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eGaN FETs have no p-body and therefore, no p-body diode and no reverse recovery. Without a physical diode, reverse conduction forces the drain voltage lower until gate to drain voltage enhances the channel. VSD must reach threshold for current to begin to conduct. Since the reverse conduction mechanism is the same as the forward conduction mechanism, it is not surprising that the reverse conduction curve looks very similar to the transfer characteristics curve. Reverse conduction voltage can go from almost zero volts to over two volts in normal conditions.
PTM Published on: 2012-10-16
