onsemi 的 EMCxDXV5T1G 规格书

0N Semiconductnr® o NPN and PNP Silicon Surface Mount . Transistors with Monolithic Bias 1 Resistor Network The BRT (Bias Resistor Trans tor) contains a single trim, a monolithic bias network con. ‘ting of two re ors; a ert ' 0 or and a base—emitter re. or. These digital tra . designed to replace a single devtce and its external reststor bins network. The BRT eliminates these individual components by integrating them into a single device. In the EMC2DXV5TIG series. Q two complementary BRT devices are housed in the SOT—553 package which i. deal for low power surface mount applications where hourd space is at a premium. Features - Simplifies Circuit Design MARKING - Reduces Board Space n n I Reduces Component Count - NSV Prefix tor Automotive and Other Applications Requiring 0 Unique Site and Control Change Requirements; AEC—QlOl u u u Qualified and PPAF Capable I These are Pb—Free Devices MAXIMUM RATINGS (TA = 25°C unless otherwtse noted, common tot or and Q2, 7 minus sign tor or tPNP) omitted) Rating Symbol Value Unit CollectoreBase Voltage V550 50 Vde CollectoraEmltter Voltage vCEO 50 Vde Collector Current lc too mAdc Stresses exceeding those listed in the Maximum Ratings table may damage the device. it any ot these limits ate exceeded. device tunctionality should not be assumed damage may occur and reliability may he attected. o Semiconductor Componenls lnduslnes. LLC am I May, 2014 — Rev. 7
© Semiconductor Components Industries, LLC, 2014
May, 2014 − Rev. 7 1Publication Order Number:
EMC2DXV5T1/D
EMC2DXV5T1G,
EMC3DXV5T1G,
EMC4DXV5T1G,
EMC5DXV5T1G
Dual Common
Base-Collector Bias
Resistor Transistors
NPN and PNP Silicon Surface Mount
Transistors with Monolithic Bias
Resistor Network
The BRT (Bias Resistor Transistor) contains a single transistor with
a monolithic bias network consisting of two resistors; a series base
resistor and a base−emitter resistor. These digital transistors are
designed to replace a single device and its external resistor bias
network. The BRT eliminates these individual components by
integrating them into a single device. In the EMC2DXV5T1G series,
two complementary BRT devices are housed in the SOT−553 package
which is ideal for low power surface mount applications where board
space is at a premium.
Features
•Simplifies Circuit Design
•Reduces Board Space
•Reduces Component Count
•NSV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
•These are Pb−Free Devices
MAXIMUM RATINGS (TA = 25°C unless otherwise noted, common for Q1
and Q2, − minus sign for Q1 (PNP) omitted)
Rating Symbol Value Unit
Collector-Base Voltage VCBO 50 Vdc
Collector-Emitter Voltage VCEO 50 Vdc
Collector Current IC100 mAdc
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
MARKING DIAGRAM
45
Q1
Q2
R1
R1 R2
R2
312
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SOT−553
CASE 463B
1
5
Ux M G
G
Ux = Specific Device Code
x = C, 3, E, or 5
M = Date Code
G= Pb−Free Package
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
ORDERING INFORMATION
(Note: Microdot may be in either location)
UJA Tm Tsxg
EMC2DXV5T1G, EMC3DXV5T1G, EMC4DXV5T1G, EMC5DXV5T1G
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2
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
ONE JUNCTION HEATED
Total Device Dissipation
TA = 25°C
Derate above 25°C
PD357 (Note 1)
2.9 (Note 1) mW
mW/°C
Thermal Resistance, Junction-to-Ambient RqJA 350 (Note 1) °C/W
BOTH JUNCTIONS HEATED
Total Device Dissipation
TA = 25°C
Derate above 25°C
PD500 (Note 1)
4.0 (Note 1) mW
mW/°C
Thermal Resistance, Junction-to-Ambient RqJA 250 (Note 1) °C/W
Junction and Storage Temperature TJ, Tstg −55 to +150 °C
1. FR−4 @ Minimum Pad
DEVICE ORDERING INFORMATION, MARKING AND RESISTOR VALUES
Transistor 1 − PNP Transistor 2 − NPN
Device Marking R1 (K) R2 (K) R1 (K) R2 (K) Package Shipping†
EMC2DXV5T1G UC 22 22 22 22
SOT−553
(Pb−Free)
4000 / Tape & Reel
NSVEMC2DXV5T1G* UC 22 22 22 22 4000 / Tape & Reel
EMC3DXV5T1G U3 10 10 10 10 4000 / Tape & Reel
EMC3DXV5T5G 8000 / Tape & Reel
EMC4DXV5T1G UE 10 47 47 47 4000 / Tape & Reel
EMC5DXV5T1G U5 4.7 10 47 47 4000 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
*NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP
Capable.
