motion of the driven motor at low voltages the device shuts off (output is tri-state), if
the supply voltage drops below the switch-off voltage VUV(OFF). The IC becomes active again with a hysteresis
VUV(HY) if the supply voltage rises above the switch-on voltage VUV(ON).
Table 7 Power stages - dynamic characteristics
VS = 24 V, Tj = 25 °C, Rload = 4 Ω, single pulse,
all voltages with respect to ground, positive current flowing into pin (unless otherwise specified)
Parameter Symbol Values Unit Note or
Test Condition
Number
Min. Typ. Max.
High-side switch dynamic characteristics
Rise-time of HS tr(HS) 0.05
0.22
0.25
1.3
0.75
4.7
µs RSR = 0 Ω
RSR = 51 kΩ
P_5.2.7
Switch-ON delay time HS tdr(HS) 1.5
2
3.4
15
4.6
31
µs RSR = 0 Ω
RSR = 51 kΩ
P_5.2.8
Fall-time of HS tf(HS) 0.05
0.22
0.25
1.3
0.7
4.5
µs RSR = 0 Ω
RSR = 51 kΩ
P_5.2.9
Switch-OFF delay time HS tdf(HS) 0.8
1.1
2.4
9
4.1
21
µs RSR = 0 Ω
RSR = 51 kΩ
P_5.2.10
Low-side switch dynamic characteristics
Rise-time of LS tr(LS) 0.05
0.22
0.25
1.3
0.7
4.5
µs RSR = 0 Ω
RSR = 51 kΩ
P_5.2.11
Switch-OFF delay time LS tdr(LS) 0.2
1
1.5
7
2.5
16
µs RSR = 0 Ω
RSR = 51 kΩ
P_5.2.12
Fall-time of LS tf(LS) 0.025
0.18
0.25
1.3
0.7
4.5
µs RSR = 0 Ω
RSR = 51 kΩ
P_5.2.13
Switch-ON delay time LS tdf(LS) 1.6
2.0
4.2
16
5.9
36
µs RSR = 0 Ω
RSR = 51 kΩ
P_5.2.14
@neon
Data Sheet 13 Rev. 1.0
2018-09-11
High Current PN Half Bridge with Integrated Driver
IFX007T
Block description and characteristics
5.3.2 Overtemperature protection
The IFX007T is protected against overtemperature by an integrated temperature sensor. Overtemperature
leads to a shutdown of both output stages. This state is latched until the device is reset by a low signal with a
minimum length of treset at the INH pin, provided that its temperature has decreased at least the thermal
hysteresis ΔT in the meantime.
Repetitive use of the overtemperature protection impacts lifetime.
5.3.3 Current limitation
The current in the bridge is measured in both switches. As soon as the current in forward direction in one
switch (high side or low side) is reaching the limit ICLx, this switch is deactivated and the other switch is
activated for tCLS. During that time all changes at the IN pin are ignored. However, the INH pin can still be used
to switch both MOSFETs off. After tCLS the switches return to their initial setting. The error signal at the IS pin
is reset after 2 * tCLS. Unintentional triggering of the current limitation by short current spikes (e.g. inflicted by
EMI coming from the motor) is suppressed by internal filter circuitry. Due to thresholds and reaction delay
times of the filter circuitry the effective current limitation level ICLx depends on the slew rate of the load current
dI/dt as shown in Figure 10.
Figure 9 Timing diagram current limitation (inductive load)
I
L
t
I
CLx
t
CLS
I
CLx0
/ infineon
Data Sheet 14 Rev. 1.0
2018-09-11
High Current PN Half Bridge with Integrated Driver
IFX007T
Block description and characteristics
Figure 10 Typical current limitation detection level vs. current slew rate dIL/dt
Figure 11 Typical current limitation detection levels vs. supply voltage
In combination with a typical inductive load, such as a motor, this results in a switched mode current
limitation. This method of limiting the current has the advantage of greatly reduced power dissipation in the
IFX007T compared to driving the MOSFET in linear mode. Therefore it is possible to use the current limitation
70
71
72
73
74
75
76
77
78
79
80
81
82
83
84
85
0 500 1000 1500 2000
I
CLH
[A]
dI
L
/dt [A/ms]
High Side Switch
T
j
= -40°C
T
j
= 25°C
T
j
= 150°C
I
CLH0
70
71
72
73
74
75
76
77
78
79
80
81
82
83
84
85
0 500 1000 1500 2000
I
CLL
[A]
dI
L
/dt [A/ms]
Low Side Switch
T
j
= -40°C
T
j
= 25°C
T
j
= 150°C
I
CLH0
70
71
72
73
74
75
76
77
78
79
80
81
82
83
84
85
8 1216202428323640
I
CLH
[A]
V
S
[V]
High Side Switch
T
j
= -40°C
T
j
= 25°C
T
j
= 150°C
70
71
72
73
74
75
76
77
78
79
80
81
82
83
84
85
8 1216202428323640
ICLL [A]
V
S
[V]
Low Side Switch
T
j
= -40°C
Tj= 25°C
Tj= 150°C
@neon 1) With decreasing VS < 5.5="" v="" activation="" ofthe="" current="" limitation="" mode="" may="" occur="" before="" undervoitage="" shutdown.="">
Data Sheet 15 Rev. 1.0
2018-09-11
High Current PN Half Bridge with Integrated Driver
IFX007T
Block description and characteristics
for a short time without exceeding the maximum allowed junction temperature (e.g. for limiting the inrush
current during motor start up). However, the regular use of the current limitation is allowed as long as the
specified maximum junction temperature is not exceeded. Exceeding this temperature can reduce the lifetime
of the device.
