onsemi 的 BSS138LT1 规格书

0N Selllizmluluctorg www.0nsemi.com
© Semiconductor Components Industries, LLC, 2016
March, 2019 − Rev. 12
1Publication Order Number:
BSS138LT1/D
BSS138L, BVSS138L
Power MOSFET
200 mA, 50 V
N−Channel SOT−23
Typical applications are DC−DC converters, power management in
portable and battery−powered products such as computers, printers,
PCMCIA cards, cellular and cordless telephones.
Features
•Low Threshold Voltage (VGS(th): 0.85 V−1.5 V) Makes it Ideal for
Low Voltage Applications
•Miniature SOT−23 Surface Mount Package Saves Board Space
•BVSS Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
•These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Rating Symbol Value Unit
Drain−to−Source Voltage VDSS 50 Vdc
Gate−to−Source Voltage − Continuous VGS ±20 Vdc
Drain Current
− Continuous @ TA = 25°C
− Pulsed Drain Current (tp ≤ 10 ms)
ID
IDM
200
800
mA
Total Power Dissipation @ TA = 25°C PD225 mW
Operating and Storage Temperature
Range
TJ, Tstg −55 to 150 °C
Thermal Resistance,
Junction−to−Ambient
RqJA 556 °C/W
Maximum Lead Temperature for
Soldering Purposes, for 10 seconds
TL260 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
3
1
2
Device Package Shipping†
ORDERING INFORMATION
N−Channel
SOT−23
CASE 318
STYLE 21
J1 MG
G
MARKING
DIAGRAM
2
1
3
200 mA, 50 V
RDS(on) = 3.5 W
BSS138LT1G,
BVSS138LT1G
SOT−23
(Pb−Free)
3,000 / Tape & Reel
BSS138LT7G SOT−23
(Pb−Free)
3,500 / Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
www.onsemi.com
1
J1 = Device Code
M = Date Code*
G= Pb−Free Package
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
BSS138LT3G,
BVSS138LT3G
SOT−23
(Pb−Free)
10,000 / Tape & Reel
(Note: Microdot may be in either location)
www onsem' com
BSS138L, BVSS138L
www.onsemi.com
2
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
(VGS = 0 Vdc, ID = 250 mAdc)
V(BR)DSS 50 − − Vdc
Zero Gate Voltage Drain Current
(VDS = 25 Vdc, VGS = 0 Vdc, 25°C)
(VDS = 50 Vdc, VGS = 0 Vdc, 25°C)
(VDS = 50 Vdc, VGS = 0 Vdc, 150°C)
IDSS
−
−
−
−
−
−
0.1
0.5
5.0
mAdc
Gate−Source Leakage Current (VGS = ±20 Vdc, VDS = 0 Vdc) IGSS − − ±0.1 mAdc
ON CHARACTERISTICS (Note 1)
Gate−Source Threshold Voltage
(VDS = VGS, ID = 1.0 mAdc)
VGS(th) 0.85 −1.5 Vdc
Static Drain−to−Source On−Resistance
(VGS = 2.75 Vdc, ID < 200 mAdc, TA = −40°C to +85°C)
(VGS = 5.0 Vdc, ID = 200 mAdc)
rDS(on)
−
−
5.6
−
10
3.5
W
Forward Transconductance
(VDS = 25 Vdc, ID = 200 mAdc, f = 1.0 kHz)
gfs 100 − − mmhos
DYNAMIC CHARACTERISTICS
Input Capacitance (VDS = 25 Vdc, VGS = 0, f = 1 MHz) Ciss −40 50 pF
Output Capacitance (VDS = 25 Vdc, VGS = 0, f = 1 MHz) Coss −12 25
Transfer Capacitance (VDG = 25 Vdc, VGS = 0, f = 1 MHz) Crss −3.5 5.0
SWITCHING CHARACTERISTICS (Note 2)