Figure 1. Derating Curve
250
200
150
100
50
0
-50 0 50 100 150
TA, AMBIENT TEMPERATURE (°C)
PD, POWER DISSIPATION (MILLIWATTS)
RqJA = 833°C/W
EMC2DXV5T1G, EMC3DXV5T1G, EMC4DXV5T1G, EMC5DXV5T1G
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3
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
Q1 TRANSISTOR: PNP
OFF CHARACTERISTICS
Collector-Base Cutoff Current (VCB = 50 V, IE = 0) ICBO − − 100 nAdc
Collector-Emitter Cutoff Current (VCB = 50 V, IB = 0) ICEO − − 500 nAdc
Emitter-Base Cutoff Current EMC2DXV5T1G
(VEB = 6.0 V, IC = 0) EMC3DXV5T1G
EMC4DXV5T1G
EMC5DXV5T1G
IEBO −
−
−
−
−
−
−
−
0.2
0.5
0.2
1.0
mAdc
ON CHARACTERISTICS
Collector-Base Breakdown Voltage (IC = 10 mA, IE = 0) V(BR)CBO 50 − − Vdc
Collector-Emitter Breakdown Voltage (IC = 2.0 mA, IB = 0) V(BR)CEO 50 − − Vdc
DC Current Gain EMC2DXV5T1G
(VCE = 10 V, IC = 5.0 mA) EMC3DXV5T1G
EMC4DXV5T1G
EMC5DXV5T1G
hFE 60
35
80
20
100
60
140
35
−
−
−
−
Collector−Emitter Saturation Voltage (IC = 10 mA, IB = 0.3 mA) VCE(SAT) − − 0.25 Vdc
Output Voltage (on) (VCC = 5.0 V, VB = 2.5 V, RL = 1.0 kW)VOL − − 0.2 Vdc
Output Voltage (off) (VCC = 5.0 V, VB = 0.5 V, RL = 1.0 kW)VOH 4.9 − − Vdc
Input Resistor EMC2DXV5T1G
EMC3DXV5T1G, EMC4DXV5T1G
EMC5DXV5T1G
R1 15.4
7.0
3.3
22
10
4.7
28.6
13
6.1
kW
Resistor Ratio EMC2DXV5T1G
EMC3DXV5T1G
EMC4DXV5T1G
EMC5DXV5T1G
R1/R2 0.8
0.8
0.17
0.38
1.0
1.0
0.21
0.47
1.2
1.2
0.25
0.56
Q2 TRANSISTOR: NPN
OFF CHARACTERISTICS
Collector-Base Cutoff Current (VCB = 50 V, IE = 0) ICBO − − 100 nAdc
Collector-Emitter Cutoff Current (VCB = 50 V, IB = 0) ICEO − − 500 nAdc
Emitter-Base Cutoff Current EMC2DXV5T1G
(VEB = 6.0 V, IC = 0) EMC3DXV5T1G
EMC4DXV5T1G, EMC5DXV5T1G
IEBO −
−
−
−
−
−
0.2
0.5
0.1
mAdc
ON CHARACTERISTICS
Collector-Base Breakdown Voltage (IC = 10 mA, IE = 0) V(BR)CBO 50 − − Vdc
Collector-Emitter Breakdown Voltage (IC = 2.0 mA, IB = 0) V(BR)CEO 50 − − Vdc
DC Current Gain EMC2DXV5T1G
(VCE = 10 V, IC = 5.0 mA) EMC3DXV5T1G
EMC4DXV5T1G, EMC5DXV5T1G
hFE 60
35
80
100
60
140
−
−
−
Collector−Emitter Saturation Voltage (IC = 10 mA, IB = 0.3 mA) VCE(SAT) − − 0.25 Vdc
Output Voltage (on) (VCC = 5.0 V, VB = 2.5 V, RL = 1.0 kW)VOL − − 0.2 Vdc
Output Voltage (off) (VCC = 5.0 V, VB = 0.5 V, RL = 1.0 kW)VOH 4.9 − − Vdc
Input Resistor EMC2DXV5T1G
EMC3DXV5T1G
EMC4DXV5T1G, EMC5DXV5T1G
R1 15.4
7.0
33
22
10
47
28.6
13
61
kW
Resistor Ratio EMC2DXV5T1G
EMC3DXV5T1G
EMC4DXV5T1G, EMC5DXV5T1G
R1/R2 0.8
0.8
0.8
1.0
1.0
1.0
1.2
1.2
1.2
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
EMC2DXV5T1G, EMC3DXV5T1G, EMC4DXV5T1G, EMC5DXV5T1G
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4
TYPICAL ELECTRICAL CHARACTERISTICS − EMC2DXV5T1 PNP TRANSISTOR
Vin, INPUT VOLTAGE (VOLTS)
IC, COLLECTOR CURRENT (mA) hFE, DC CURRENT GAIN