5.3.4 Short circuit protection
The device provides embedded protection functions against
• output short circuit to ground
• output short circuit to supply voltage
•short circuit of load
The short circuit protection is realized by the previously described current limitation in combination with the
overtemperature shutdown of the device.
5.3.5 Electrical characteristics - protection functions
Table 8 Electrical characteristics - protection functions
VS = 24 V, Tj = 25 °C, all voltages with respect to ground, positive current flowing into pin
(unless otherwise specified)
Parameter Symbol Values Unit Note or
Test Condition
Number
Min. Typ. Max.
Undervoltage shutdown
Switch-ON voltage VUV(ON) ––5.0VVS increasing P_5.3.1
Switch-OFF voltage1)
1) With decreasing Vs < 5.5 V activation of the current limitation mode may occur before undervoltage shutdown.
VUV(OFF) 3.3 – 4.7 V VS decreasing, INH = 1 P_5.3.2
ON/OFF hysteresis VUV(HY) –0.3–V
2)
2) Not subject to production test, specified by design.
P_5.3.3
Current limitation
Current limitation detection
level HS/LS
ICLH0
ICLL0
55 77 98 A VS = 13.5 V P_5.3.4
Current limitation timing
Shut OFF time for HS and LS tCLS 70 115 210 µs 2) P_5.3.5
Thermal shutdown
Thermal shutdown junction
temperature
TjSD 155 175 200 °C – P_5.3.6
Thermal switch-ON junction
temperature
TjSO 150 – 190 °C – P_5.3.7
Thermal hysteresis DT –7–K
2) P_5.3.8
Reset pulse at INH Pin (INH low) treset 4––µs
2) P_5.3.9
0/ Infineon
Data Sheet 16 Rev. 1.0
2018-09-11
High Current PN Half Bridge with Integrated Driver
IFX007T
Block description and characteristics
5.4 Control and diagnostics
5.4.1 Input circuit
The control inputs IN and INH consist of TTL/CMOS compatible schmitt triggers with hysteresis which control
the integrated gate drivers for the MOSFETs. Setting the INH pin to high enables the device. In this condition
one of the two power switches is switched on depending on the status of the IN pin. To deactivate both
switches, the INH pin has to be set to low. No external driver is needed. The IFX007T can be interfaced directly
to a microcontroller, as long as the maximum ratings in Chapter 4.1 are not exceeded.
5.4.2 Dead time generation
In bridge applications it has to be assured that the high-side and low-side MOSFET are not conducting at the
same time, connecting directly the battery voltage to GND. This is assured by a circuit in the driver IC,
generating a so called dead time between switching off one MOSFET and switching on the other. The dead
time generated in the driver IC is automatically adjusted to the selected slew rate.
5.4.3 Adjustable slew rate
In order to optimize electromagnetic emission, the switching speed of the MOSFETs is adjustable by an
external resistor. The slew rate pin SR allows the user to optimize the balance between emission and power
dissipation within his own application by connecting an external resistor RSR to GND.
5.4.4 Status flag diagnosis with current sense capability
The sense pin IS is used as a combined current sense and error flag output.
In normal operation (current sense mode), a current source is connected to the status pin, which delivers a
current proportional to the forward load current flowing through the active high-side switch. The sense
current can be calculated out of the load current by the following equation:
(5.1)
The other way around, the load current can be calculated out of the sense current by following equation:
(5.2)
The differential current sense ratio dkilis is defined by:
(5.3)
If the high side drain current is zero (ISD(HS) = 0A) the offset current IIS = IIS(offset) still will be driven.
