IPA60R180C7 Datasheet by Infineon Technologies

(in/frineon
MOSFET
MetalOxideSemiconductorFieldEffectTransistor
CoolMOS™C7
600VCoolMOS™C7PowerTransistor
IPA60R180C7
DataSheet
Rev.2.0
Final
PowerManagement&Multimarket
(iflreon Table 1 Key Performance Parameters
2
600VCoolMOS™C7PowerTransistor
IPA60R180C7
Rev.2.0,2015-08-10Final Data Sheet
TO-220FP
Drain
Pin 2
Gate
Pin 1
Source
Pin 3
1Description
CoolMOS™C7isarevolutionarytechnologyforhighvoltagepower
MOSFETs,designedaccordingtothesuperjunction(SJ)principleand
pioneeredbyInfineonTechnologies.
600VCoolMOS™C7seriescombinestheexperienceoftheleadingSJ
MOSFETsupplierwithhighclassinnovation.
The600VC7isthefirsttechnologyeverwithRDS(on)*Abelow1Ohm*mm².
Features
•Suitableforhardandsoftswitching(PFCandhighperformanceLLC)
•IncreasedMOSFETdv/dtruggednessto120V/ns
•IncreasedefficiencyduetobestinclassFOMRDS(on)*EossandRDS(on)*Qg
•BestinclassRDS(on)/package
•QualifiedforindustrialgradeapplicationsaccordingtoJEDEC(J-STD20
andJESD22)
Benefits
•IncreasedeconomiesofscalebyuseinPFCandPWMtopologiesinthe
application
•Higherdv/dtlimitenablesfasterswitchingleadingtohigherefficiency
•Enablinghighersystemefficiencybylowerswitchinglosses
•Increasedpowerdensitysolutionsduetosmallerpackages
•Suitableforapplicationssuchasserver,telecomandsolar
•Higherswitchingfrequenciespossiblewithoutlossinefficiencydueto
lowEossandQg
Applications
PFCstagesandPWMstages(TTF,LLC)forhighpower/performance
SMPSe.g.Computing,Server,Telecom,UPSandSolar.
Pleasenote:ForMOSFETparallelingtheuseofferritebeadsonthegate
orseparatetotempolesisgenerallyrecommended.
Table1KeyPerformanceParameters
Parameter Value Unit
VDS @ Tj,max 650 V
RDS(on),max 180 mΩ
Qg.typ 24 nC
ID,pulse 45 A
ID,continuous @ Tj<150°C 22 A
Eoss@400V 2.7 µJ
Body diode di/dt 350 A/µs
Type/OrderingCode Package Marking RelatedLinks
IPA60R180C7 PG-TO 220 FullPAK 60C7180 see Appendix A
(ifileon
3
600VCoolMOS™C7PowerTransistor
IPA60R180C7
Rev.2.0,2015-08-10Final Data Sheet
TableofContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Test Circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Appendix A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
(imeon Maximum rat iiii
4
600VCoolMOS™C7PowerTransistor
IPA60R180C7
Rev.2.0,2015-08-10Final Data Sheet
2Maximumratings
atTj=25°C,unlessotherwisespecified
Table2Maximumratings
Values
Min. Typ. Max.
Parameter Symbol Unit Note/TestCondition
Continuous drain current1) ID-
-
-
-
9
5ATC=25°C
TC=100°C
Pulsed drain current2) ID,pulse - - 45 A TC=25°C
Avalanche energy, single pulse EAS - - 53 mJ ID=3.3A; VDD=50V; see table 10
Avalanche energy, repetitive EAR - - 0.26 mJ ID=3.3A; VDD=50V; see table 10
Avalanche current, single pulse IAS - - 3.3 A -
MOSFET dv/dt ruggedness dv/dt - - 120 V/ns VDS=0...400V
Gate source voltage (static) VGS -20 - 20 V static;
Gate source voltage (dynamic) VGS -30 - 30 V AC (f>1 Hz)
Power dissipation Ptot - - 29 W TC=25°C
Storage temperature Tstg -55 - 150 °C -
Operating junction temperature Tj-55 - 150 °C -
Mounting torque - - - 50 Ncm M2.5 screws
Continuous diode forward current IS- - 9 A TC=25°C
Diode pulse current2) IS,pulse - - 45 A TC=25°C
Reverse diode dv/dt3) dv/dt - - 20 V/ns VDS=0...400V,ISD<=5.2A,Tj=25°C
see table 8
Maximum diode commutation speed dif/dt - - 350 A/µsVDS=0...400V,ISD<=5.2A,Tj=25°C
see table 8
Insulation withstand voltage VISO - - 2500 V Vrms,TC=25°C,t=1min
1) Limited by Tj max.
