Slide 1 Slide 2 Slide 3 Slide 4 Slide 5 Slide 6 Slide 7 Slide 8 Slide 9 Slide 10 Slide 11 Slide 12 Slide 13 Slide 14 Slide 15 Slide 16 Slide 17 Slide 18 Product List
LM5113-Slide10

Overcoming low VGS overhead also has a combination of solutions. One solution is to have separate source and sink terminals. External resistance in the source path can be tuned to critically damp the turn on to where the FET is turned on very quickly without overshoot on the gate. This resistance can also used to control switch node dv/dt and limit ringing and over-shoot.

PTM Published on: 2012-10-16