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The L99ASC03 features symmetric high-side and low-side gate drivers, so the electronics are identical. The 15 KΩ resistors between the gate and the source within the gate drive block provide a discharge path for any transient pulses that may be present in the environment during switching. This prevents a floating gate condition, where a FET could be accidentally turned ON; a very good feature. The slew rate of the gate drivers are programmable, allowing for adjustment based on MOSFETs being used. MOSFET switching can be slewed based on the ambient temperature and the load current flowing through the MOSFET, because these conditions change gate driver requirements. As mentioned earlier, these are dynamically programmable via SPI. Built-in cross-current protection and shoot-through protection prevent any high side and corresponding low side MOSFETs from turning on at the same time. The dead time between commutation is also configurable via SPI. Programmable drain source monitoring measures the voltage drop between the drain and the source of the MOSFET that is being driven, which is proportional to the current flowing through that MOSFET. This can be used for detecting a short circuit to ground or a short circuit to battery. It can also be used offline to detect an open load condition. The L99ASC03 can be PWM and switched up to 80 kHz.
