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In summary, eGaN FETs have been subjected to a wide variety of reliability tests for device qualification. These tests included High Temperature Reverse Bias, High Temperature Gate Bias, High Temperature Storage, Temperature Cycling, High Temperature High Humidity Reverse Bias, Autoclave, and Moisture Sensitivity. Parts were stable under the stress conditions and are fully qualified, demonstrating the robustness of these chipscale GaN transistors. Acceleration factor tests were conducted over voltage and temperature in order to estimate the time to failure within the datasheet operating range. Under both HTRB and HTGB type stress conditions, the MTTF well exceeds ten years at maximum operating temperature and at both the rated maximum drain-source and gate-source voltages. These studies have further shown that eGaN FETs are able to operate with very low probability of failures within the reasonable lifetime of end products manufactured today.
