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adv in pfc
SiC Schottky Diodes are majority carrier devices which do not have a recombination process while turned off. Therefore, there is no reverse recovery current during this time. The reverse characteristics are not affected by forward bias current or junction temperature. The switching losses can be 90% less with SiC SBD over Silicon (Si) fast recovery diodes, where the junction temperature affects recovery current and recovery time. For this reason, SiC SBDs are a great solution for boost diodes in PFC circuits, where the zero-recovery traits are needed for added system efficiency.
PTM Published on: 2018-08-28