Figure 2. VCE(sat) versus ICFigure 3. DC Current Gain
1000
10
IC, COLLECTOR CURRENT (mA)
100
10
1100
Figure 4. Output Capacitance
IC, COLLECTOR CURRENT (mA)
010 20 30
VO = 0.2 V
TA=-25°C
75°C
100
10
1
0.1 40 50
Figure 5. Output Current versus Input Voltage
100
10
1
0.1
0.01
0.001 0 1 2 3 4
Vin, INPUT VOLTAGE (V)
5 6 7 8 9 10
Figure 6. Input Voltage versus Output Current
0.01
0.1
1
10
40
IC, COLLECTOR CURRENT (mA)
0 20 50
75°C
25°C
TA=-25°C
50
010 20 30 40
4
3
2
1
0
VR, REVERSE BIAS VOLTAGE (V)
Cob , CAPACITANCE (pF)
25°C
IC/IB = 10
25°C
-25°C
VCE = 10 V
TA=75°C
f = 1 MHz
lE = 0 mA
TA = 25°C
75°C25°C
TA=-25°C
VO = 5 V
VCE(sat), COLLECTOR EMITTER SATURATION VOLTAGE (V)
EMC2DXV5T1G, EMC3DXV5T1G, EMC4DXV5T1G, EMC5DXV5T1G
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TYPICAL ELECTRICAL CHARACTERISTICS − EMC2DXV5T1 NPN TRANSISTOR
Vin, INPUT VOLTAGE (VOLTS)
IC, COLLECTOR CURRENT (mA) hFE, DC CURRENT GAIN
Figure 7. VCE(sat) versus IC
1002030
IC, COLLECTOR CURRENT (mA)
10
1
0.1
TA=-25°C
75°C
25°C
40 50
Figure 8. DC Current Gain
Figure 9. Output Capacitance
1
0.1
0.01
0.001 020 40 50
IC, COLLECTOR CURRENT (mA)
1000
100
10 1 10 100
IC, COLLECTOR CURRENT (mA)
TA=75°C
25°C
-25°C
TA=-25°C
25°C
Figure 10. Output Current versus Input Voltage
75°C
25°C
TA=-25°C
100
10
1
0.1
0.01
0.001 01 234
Vin, INPUT VOLTAGE (V)
56 78 910
Figure 11. Input Voltage versus Output
Current
50
010203040
4
3
1
2
0
VR, REVERSE BIAS VOLTAGE (V)
Cob, CAPACITANCE (pF)
75°C
VCE = 10 V
f = 1 MHz
IE = 0 mA
TA = 25°C
VO = 5 V
VO = 0.2 V
IC/IB = 10
VCE(sat), COLLECTOR EMITTER SATURATION VOLTAGE (V)
EMC2DXV5T1G, EMC3DXV5T1G, EMC4DXV5T1G, EMC5DXV5T1G
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6
TYPICAL ELECTRICAL CHARACTERISTICS − EMC3DXV5T1 PNP TRANSISTOR
Vin, INPUT VOLTAGE (VOLTS)
IC, COLLECTOR CURRENT (mA)
hFE, DC CURRENT GAIN
Figure 12. VCE(sat) versus IC
100
10
1
0.1
0.01
0.001 0
Vin, INPUT VOLTAGE (V)
TA=-25°C
25°C
1 2 3 4 5 6 7 8 9 10
Figure 13. DC Current Gain
Figure 14. Output Capacitance Figure 15. Output Current versus Input
Voltage
Figure 16. Input Voltage versus Output
Current
0.01
20
IC, COLLECTOR CURRENT (mA)
0.1
1
0 40 50
1000
1 10 100
IC, COLLECTOR CURRENT (mA)
TA=75°C
-25°C
100
10
0
IC, COLLECTOR CURRENT (mA)
0.1
1
10
100
10 20 30 40 50
TA=-25°C
25°C
75°C
75°C
IC/IB = 10
50
010203040
4
3
1
2
VR, REVERSE BIAS VOLTAGE (V)
Cob , CAPACITANCE (pF)
0
TA=-25°C
25°C
75°C
25°C
VCE = 10 V
f = 1 MHz
lE = 0 mA
TA = 25°C
VO = 5 V
VO = 0.2 V
VCE(sat), COLLECTOR EMITTER SATURATION VOLTAGE (V)
EMC2DXV5T1G, EMC3DXV5T1G, EMC4DXV5T1G, EMC5DXV5T1G
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TYPICAL ELECTRICAL CHARACTERISTICS − EMC3DXV5T1 NPN TRANSISTOR