The external resistor RIS determines the voltage per IS output current. The voltage can be calculated by
VIS =RIS .IIS.
In case of a fault condition the status output is connected to a current source which is independent of the load
current and provides IIS(lim). The maximum voltage at the IS pin is determined by the choice of the external
resistor and the supply voltage. In case of current limitation the IIS(lim) is activated for 2 * tCLS.
IIS 1
dkILIS
----------------IL
⋅IIS offset()
+=
ILdkILIS IIS IIS offset()
–()⋅=
dkILIS
IL2 IL1
–
IIS IL2
()IIS IL1
()–
--------------------------------------------
=
@neon
Data Sheet 17 Rev. 1.0
2018-09-11
High Current PN Half Bridge with Integrated Driver
IFX007T
Block description and characteristics
Figure 12 Sense current and fault current
Figure 13 Sense current vs. load current
VS
RIS
IIS~ ILoad
ESD-ZD
VIS
Sense
output
logic
IS
IIS(lim)
IIS(offset)
Normal operation:
current sense mode
VS
RIS
IIS~ ILoad
ESD-ZD
VIS
Sense
output
logic
IS
IIS(lim)
IIS(offset)
Fault condition:
error flag mode
IL[A]
IIS(lim)
IIS
[mA]
ICLx
Error Flag Mode
lower dk
ILIS
value
higher dk
ILIS
value
Current Sense Mode
(High Side)
IIS(offset)
@neon 1) Will return to normal operation aftert S; Errorsignal is reset after 2‘: 5 (see Chapter 5.3.3)
Data Sheet 18 Rev. 1.0
2018-09-11
High Current PN Half Bridge with Integrated Driver
IFX007T
Block description and characteristics
5.4.5 Truth table
5.4.6 Electrical characteristics - control and diagnostics
Table 9 Truth table
Device State Inputs Outputs Mode
INH IN HSS LSS IS
Normal operation 0 X OFF OFF 0 Stand-by mode
10OFFONIIS(offset) LSS active
1 1 ON OFF CS HSS active
Undervoltage (UV) X X OFF OFF 0 UV lockout, reset
Overtemperature (OT)
or short circuit of HSS or LSS
0 X OFF OFF 0 Stand-by mode, reset of latch
1 X OFF OFF 1 Shutdown with latch, error detected
Current limitation mode/
overcurrent (OC)
1 1 OFF ON 1 Switched mode, error detected1)
1) Will return to normal operation after tCLS; Error signal is reset after 2*tCLS (see Chapter 5.3.3)
1 0 ON OFF 1 Switched mode, error detected1)
Table 10
Inputs Switches Current sense / status flag IS
0 = Logic LOW OFF = switched off IIS(offset) = Current sense - Offset (for
conditions see table: Current
sense)
1 = Logic HIGH ON = switched on CS = Current sense - high side (for
conditions see table: Current
sense)
X = 0 or 1 1 = Logic HIGH (error)
0 = No output
Table 11 Electrical characteristics - control and diagnostics
VS = 24 V, Tj = 25 °C, all voltages with respect to ground, positive current flowing into pin
(unless otherwise specified)
Parameter Symbol Values Unit Note or
Test Condition
Number
Min. Typ. Max.
Control inputs (IN and INH)
High level voltage
INH, IN
VINH(H)
VIN(H)
– 1.6 2 V – P_5.4.1
Low level voltage
INH, IN
VINH(L)
VIN(L)
1.1 1.3 – V – P_5.4.2
Input voltage hysteresis VINHHY
VINHY
– 300 – mV 1) P_5.4.3
Input current high level IINH(H)
IIN(H)
15 30 100 µA VIN = VINH = 5.3 V P_5.4.4
0/ Infineon 1) Not subject to production test, specified by design.
Data Sheet 19 Rev. 1.0
2018-09-11
High Current PN Half Bridge with Integrated Driver
IFX007T
Block description and characteristics
Figure 14 Typical current sense offset current
Input current low level IINH(L)
IIN(L)
15 25 50 µA VIN = VINH = 0.4 V P_5.4.5
Current sense
Differential current sense ratio
in static on-condition
dkILIS = dIL / dIIS
dkILIS 15 19.5 24 103
VS = 13.5 V
RIS = 1 kΩ
IL1 = 10 A
IL2 = 40 A
P_5.4.6
Maximum analog sense current,
Sense current in fault condition
IIS(lim) 4.1 5 6.1 mA VS = 13.5 V
RIS = 1 kΩ
P_5.4.7
Isense leakage current IISL ––1µAVINH = 0 V P_5.4.8
Isense offset current IIS(offset) 30 170 385 µA VINH = 5 V
ISD(HS) = 0 A
P_5.4.9
1) Not subject to production test, specified by design.