2) Pulse width tp limited by Tj,max
3) Identical low side and high side switch
(ifileon Table 3 Thermal characteristics
5
600VCoolMOS™C7PowerTransistor
IPA60R180C7
Rev.2.0,2015-08-10Final Data Sheet
3Thermalcharacteristics
Table3Thermalcharacteristics
Values
Min. Typ. Max.
Parameter Symbol Unit Note/TestCondition
Thermal resistance, junction - case RthJC - - 4.28 °C/W -
Thermal resistance, junction - ambient RthJA - - 80 °C/W leaded
Thermal resistance, junction - ambient
for SMD version RthJA - - - °C/W n.a.
Soldering temperature, wavesoldering
only allowed at leads Tsold - - 260 °C 1.6mm (0.063 in.) from case for 10s
infineon Table 4 Static characteristics Table 5 Dynamic characteristics Table 6 Gate char 2 characteristics
6
600VCoolMOS™C7PowerTransistor
IPA60R180C7
Rev.2.0,2015-08-10Final Data Sheet
4Electricalcharacteristics
atTj=25°C,unlessotherwisespecified
Table4Staticcharacteristics
Values
Min. Typ. Max.
Parameter Symbol Unit Note/TestCondition
Drain-source breakdown voltage V(BR)DSS 600 - - V VGS=0V,ID=1mA
Gate threshold voltage V(GS)th 3 3.5 4 V VDS=VGS,ID=0.26mA
Zero gate voltage drain current IDSS -
-
-
10
1
-µAVDS=600,VGS=0V,Tj=25°C
VDS=600,VGS=0V,Tj=150°C
Gate-source leakage current IGSS - - 100 nA VGS=20V,VDS=0V
Drain-source on-state resistance RDS(on) -
-
0.155
0.346
0.180
-ΩVGS=10V,ID=5.3A,Tj=25°C
VGS=10V,ID=5.3A,Tj=150°C
Gate resistance RG- 0.85 - Ωf=1MHz,opendrain
Table5Dynamiccharacteristics
Values
Min. Typ. Max.
Parameter Symbol Unit Note/TestCondition
Input capacitance Ciss - 1080 - pF VGS=0V,VDS=400V,f=250kHz
Output capacitance Coss - 18 - pF VGS=0V,VDS=400V,f=250kHz
Effective output capacitance, energy
related1) Co(er) - 34 - pF VGS=0V,VDS=0...400V
Effective output capacitance, time
related2) Co(tr) - 349 - pF ID=constant,VGS=0V,VDS=0...400V
Turn-on delay time td(on) - 9.3 - ns VDD=400V,VGS=13V,ID=5.3A,
RG=10Ω;seetable9
Rise time tr- 7 - ns VDD=400V,VGS=13V,ID=5.3A,
RG=10Ω;seetable9
Turn-off delay time td(off) - 50 - ns VDD=400V,VGS=13V,ID=5.3A,
RG=10Ω;seetable9
Fall time tf- 6 - ns VDD=400V,VGS=13V,ID=5.3A,
RG=10Ω;seetable9
Table6Gatechargecharacteristics
Values
Min. Typ. Max.
Parameter Symbol Unit Note/TestCondition
Gate to source charge Qgs - 5 - nC VDD=400V,ID=5.3A,VGS=0to10V
Gate to drain charge Qgd - 8 - nC VDD=400V,ID=5.3A,VGS=0to10V
Gate charge total Qg- 24 - nC VDD=400V,ID=5.3A,VGS=0to10V
Gate plateau voltage Vplateau - 5.0 - V VDD=400V,ID=5.3A,VGS=0to10V
1)Co(er)isafixedcapacitancethatgivesthesamestoredenergyasCosswhileVDSisrisingfrom0to400V
2)Co(tr)isafixedcapacitancethatgivesthesamechargingtimeasCosswhileVDSisrisingfrom0to400V
(ifileon Table 7 Reverse diode characteristics
7
600VCoolMOS™C7PowerTransistor
IPA60R180C7
Rev.2.0,2015-08-10Final Data Sheet
Table7Reversediodecharacteristics
Values
Min. Typ. Max.
