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The FIT rates for eGaN FETs shown in the previous slides gain more significance when compared with the rates for silicon and SiC power MOSFETs. On this slide the table provides such a comparison. The upper portion of the table compares HTGB FIT rates for a typical silicon n-channel MOSFET and a 1200 V SiC MOSFET. Both parts have comparable on resistance to the EPC2016. Because the safe gate operating range and transfer characteristics of these parts are different from eGaN FETs, the failure rates in each case were taken at the gate voltage where the parts are fully enhanced. For the silicon part, this is 10 V; for SiC, it is 20 V. Generally speaking, a FIT rate less than 100 is considered acceptable reliability, and a rate less than ten is deemed excellent. The lower portion of the table makes a similar comparison for HTRB reliability. For both HTGB and HTRB, the FIT rates for eGaN FETs are lower than the other two technologies. It is important to note that FIT rates of the order of one or less cannot be accurately quoted without conducting large sample size trials involving billions of device hours. Therefore, it is not yet possible to conclude that eGaN technology is significantly more reliable than silicon or SiC based on just this acceleration study. However, it can be concluded that the dominant failure mechanisms for eGaN FETs do not present a fundamental limitation for eGaN technology to meet and surpass the reliability of standards of MOSFETs and SiC transistors.
