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Silicon Carbide MOSFETs Slide 14

Comparing the IGBT solution operating at 25 kHz with the SiC FET solution operating at 100 kHz, it is seen that similar performance can be acheived with the SiC at 4 times the operating frequency. Even higher efficiencies could be obtained using synchronous rectification in place of the freewheeling diode in the boost converter.

PTM Published on: 2016-05-06