Parameter Symbol Unit Note/TestCondition
Diode forward voltage VSD - 0.9 - V VGS=0V,IF=5.3A,Tj=25°C
Reverse recovery time trr - 280 - ns VR=400V,IF=5.3A,diF/dt=100A/µs;
see table 8
Reverse recovery charge Qrr - 2.6 - µC VR=400V,IF=5.3A,diF/dt=100A/µs;
see table 8
Peak reverse recovery current Irrm - 21 - A VR=400V,IF=5.3A,diF/dt=100A/µs;
see table 8
(imeon
8
600VCoolMOS™C7PowerTransistor
IPA60R180C7
Rev.2.0,2015-08-10Final Data Sheet
5Electricalcharacteristicsdiagrams
Diagram1:Powerdissipation
TC[°C]
Ptot[W]
0 25 50 75 100 125 150
0
5
10
15
20
25
30
35
Ptot=f(TC)
Diagram2:Safeoperatingarea
VDS[V]
ID[A]
100101102103
10-4
10-3
10-2
10-1
100
101
102
1 µs
10 µs
100 µs
1 ms
10 ms
DC
ID=f(VDS);TC=25°C;D=0;parameter:tp
Diagram3:Safeoperatingarea
VDS[V]
ID[A]
100101102103
10-4
10-3
10-2
10-1
100
101
102
1 µs10 µs
100 µs
1 ms
10 ms
DC
ID=f(VDS);TC=80°C;D=0;parameter:tp
Diagram4:Max.transientthermalimpedance
tp[s]
ZthJC[K/W]
10-5 10-4 10-3 10-2 10-1
10-2
10-1
100
101
0.5
0.2
0.1
0.05
0.02
0.01
single pulse
ZthJC=f(tP);parameter:D=tp/T
(imeon
9
600VCoolMOS™C7PowerTransistor
IPA60R180C7
Rev.2.0,2015-08-10Final Data Sheet
Diagram5:Typ.outputcharacteristics
VDS[V]
ID[A]
0 5 10 15 20
0
10
20
30
40
50
60
70
80
20 V
10 V
8 V
7 V
6 V
5.5 V
5 V
4.5 V
ID=f(VDS);Tj=25°C;parameter:VGS
Diagram6:Typ.outputcharacteristics
VDS[V]
ID[A]
0 5 10 15 20
0
5
10
15
20
25
30
35
40
20 V
10 V
8 V
7 V
6 V
5.5 V
5 V
4.5 V
ID=f(VDS);Tj=125°C;parameter:VGS
Diagram7:Typ.drain-sourceon-stateresistance
ID[A]
RDS(on)[Ω]
0 10 20 30
0.33
0.35
0.37
0.39
0.41
0.43
0.45
0.47
0.49
0.51
0.53
20 V
5.5 V 6 V
6.5 V
7 V
10 V
RDS(on)=f(ID);Tj=125°C;parameter:VGS
Diagram8:Drain-sourceon-stateresistance
Tj[°C]
RDS(on)[Ω]
-50 -25 0 25 50 75 100 125 150
0.08
0.13
0.18
0.23
0.28
0.33
0.38
0.43
98%
typ
RDS(on)=f(Tj);ID=5.3A;VGS=10V
(imeon
10
600VCoolMOS™C7PowerTransistor
IPA60R180C7
Rev.2.0,2015-08-10Final Data Sheet
Diagram9:Typ.transfercharacteristics
VGS[V]
ID[A]
0 2 4 6 8 10 12
0
10
20
30
40
50
60
70
150 °C
25 °C
ID=f(VGS);VDS=20V;parameter:Tj
Diagram10:Typ.gatecharge
Qgate[nC]
VGS[V]
0 5 10 15 20 25 30
0
2
4
6
8
10
12
400 V
120 V
VGS=f(Qgate);ID=5.3Apulsed;parameter:VDD
Diagram11:Forwardcharacteristicsofreversediode
VSD[V]
IF[A]
0.00 0.20 0.40 0.60 0.80 1.00 1.20 1.40 1.60 1.80 2.00
10-1
100
101
102
25 °C
125 °C
IF=f(VSD);parameter:Tj
Diagram12:Avalancheenergy
Tj[°C]
EAS[mJ]
25 50 75 100 125 150
0
10
20
30
40
50
60
EAS=f(Tj);ID=3.3A;VDD=50V
(imeon
11
600VCoolMOS™C7PowerTransistor
IPA60R180C7