Turn−On Delay Time (VDD = 30 Vdc, ID = 0.2 Adc,) td(on) − − 20 ns
Turn−Off Delay Time td(off) − − 20
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
1. Pulse Test: Pulse Width ≤300 ms, Duty Cycle ≤ 2%.
2. Switching characteristics are independent of operating junction temperature.
“7:200 mA www.cnsemi.com
BSS138L, BVSS138L
www.onsemi.com
3
TYPICAL ELECTRICAL CHARACTERISTICS
RDS(on), DRAIN-TO-SOURCE RESISTANCE
(NORMALIZED)
Figure 1. On−Region Characteristics
1
TJ, JUNCTION TEMPERATURE (°C)
Figure 2. Transfer Characteristics
Figure 3. On−Resistance Variation with
Temperature
VGS = 10 V
ID = 0.8 A
-55 -5 45 95 145
0.6
0.8
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
0
4
0
QT, TOTAL GATE CHARGE (pC)
8
500
VDS = 40 V
TJ = 25°C
1000
ID = 200 mA
1500
1.2
2
1.4
1.6
1.8
VGS = 4.5 V
ID = 0.5 A
2000
10
2
6
Vgs(th) , VARIANCE (VOLTS)
1
TJ, JUNCTION TEMPERATURE (°C)
ID = 1.0 mA
-55 -5 45 95 145
0.75
0.875
1.125
1.25
0
0.3
0.4
0.1
0.6
0.2
Figure 4. Threshold Voltage Variation
with Temperature
1 1.5 2 2.5 3
ID, DRAIN CURRENT (AMPS)
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
Figure 5. Gate Charge
VDS = 10 V
150°C
25°C
-55°C
3.5
0.5
4
024 10
0
0.3
0.4
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
ID, DRAIN CURRENT (AMPS)
6
0.1
8
0.6
0.2
0.5
13 957
VGS = 3.25 V
VGS = 2.75 V
VGS = 2.5 V
VGS = 3.0 V
VGS = 3.5 V
0.7
0.8
TJ = 25°C
0.7
0.8
0.9
4.50.50
2.2
-30 20 70 120
2500 3000
VDS, DRAIN-TO-SOURCE VOLTAGE (V)
125°C
Figure 6. IDSS
1.0E-9
1.0E-8
10 15 20 25 30 35
1.0E-7
40
1.0E-6
1.0E-5
505045
150°C
IDSS, DRAIN-TO-SOURCE LEAKAGE (A)
www onsem' com
BSS138L, BVSS138L
www.onsemi.com
4
TYPICAL ELECTRICAL CHARACTERISTICS
RDS(on), DRAIN-TO-SOURCE RESISTANCE (OHMS)
Figure 7. On−Resistance versus Drain Current
0 0.1 0.2
2
5
6
Figure 8. On−Resistance versus Drain Current
ID, DRAIN CURRENT (AMPS)
Figure 9. On−Resistance versus Drain Current
0.001
0.1
1
Figure 10. On−Resistance versus Drain
Current
VSD, DIODE FORWARD VOLTAGE (VOLTS)
Figure 11. Body Diode Forward Voltage
ID, DIODE CURRENT (AMPS)
25°C
VGS = 2.5 V
TJ = 150°C
4
0 0.2 0.4 0.6
3
0.01
-55°C25°C
0.8
RDS(on), DRAIN-TO-SOURCE RESISTANCE (OHMS)
0 0.1 0.2
1
7
ID, DRAIN CURRENT (AMPS)
VGS = 2.75 V
5
3
0
120
40
0
80
510
Ciss
15
0.05 0.15 0.25
150°C
-55°C
6
8
4
2
0.05 0.15 0.25
201.0 1.2
150°C
25°C
-55°C
8
9
7
100
20
60
Figure 12. Capacitance
RDS(on), DRAIN-TO-SOURCE RESISTANCE (OHMS)
0 0.2 0.40.05
1
2.5
3
ID, DRAIN CURRENT (AMPS)
25°C
VGS = 4.5 V
2
1.5
RDS(on), DRAIN-TO-SOURCE RESISTANCE (OHMS)
0 0.2 0.40.05
1
4
ID, DRAIN CURRENT (AMPS)
VGS = 10 V
3
2
0.1 0.3 0.5
150°C
-55°C
3.5
4.5
2.5
1.5
0.1 0.3 0.5
150°C
25°C
-55°C
4
4.5
3.5
10
1
0.25 0.450.15 0.35
5
5.5
6
0.25 0.450.15 0.35
25
Coss
Crss
VGS = 2.75 V
TJ = 25°C
f = 1 MHz
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
C, CAPACITANCE (pF)
BSS138L, BVSS138L
www.onsemi.com
5
TYPICAL ELECTRICAL CHARACTERISTICS
RDS(on) LIMIT
0.001
1
0.01
Figure 13. Safe Operating Area
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
IDS, DRAIN−TO−SOURCE CURRENT (A)
0.1 10
1
TA = 25°C
VGS ≤ 10 V 1 ms
10 ms
dc
0.1
THERMAL LIMIT
PACKAGE LIMIT
100
0N Semiwndudw" w (a SCALE 4:1 7 + 7 7 w x :I: \ a - L_.L ON Semxcunduclm and ave lvademavks av Semxcanduclur Campunenls lnduslnes LLC dba ON Semxcanduclar ar \ls suhsxdmnes m xna Umled sxaxas andJm mhev commas ON Semxcunduclar vesewes ma th| to make changes wuhum Yunhev nauaa to any prnduns havem ON Semanduc‘m makes m7 wanamy represenlalmn m guarantee regardmg ma swamy at W; manuals can any pamcu‘av purpase nnv dues ON Semumnduclm assume any Mammy ansmg mac xna apphcahan m use no any pmduclnv mum and saaamcauy dwsc‘axms any and au Mammy mc‘udmg wmnam hmma‘mn spema‘ cansequenha‘ m \nmdenla‘ damages ON Semxmnduclar dues nn| aanyay any hcense under Ms pa|em thls nar xna ngms av n|hers
SOT−23 (TO−236)
CASE 318−08
ISSUE AS
DATE 30 JAN 2018
SCALE 4:1
D
A1
3
12
1
XXXMG
G
XXX = Specific Device Code
M = Date Code
G= Pb−Free Package
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “ G”,
may or may not be present.
