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Toshiba 650 V and 1,200 V 3rd Generation Silicon Carbide MOSFETs | Datasheet Preview
Toshiba's 650 and 1,200 volt 3rd Generation Silicon Carbide technology is designed for high-efficiency power supply applications. Packaged in the industry standard three-lead TO-247 package, the Silicon Carbide MOSETs are specially designed for high powered industrial applications such as 400 and 800 volts AC for power supplies, photovoltaic inverters, and bi-directional DC-to-DC converters for uninterruptible power supplies. These MOSFETs help to reduce power consumption and improve power density with a higher voltage, faster switching, and lower On-resistance. The 650 V products feature an input capacitance of 4,850 picofarads, a low gate-input charge of 128 nanocoulombs, and a drain-to-source On-resistance of just 15milliohms. The 1200 V products feature an input capacitance of 6000 picofarads, a low gate-input charge of 158 nanocoulombs, and a drain-to-source On-resistance of just 15milliohms.
Part List
| 图片 | 制造商零件编号 | 描述 | 可供货数量 | 价格 | 查看详情 | |
|---|---|---|---|---|---|---|
 |  | TW015N65C,S1F | G3 650V SIC-MOSFET TO-247 15MOH | 64 - 立即发货 | $433.56 | 查看详情 |
| | TW027N65C,S1F | G3 650V SIC-MOSFET TO-247 27MOH | 7 - 立即发货 | $177.47 | 查看详情 |
| | TW107N65C,S1F | G3 650V SIC-MOSFET TO-247 107MO | 80 - 立即发货 | $75.20 | 查看详情 |
 | TW140N120C,S1F | G3 1200V SIC-MOSFET TO-247 140M | 21 - 立即发货 | $88.94 | 查看详情 | |
| | TW060N120C,S1F | G3 1200V SIC-MOSFET TO-247 60MO | 45 - 立即发货 | $155.20 | 查看详情 |
| | TW045N120C,S1F | G3 1200V SIC-MOSFET TO-247 45MO | 91 - 立即发货 | $185.44 | 查看详情 |
| | TW030N120C,S1F | G3 1200V SIC-MOSFET TO-247 30MO | 30 - 立即发货 | $269.42 | 查看详情 |
| | TW015N120C,S1F | G3 1200V SIC-MOSFET TO-247 15MO | 57 - 立即发货 | $532.10 | 查看详情 |
| | TW083N65C,S1F | G3 650V SIC-MOSFET TO-247 83MOH | 142 - 立即发货 | $100.00 | 查看详情 |
| | TW048N65C,S1F | G3 650V SIC-MOSFET TO-247 48MOH | 33 - 立即发货 | $127.64 | 查看详情 |