Table 11 Electrical characteristics - control and diagnostics (cont’d)
VS = 24 V, Tj = 25 °C, all voltages with respect to ground, positive current flowing into pin
(unless otherwise specified)
Parameter Symbol Values Unit Note or
Test Condition
Number
Min. Typ. Max.
0.10
0.12
0.14
0.16
0.18
0.20
0.22
0.24
8 1216202428323640
I
IS(offset)
[mA]
V
S
[V]
T
j
= -40°C
T
j
= 25°C
T
j
= 150°C
0.10
0.12
0.14
0.16
0.18
0.20
0.22
0.24
0.26
0.28
0.30
-40-200 20406080100120140
I
IS(offset)
[mA]
T [°C]
infineon §\
Data Sheet 20 Rev. 1.0
2018-09-11
High Current PN Half Bridge with Integrated Driver
IFX007T
Block description and characteristics
Figure 15 Typical characteristic of the maximum analog sense current in fault condition (Pos. 5.4.7.)
3.5
4.0
4.5
5.0
5.5
6.0
8 1216202428323640
I
IS(lim)
[mA]
V
S
[V]
T
j
= -40°C
T
j
= 25°C
T
j
= 150°C
@neon
Data Sheet 21 Rev. 1.0
2018-09-11
High Current PN Half Bridge with Integrated Driver
IFX007T
Application information
6 Application information
Note: The following information is given as a hint for the implementation of the device only and shall not
be regarded as a description or warranty of a certain functionality, condition or quality of the device.
6.1 Application circuit
Figure 16 Application circuit: H-bridge with two IFX007T
Note: This is a simplified example of an application circuit. The function must be verified in the real
application.
6.2 Layout considerations
Due to the fast switching times for high currents, special care has to be taken to the PCB layout. Stray
inductances have to be minimized in the power bridge design as it is necessary in all switched high power
bridges. The IFX007T has no separate pin for power ground and logic ground. Therefore it is recommended to
assure that the offset between the ground connection of the slew rate resistor, the current sense resistor and
ground pin of the device (GND / pin 1) is minimized. If the IFX007T is used in a H-bridge or B6 bridge design, the
voltage offset between the GND pins of the different devices should be small as well.
Due to the fast switching behavior of the device in current limitation mode a low ESR electrolytic capacitor C10
from VS to GND is necessary. This prevents destructive voltage peaks and drops on VS. This is needed for both
PWM and non PWM controlled applications. To assure efficiency of C10 and C19/ C29 the stray inductance must
be low. Therefore the capacitors must be placed very close to the device pins. The value of the capacitors must
be verified in the real application, taking care for low ripple and transients at the Vs pin of the IFX007T.
The digital inputs need to be protected from excess currents (e.g. caused by induced voltage spikes) by series
resistors greater than 7 kΩ.
optional
M
Voltage
Regulator
I/O
Reset
Vdd
Vss
WO
RO
Q
DGND
I
C
19
100nF
C
10
1000 µF
R
11
10kΩ
R
12
10kΩ
R
111
0..51kΩ
R
112
1kΩ
I/OI/O
C
1O2V
220nF
C
1OUT
220nF
C
2O2V
220 nF
C
2OUT
220 nF
C
29
100nF
R
211
0..51kΩ
I/OA/D
R
22
10kΩ
R
21
10kΩ
R
212
1kΩ
A/D
INH
IN
IS
SR
IFX007T
VS
OUT
GND
INH
IN
IS
SR
IFX007T
VS
OUT
GND
V
S
Reverse Polarity
Protection
(IPD90P03P4L-04)
R
3
10kΩ
D
Z1
10 V
C
1
100nF
L
1
C
22
100 nF
C
2IS
1nF
C
1IS
1nF
C
12
100nF
Microcontroller
@neon WT WT
Data Sheet 22 Rev. 1.0
2018-09-11
High Current PN Half Bridge with Integrated Driver
IFX007T
Application information
Figure 17 Application circuit: half-bridge with a IFX007T (load to GND)
Note: This is a simplified example of an application circuit. The function must be verified in the real
application.
6.3 PWM control
For the selection of the max. PWM frequency the choosen rise/fall-time and the requirements on the duty cycle
have to be taken into account. We recommend a PWM-period at least 10 times the rise-time.
Example:
Rise-time = fall-time = 4 µs.
=> T-PWM = 10 * 4 µs = 40 µs.
=> f-PWM = 25 kHz.
