eGaN FET's Characteristics

eGan® FET's Characteristics

EPC

This tutorial covers the operation of EPC’s enhancement mode gallium nitride transistors.  To explain the eGaN devices’ ease-of-use, it is necessary to first understand how the device operates and highlight both the similarities and differences versus current power MOSFETs.

Related Parts

图片制造商零件编号描述功能嵌入式使用的 IC/零件可供货数量价格查看详情
EVAL BOARD FOR EPC2015EPC9001EVAL BOARD FOR EPC2015半 H 桥驱动器（外部 FET）无EPC20150 - 立即发货$808.43查看详情
EVAL BOARD FOR EPC2001EPC9017EVAL BOARD FOR EPC2001半 H 桥驱动器（外部 FET）无EPC20010 - 立即发货$1,066.68查看详情
EVAL BOARD FOR EPC8007EPC9027EVAL BOARD FOR EPC8007半 H 桥驱动器（外部 FET）无EPC80070 - 立即发货$1,291.25查看详情
EVAL BOARD FOR EPC2001EPC9002EVAL BOARD FOR EPC2001半 H 桥驱动器（外部 FET）无EPC20010 - 立即发货$808.43查看详情
PTM Published on: 2010-10-06

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Related Product Training Modules

Driving eGaN FETs with the LM5113 The advantages of EPC’s enhancement mode gallium nitride transistors and the key design challenges of implementing the new device technology.
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