eGaN® FET Reliability
更新日期: 2016-03-30
Significant performance and size advantages over silicon power MOSFETs allow for improved system efficiency, reduced system costs, and reduced design size.
Duration: 5 minutes
Switching Regulators
发布日期:2016-01-19
An overview of Renesas' integrated FET switching regulators portfolio.
Duration: 25 minutes
eGan® FETs for DC-DC Conversion
发布日期:2010-01-22
eGan® power FETs offer performance enhancements well beyond the realm of silicon-based MOSFETs.
Duration: 5 minutesThis video discusses Analog Devices' LTC7890 and LTC7891, dual-phase synchronous DC/DC switching regulator controllers optimized for GaN FET power stages. Designed for high efficiency and flexibility, they simplify power system design.
Nexperia advanced N-Channel application-specific field-effect transistors (ASFETs) are optimized for high-power applications such as Power-over-Ethernet (PoE), eFuse, and relay replacement.
eGan® FET's Characteristics
发布日期:2010-10-06
The operation of EPC’s enhancement mode gallium nitride transistors.
Duration: 5 minutes
High Voltage Input Step-Down Switching Regulators
发布日期:2015-02-06
Overview of ROHM Semiconductor’s high-voltage input >36 V step down switching converters.
Duration: 5 minutes
SuperSwitcherII™ - Step Down DC-DC Regulator Family
发布日期:2011-12-01
SuperSwitcherII™ family are highly efficient, wide-input step-down DC-DC buck regulators in a common footprint that are used in high power density applications.
Duration: 5 minutes
RF Small Signal Products Part 1
发布日期:2011-11-02
NXP offers a variety of RF discrete products and demo boards that help increase the speed of design cycle, improve system performance, and lower system costs.
Duration: 10 minutes
Second Gen Lead Free eGaN® FETs Overview
发布日期:2011-10-28
The new-generation is lead free and halogen free and has improved electrical performance.
Duration: 5 minutesThis video discusses the EPC2152 Integrated ePower Stage by EPC, a single-chip driver and half-bridge power stage. It offers fast switching, robust transient handling, and a compact design for high-frequency power applications.
eGaN Integrated GaN Power
发布日期:2015-06-19
eGaN technology offers higher power density through size reduction and speed reduction, and parasitic reduction.
Duration: 5 minutes