Slide 1 Slide 2 Slide 3 Slide 4 Slide 5 Slide 6 Slide 7 Slide 8 Slide 9 Slide 10 Slide 11 Product List
eff full
Shown here are actual test results comparing the Wolfspeed C2M1000170D SiC MOSFET to two leading silicon MOSFETs. All data was collected using the flyback reference design with the same gate resistance and input voltage for all three devices. Notice that a 3 to 11% improvement is gained at 200 V by using the Wolfspeed SiC MOSFET, and Wolfspeed's MOSFET increased efficiency continues up to and beyond 1000 V. This efficiency increase provides a very significant improvement in thermal performance.
PTM Published on: 2013-10-30