The min. and max. value of the duty cycle (PWM ON to OFF percentage) is determined by the real fall time plus
the real rise time. In this example a duty cycle make sense from approximately 20% to 80%.
If a wider duty cycle range is needed, the PWM frequency could be decreased and/or the rise/fall-time could
be accelerated.
M
Micro-
controller
Voltage
Regulator
V
S
I/O
Reset
Vdd
Vss
WO
RO
Q
DGND
I
Reverse Polarity
Protection
(IPD90P03P4L-04)
C
9
100 nF
C
10
1000 µF
R
3
10kΩ
D
Z1
10V
R
1
10kΩ
R
2
10 kΩ
R
11
0..51kΩ
R
12
1kΩ
I/OI/OI/O
C
IS
1nF
C
O2 V
220nF
C
1
100 nF
L
1
C
OUT
220 nF
C
2
100 nF
INH
IN
IS
SR
VS
OUT
GND
IFX007T
@neon « :3} W} E J-IEI
Data Sheet 23 Rev. 1.0
2018-09-11
High Current PN Half Bridge with Integrated Driver
IFX007T
Package Outlines
7 Package Outlines
Figure 18 PG-TO263-7-1 (Plastic Green Transistor Single Outline Package)
Green Product (RoHS compliant)
To meet the world-wide customer requirements for environmentally friendly products and to be compliant
with government regulations the device is available as a green product. Green products are RoHS-Compliant
(i.e Pb-free finish on leads and suitable for Pb-free soldering according to IPC/JEDEC J-STD-020).
A
BA0.25 M
0.1
Typical
±0.2
10
8.5 1)
7.55
1)
(15)
±0.2
9.25
±0.3
1
0...0.15
7 x 0.6 ±0.1
±0.1
GPT09114
1.27
4.4
B
0.5
±0.1
±0.3
2.7
4.7
±0.5
0.05
1)
0.1
Metal surface min. X = 7.25, Y = 6.9
2.4
1.27
All metal surfaces tin plated, except area of cut.
0...0.3
B
6 x
8˚ MAX.
8.42
10.8
9.4
16.15
4.6
0.47
0.8
For further information on alternative packages, please visit our website:
http://www.infineon.com/packages.Dimensions in mm
@neon
Data Sheet 24 Rev. 1.0
2018-09-11
High Current PN Half Bridge with Integrated Driver
IFX007T
Revision History
8 Revision History
Revision Date Changes
Rev. 1.0 Data Sheet Initial release.
IMPORTANT NOTICE
The information given in this document shall in no
event be regarded as a guarantee of conditions or
characteristics ("Beschaffenheitsgarantie").
With respect to any examples, hints or any typical
values stated herein and/or any information regarding
the application of the product, Infineon Technologies
hereby disclaims any and all warranties and liabilities
of any kind, including without limitation warranties of
non-infringement of intellectual property rights of any
third party.
In addition, any information given in this document is
subject to customer's compliance with its obligations
stated in this document and any applicable legal
requirements, norms and standards concerning
customer's products and any use of the product of
Infineon Technologies in customer's applications.
The data contained in this document is exclusively
intended for technically trained staff. It is the
responsibility of customer's technical departments to
evaluate the suitability of the product for the intended
application and the completeness of the product
information given in this document with respect to
such application.
For further information on technology, delivery terms
and conditions and prices, please contact the nearest
Infineon Technologies Office (www.infineon.com).
Please note that this product is not qualified
according to the AEC Q100 or AEC Q101 documents of
the Automotive Electronics Council.
WARNINGS
Due to technical requirements products may contain
dangerous substances. For information on the types
in question please contact your nearest Infineon
Technologies office.
Except as otherwise explicitly approved by Infineon
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Infineon Technologies’ products may not be used in
any applications where a failure of the product or any
consequences of the use thereof can reasonably be
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HEXFET™, HITFET™, HybridPACK™, iMOTION™, IRAM™, ISOFACE™, IsoPACK™, LEDrivIR™, LITIX™, MIPAQ™, ModSTACK™, my-d™, NovalithIC™, OPTIGA™,
OptiMOS™, ORIGA™, PowIRaudio™, PowIRStage™, PrimePACK™, PrimeSTACK™, PROFET™, PRO-SIL™, RASIC™, REAL3™, SmartLEWIS™, SOLID FLASH™,
SPOC™, StrongIRFET™, SupIRBuck™, TEMPFET™, TRENCHSTOP™, TriCore™, UHVIC™, XHP™, XMC™.
Trademarks updated November 2015
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Edition 2018-02-21
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2018 Infineon Technologies AG.
All Rights Reserved.
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