Rev.2.0,2015-08-10Final Data Sheet
Diagram13:Drain-sourcebreakdownvoltage
Tj[°C]
VBR(DSS)[V]
-60 -30 0 30 60 90 120 150
520
540
560
580
600
620
640
660
680
700
VBR(DSS)=f(Tj);ID=1mA
Diagram14:Typ.capacitances
VDS[V]
C[pF]
0 100 200 300 400
10-1
100
101
102
103
104
105
Ciss
Coss
Crss
C=f(VDS);VGS=0V;f=250kHz
Diagram15:Typ.Cossstoredenergy
VDS[V]
Eoss[µJ]
0 100 200 300 400
0.0
0.5
1.0
1.5
2.0
2.5
3.0
Eoss=f(VDS)
(ifileon
12
600VCoolMOS™C7PowerTransistor
IPA60R180C7
Rev.2.0,2015-08-10Final Data Sheet
6TestCircuits
Table8Diodecharacteristics
Test circuit for diode characteristics Diode recovery waveform
t
V ,I
Irrm
IF
VDS
10 %Irrm
trr
tFtS
Q
FQ
S
dIF/ dt
dIrr / dt
VDS(peak)
Q
rr = QF+ Q
S
trr =tF+tS
VDS
IF
VDS
IF
Rg1
Rg2
Rg1 = Rg2
Table9Switchingtimes
Switching times test circuit for inductive load Switching times waveform
VDS
VGS
td(on) td(off)
tr
ton
tf
toff
10%
90%
VDS
VGS
Table10Unclampedinductiveload
Unclamped inductive load test circuit Unclamped inductive waveform
VDS
V(BR)DS
ID
VDS
VDS
ID
"160" if
13
600VCoolMOS™C7PowerTransistor
IPA60R180C7
Rev.2.0,2015-08-10Final Data Sheet
7PackageOutlines
A2
H
b
D
c
b2
E
e1
e
L
Q

L1
N
D1
A
DIM
A1
DOCUMENT NO.
Z8B00003319
2.5
REVISION
05
24-10-2014
ISSUE DATE
EUROPEAN PROJECTION
1.130
0.177
MIN
0.095
0.026
0.016
0.617
0.037
0.092
0.394
0.503
0.116
0.124
0.111
0.353
2.862.42
2.54 (BSC)
5.08
28.70
0.95
15.67
0.40
0.65
10.00
2.83
3.15
2.95
12.78
8.97
3
29.75
0.90
0.63
1.51
16.15
3.50
3.38
3.45
13.75
10.65
9.83
MILLIMETERS
MIN
4.50
2.34
MAX
4.90
2.85
0.113
0.100 (BSC)
0.200
3
1.171
0.059
0.636
0.025
0.035
0.419
0.136
0.133
0.138
0.541
0.387
0
INCHES
0.193
MAX
0.112
SCALE
5mm
0
2.5
b1 0.0370.95 1.38 0.054
b4 0.0260.65 1.51 0.059
b3 0.0260.65 1.38 0.054
DIMENSIONS DO NOT INCLUDE MOLD FLASH, PROTRUSIONS OR GATE BURRS.
Figure1OutlinePG-TO220FullPAK,dimensionsinmm/inches
infineon www infineon.com : www.infineon.com www fineon.com
14
600VCoolMOS™C7PowerTransistor
IPA60R180C7
Rev.2.0,2015-08-10Final Data Sheet
8AppendixA
Table11RelatedLinks
•IFXCoolMOSTMC7Webpage:www.infineon.com
•IFXCoolMOSTMC7applicationnote:www.infineon.com
•IFXCoolMOSTMC7simulationmodel:www.infineon.com
•IFXDesigntools:www.infineon.com
(ifileon
15
600VCoolMOS™C7PowerTransistor
IPA60R180C7
Rev.2.0,2015-08-10Final Data Sheet
RevisionHistory
IPA60R180C7
Revision:2015-08-10,Rev.2.0
Previous Revision
Revision Date Subjects (major changes since last revision)
2.0 2015-08-10 Release of final version
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