Vin, INPUT VOLTAGE (VOLTS)
IC, COLLECTOR CURRENT (mA) hFE, DC CURRENT GAIN
Figure 17. VCE(sat) versus ICFigure 18. DC Current Gain
Figure 19. Output Capacitance Figure 20. Output Current versus Input Voltage
1000
10
IC, COLLECTOR CURRENT (mA)
TA=75°C
25°C
-25°C
100
101 100
75°C 25°C
100
0
Vin, INPUT VOLTAGE (V)
10
1
0.1
0.01
0.001 246810
TA=-25°C
0
IC, COLLECTOR CURRENT (mA)
100
TA=-25°C
75°C
10
1
0.1 10 20 30 40 50
25°C
Figure 21. Input Voltage versus Output
Current
0.001
TA=-25°C
75°C
25°C
0.01
0.1
1
40
IC, COLLECTOR CURRENT (mA)
020 50
50
0 10 203040
4
3
2
1
0
VR, REVERSE BIAS VOLTAGE (V)
Cob, CAPACITANCE (pF)
IC/IB = 10 VCE = 10 V
f = 1 MHz
IE = 0 mA
TA = 25°C
VO = 5 V
VO = 0.2 V
VCE(sat), COLLECTOR EMITTER SATURATION VOLTAGE (V)
EMCZDXV5T1G, EMCSDXV5T1 G, EMC4DXV5T1 G, EMC5DXV5T1 G TYPICAL ELECTRICAL CHARACTERISTICS -EMC4DXV5T1 PNP TRANSISTOR Tao E 160 E g Mo 0.1 g ml 5 100 u 5 so Lu um E 60 2 o o 40 '3. g 20 ”W0 20 4a 60 80 0i 2 4 5 3 ID 15 20 40 50 Cu 70 an IC COLLECTOR CURRENT (mAi lc‘ COLLECTOR CURRENT (MAI Figure 22. VCR“) versus lo Figure 23. DC Currenl Gain 100 % E E E z u: g u: 5 8 “7 E g 0. 5 n Lu 0° 5' o g I 02468101520253035404550 n 2 4 6 a v“. REVERSE BIAS VOLTAGE (v) vm. iNPUT VOLTAGE 1v; Figure 24. Output Capacitance Figure 25. OquuI Current versus lnpuI Vol! +12V a ’3 O . . . a Typical Application 5 for PNP BRTs E o > ’5 a z n 10 20 30 40 50 i Ic. COLLECTOR CURRENT (MA) '5 _ Figure 26. Input Voltage versus Output Current Figure 27. Inexpensive, Unregulaled Cu hllp :Nonsemi .com a
EMC2DXV5T1G, EMC3DXV5T1G, EMC4DXV5T1G, EMC5DXV5T1G
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TYPICAL ELECTRICAL CHARACTERISTICS −EMC4DXV5T1 PNP TRANSISTOR
10
1
0.1 010 20 30 4050
100
10
10 246810
4.5
4
3.5
3
2.5
2
1.5
1
0.5
00 2 4 6 8101520253035404550
VR, REVERSE BIAS VOLTAGE (V)
Vin, INPUT VOLTAGE (VOLTS)
IC, COLLECTOR CURRENT (mA) hFE, DC CURRENT GAIN (NORMALIZED)
Figure 22. VCE(sat) versus IC
IC, COLLECTOR CURRENT (mA)
0 20406080
Figure 23. DC Current Gain
1 10 100
IC, COLLECTOR CURRENT (mA)
Figure 24. Output Capacitance Figure 25. Output Current versus Input Voltage
Vin, INPUT VOLTAGE (V)
Cob, CAPACITANCE (pF)
Figure 26. Input Voltage versus Output Current
IC, COLLECTOR CURRENT (mA)
1
0.1
0.01
0.001
-25°C
25°C
TA=75°C
VCE = 10 V
180
160
140
120
100
80
60
40
20
02 4 6 8 15 20 40 50 60 70 80 90
f = 1 MHz
lE = 0 V
TA = 25°C
LOAD
+12 V
Figure 27. Inexpensive, Unregulated Current Sourc
e
Typical Application
for PNP BRTs
25°C
IC/IB = 10 TA=-25°C
TA=75°C25°C
-25°C
VO = 5 V
VO = 0.2 V 25°C
TA=-25°C
75°C
75°C
VCE(sat), COLLECTOR EMITTER SATURATION VOLTAGE (V)
EMC2DXV5T1G, EMC3DXV5T1G, EMC4DXV5T1G, EMC5DXV5T1G