GENERIC
MARKING DIAGRAM*
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH.
MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF
THE BASE MATERIAL.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH,
PROTRUSIONS, OR GATE BURRS.
SOLDERING FOOTPRINT
VIEW C
L
0.25
L1
e
EE
b
A
SEE VIEW C
DIM
A
MIN NOM MAX MIN
MILLIMETERS
0.89 1.00 1.11 0.035
INCHES
A1 0.01 0.06 0.10 0.000
b0.37 0.44 0.50 0.015
c0.08 0.14 0.20 0.003
D2.80 2.90 3.04 0.110
E1.20 1.30 1.40 0.047
e1.78 1.90 2.04 0.070
L0.30 0.43 0.55 0.012
0.039 0.044
0.002 0.004
0.017 0.020
0.006 0.008
0.114 0.120
0.051 0.055
0.075 0.080
0.017 0.022
NOM MAX
L1
H
STYLE 22:
PIN 1. RETURN
2. OUTPUT
3. INPUT
STYLE 6:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
STYLE 7:
PIN 1. EMITTER
2. BASE
3. COLLECTOR
STYLE 8:
PIN 1. ANODE
2. NO CONNECTION
3. CATHODE
STYLE 9:
PIN 1. ANODE
2. ANODE
3. CATHODE
STYLE 10:
PIN 1. DRAIN
2. SOURCE
3. GATE
STYLE 11:
PIN 1. ANODE
2. CATHODE
3. CATHODE−ANODE
STYLE 12:
PIN 1. CATHODE
2. CATHODE
3. ANODE
STYLE 13:
PIN 1. SOURCE
2. DRAIN
3. GATE
STYLE 14:
PIN 1. CATHODE
2. GATE
3. ANODE
STYLE 15:
PIN 1. GATE
2. CATHODE
3. ANODE
STYLE 16:
PIN 1. ANODE
2. CATHODE
3. CATHODE
STYLE 17:
PIN 1. NO CONNECTION
2. ANODE
3. CATHODE
STYLE 18:
PIN 1. NO CONNECTION
2. CATHODE
3. ANODE
STYLE 19:
PIN 1. CATHODE
2. ANODE
3. CATHODE−ANODE
STYLE 23:
PIN 1. ANODE
2. ANODE
3. CATHODE
STYLE 20:
PIN 1. CATHODE
2. ANODE
3. GATE
STYLE 21:
PIN 1. GATE
2. SOURCE
3. DRAIN
STYLE 1 THRU 5:
CANCELLED
STYLE 24:
PIN 1. GATE
2. DRAIN
3. SOURCE
STYLE 25:
PIN 1. ANODE
2. CATHODE
3. GATE
STYLE 26:
PIN 1. CATHODE
2. ANODE
3. NO CONNECTION
STYLE 27:
PIN 1. CATHODE
2. CATHODE
3. CATHODE
2.10 2.40 2.64 0.083 0.094 0.104
HE
0.35 0.54 0.69 0.014 0.021 0.027
c
0−−− 10 0 −−− 10
T°°°°
T
3X
TOP VIEW
SIDE VIEW
END VIEW
2.90
0.80
DIMENSIONS: MILLIMETERS
0.90
PITCH
3X
3X 0.95
RECOMMENDED
STYLE 28:
PIN 1. ANODE
2. ANODE
3. ANODE
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
98ASB42226B
DOCUMENT NUMBER:
DESCRIPTION:
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
PAGE 1 OF 1
SOT−23 (TO−236)
© Semiconductor Components Industries, LLC, 2019 www.onsemi.com
a a e lrademavks av Semxcunduclm Cnmvnnems In "sine \ghlsmanumhernlpalems \rademavks Dav www menu cumrsuerguwaxem Mavkmg gm 9 www nnserm cum
www.onsemi.com
1
ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
TECHNICAL SUPPORT
North American Technical Support:
Voice Mail: 1 800−282−9855 Toll Free USA/Canada
Phone: 011 421 33 790 2910
LITERATURE FULFILLMENT:
Email Requests to: orderlit@onsemi.com
ON Semiconductor Website: www.onsemi.com
Europe, Middle East and Africa Technical Support:
Phone: 00421 33 790 2910
For additional information, please contact your local Sales Representative
◊