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fwd volt and rev
SiC SBDs have similar threshold voltage as Si FRDs (i.e. a little less than 1 V). Threshold voltage is determined by Schottky barrier height. Normally, a low barrier height corresponds with low threshold voltage and high reverse leakage current. In its second-generation SBDs, ROHM has improved the process for reducing threshold voltage (by about 0.15 V) while maintaining leakage current and recovery performance. Unlike Si FRDs, VF increases with temperature. SiC SBDs have a positive temperature coefficient and thus will not cause thermal runaway when used in parallel.
PTM Published on: 2018-08-28