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Silicon Carbide MOSFETs Slide 5

Shown here is a data brief on the first SiC FET introduced by ST in 2015, the SCT30N120. It is a 45 A, 1200 V FET in the Hip247 package. This package is identical in form to the industry standard TO-247, but is comprised of materials capable of qualifying the part to 200°C operating temperature. It is in full production with data available on www.st.com. When driven at 20 V from gate to source, the RDSON at 25°C is only 80 mΩ. Even more remarkable is that at 125°C operation temperature, the RDSON only increases to 85 mΩ.

PTM Published on: 2016-05-06