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TYPICAL ELECTRICAL CHARACTERISTICS − EMC5DXV5T1 PNP TRANSISTOR
25°C
IC, COLLECTOR CURRENT (mA) hFE, DC CURRENT GAIN
Figure 28. VCE(sat) versus ICFigure 29. DC Current Gain
Figure 30. Output Capacitance Figure 31. Output Current versus Input Voltage
1000
10
IC, COLLECTOR CURRENT (mA)
TA=75°C
25°C
-25°C
100
11 1000
75°C
25°C
100
0
Vin, INPUT VOLTAGE (V)
10
1
0.1
0.01 2468 12
TA=-25°C
TA=75°C
-25°C
0.01
0.1
1
40
IC, COLLECTOR CURRENT (mA)
020 50
010203040
12
6
4
2
0
VR, REVERSE BIAS VOLTAGE (V)
Cob, CAPACITANCE (pF)
IC/IB = 10 VCE = 10 V
f = 1 MHz
IE = 0 mA
TA = 25°C
VO = 5 V
3010 60 100
10
10
8
15 25 35 455
SERIES 1
10
VCE(sat), COLLECTOR EMITTER SATURATION VOLTAGE (V)
EMC2DXV5T1G, EMC3DXV5T1G, EMC4DXV5T1G, EMC5DXV5T1G
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TYPICAL ELECTRICAL CHARACTERISTICS − EMC4DXV5T1, EMC5DXV5T1 NPN TRANSISTOR
Vin, INPUT VOLTAGE (VOLTS)
IC, COLLECTOR CURRENT (mA) hFE, DC CURRENT GAIN
Figure 32. VCE(sat) versus IC
0246810
100
10
1
0.1
0.01
0.001
Vin, INPUT VOLTAGE (V)
TA=-25°C
75°C25°C
Figure 33. DC Current Gain
Figure 34. Output Capacitance
100
10
1
0.1
010 203040 50
IC, COLLECTOR CURRENT (mA)
Figure 35. Output Current versus Input Voltage
1000
10
IC, COLLECTOR CURRENT (mA)
TA=75°C
25°C
-25°C
100
10 1 100
25°C
75°C
50
010203040
1
0.8
0.6
0.4
0.2
0
VR, REVERSE BIAS VOLTAGE (V)
Cob, CAPACITANCE (pF)
Figure 36. Input Voltage versus Output Current
020 40 50
10
1
0.1
0.01
IC, COLLECTOR CURRENT (mA)
25°C
75°C
VCE = 10 V
f = 1 MHz
IE = 0 mA
TA = 25°C
VO = 5 V
VO = 0.2 V
IC/IB = 10
TA=-25°C
TA=-25°C
VCE(sat), COLLECTOR EMITTER SATURATION VOLTAGE (V)
J b be hem e .—-I mum \ ,iiAr , + ",in7 and
EMC2DXV5T1G, EMC3DXV5T1G, EMC4DXV5T1G, EMC5DXV5T1G
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PACKAGE DIMENSIONS
SOT−553, 5 LEAD
CASE 463B
ISSUE C
eM
0.08 (0.003) X
b5 PL
A
c
−X−
−Y−
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETERS
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH
THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM
THICKNESS OF BASE MATERIAL.
D
E
Y
12 3
45
L
1.35
0.0531
0.5
0.0197
ǒmm
inchesǓ
SCALE 20:1
0.5
0.0197
1.0
0.0394
0.45
0.0177
0.3
0.0118
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
SOLDERING FOOTPRINT*
HEDIM
AMIN NOM MAX MIN
MILLIMETERS
0.50 0.55 0.60 0.020
INCHES
b0.17 0.22 0.27 0.007
c
D1.55 1.60 1.65 0.061
E1.15 1.20 1.25 0.045
e0.50 BSC
L0.10 0.20 0.30 0.004
0.022 0.024
0.009 0.011
0.063 0.065
0.047 0.049
0.008 0.012
NOM MAX
1.55 1.60 1.65 0.061 0.063 0.065
HE
0.08 0.13 0.18 0.003 0.005 0.007
0.020 BSC
RECOMMENDED
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and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC
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