Name: IPB80N06S2L06ATMA2
Brand: Infineon Technologies
SKU: IPB80N06S2L06ATMA2TR-ND
Price: 40.03 CNY
Availability: InStock

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IPB80N06S2L06ATMA2
DigiKey Part Number	IPB80N06S2L06ATMA2TR-ND - Tape & Reel (TR) IPB80N06S2L06ATMA2CT-ND - Cut Tape (CT) IPB80N06S2L06ATMA2DKR-ND - Digi-Reel®
Manufacturer	Infineon Technologies
Manufacturer Product Number	IPB80N06S2L06ATMA2
Description	MOSFET N-CH 55V 80A TO263-3
Manufacturer Standard Lead Time	18 Weeks
Customer Reference
Detailed Description	N-Channel 55 V 80A (Tc) 250W (Tc) Surface Mount PG-TO263-3-2
Datasheet	Datasheet
EDA/CAD Models	IPB80N06S2L06ATMA2 Models

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Category Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs	Gate Charge (Qg) (Max) @ Vgs 150 nC @ 10 V
Mfr Infineon Technologies	Vgs (Max) ±20V
Series OptiMOS™	Input Capacitance (Ciss) (Max) @ Vds 3800 pF @ 25 V
Packaging Tape & Reel (TR) Cut Tape (CT) Digi-Reel®	Power Dissipation (Max) 250W (Tc)
Part Status Active	Operating Temperature -55°C ~ 175°C (TJ)
FET Type N-Channel	Grade Automotive
Technology MOSFET (Metal Oxide)	Qualification AEC-Q101
Drain to Source Voltage (Vdss) 55 V	Mounting Type Surface Mount
Current - Continuous Drain (Id) @ 25°C 80A (Tc)	Supplier Device Package PG-TO263-3-2
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V	Package / Case TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Rds On (Max) @ Id, Vgs 6mOhm @ 69A, 10V	Base Product Number IPB80N
Vgs(th) (Max) @ Id 2V @ 180µA

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