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eGaN® FET Reliability

EPC

This presentation will discuss the reliability of commercially available enhancement mode gallium nitride transistors from EPC. To explain the devices’ reliability, this presentation will review how they operate and highlight both their similarities and differences versus today’s power MOSFETs. Additionally, this presentation will describe the reliability tests that were performed and the results achieved for EPC’s first-generation eGaN FETs.


Related Parts

图片制造商零件编号描述漏源电压（Vdss）25°C 时电流 - 连续漏极 (Id)可供货数量价格
GANFET N-CH 100V 36A DIE OUTLINEEPC2001CGANFET N-CH 100V 36A DIE OUTLINE100 V36A（Ta）107616 - 立即发货$40.49查看详情
PTM Published on: 2011-04-06
PTM Updated on: 2016-03-30

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