NXP USA Inc. 的 PVR100AZ-B Series 规格书

规格书反馈/错误

founded by Phlhps

1. Product profile

1.1 General description

Integrated Zener diode and NPN bipolar transistor in one package.

1.2 Features

nIntegrated Zener diode and bipolar transistor

nOutput voltage options: 2.5 V, 3 V, 3.3 V, 5 V and 12 V

nOutput power dissipation capability: 1.3 W

nMedium power Surface-Mounted Device (SMD) plastic package

1.3 Applications

nLinear voltage regulation

1.4 Quick reference data

PVR100AZ-B series

Voltage regulator series

Rev. 01 — 16 November 2006 Product data sheet

Table 1. Product overview

Type number Package SOT457 complement

NXP JEITA

PVR100AZ-B2V5 SOT223 SC-73 PVR100AD-B2V5

PVR100AZ-B3V0 PVR100AD-B3V0

PVR100AZ-B3V3 PVR100AD-B3V3

PVR100AZ-B5V0 PVR100AD-B5V0

PVR100AZ-B12V PVR100AD-B12V

Table 2. Quick reference data

Symbol Parameter Conditions Min Typ Max Unit

NPN transistor

VCEO collector-emitter

voltage open base - - 45 V

ICcollector current - - 0.1 A

hFE DC current gain VCE =1V; I

C= 100 mA 160 - 400

Product data sheet Rev. 01 — 16 November 2006 2 of 17

NXP Semiconductors PVR100AZ-B series

Voltage regulator series

[1] Pulse test: tp≤300 µs; δ≤0.02.

Zener diode

VZworking voltage IZ=5mA

PVR100AZ-B2V5 3.23 3.3 3.37 V

PVR100AZ-B3V0 3.53 3.6 3.67 V

PVR100AZ-B3V3 3.82 3.9 3.98 V

PVR100AZ-B5V0 5.49 5.6 5.71 V

PVR100AZ-B12V 12.7 13 13.3 V

Voltage regulator

VOoutput voltage IO=10mA [1]

PVR100AZ-B2V5 VI= 4.5 V; Ictrl = 3.5 mA 2.25 2.5 2.75 V

PVR100AZ-B3V0 VI=5V; I

ctrl = 6.5 mA 2.7 3 3.3 V

PVR100AZ-B3V3 VI= 5.3 V; Ictrl = 6.5 mA 3.07 3.3 3.53 V

PVR100AZ-B5V0 VI=7V; I

ctrl = 10 mA 4.65 5 5.35 V

PVR100AZ-B12V VI=14V; I

ctrl = 5 mA 11.4 12.3 13.2 V

Line regulation

∆VO/VOrelative output voltage

variation IO=10mA [1]

PVR100AZ-B2V5 4.5 V ≤VI≤40 V; Ictrl = 3.5 mA −10 - +10 %

PVR100AZ-B3V0 5 V ≤VI≤40 V; Ictrl = 6.5 mA −10 - +10 %

PVR100AZ-B3V3 5.3 V ≤VI≤40 V; Ictrl = 6.5 mA −7 - +7 %

PVR100AZ-B5V0 7 V ≤VI≤40 V; Ictrl =10mA −7 - +7 %

PVR100AZ-B12V 14 V ≤VI≤40 V; Ictrl =5mA −7 - +7 %

Load regulation

∆VO/VOrelative output voltage

variation 5mA≤IO≤100 mA [1]

PVR100AZ-B2V5 VI= 4.5 V; Ictrl = 3.5 mA −10 - +10 %

PVR100AZ-B3V0 VI=5V; I

ctrl = 6.5 mA −10 - +10 %

PVR100AZ-B3V3 VI= 5.3 V; Ictrl = 6.5 mA −7 - +7 %

PVR100AZ-B5V0 VI=7V; I

ctrl =10mA −7 - +7 %

PVR100AZ-B12V VI=14V; I

ctrl =5mA −7 - +7 %

Table 2. Quick reference data

…continued

Symbol Parameter Conditions Min Typ Max Unit

HUM ARI

Product data sheet Rev. 01 — 16 November 2006 3 of 17

NXP Semiconductors PVR100AZ-B series

Voltage regulator series

2. Pinning information

3. Ordering information

4. Marking

Table 3. Pinning

Pin Symbol Description Simplified outline Symbol

1 REXT base

2 GND ground

3 VO output voltage

4 VI input voltage 132

006aaa695

TR1

132

Table 4. Ordering information

Type number Package

Name Description Version

PVR100AZ-B2V5 SC-73 plastic surface-mounted package with increased

heat sink; 4 leads SOT223

PVR100AZ-B3V0

PVR100AZ-B3V3

PVR100AZ-B5V0

PVR100AZ-B12V

Table 5. Marking codes

Type number Marking code

PVR100AZ-B2V5 AZ-B2V5

PVR100AZ-B3V0 AZ-B3V0

PVR100AZ-B3V3 AZ-B3V3

PVR100AZ-B5V0 AZ-B5V0

PVR100AZ-B12V AZ-B12V

Product data sheet Rev. 01 — 16 November 2006 4 of 17

NXP Semiconductors PVR100AZ-B series

Voltage regulator series

5. Limiting values

[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard

footprint.

[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm2.

[3] Device mounted on a ceramic PCB, Al2O3, standard footprint.

Table 6. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter Conditions Min Max Unit

NPN transistor

VCBO collector-base voltage open emitter - 50 V

VCEO collector-emitter voltage open base - 45 V

VEBO emitter-base voltage open collector - 5 V

ICcollector current - 0.1 A

ICM peak collector current single pulse;

tp≤1ms - 0.2 A

IBM peak base current single pulse;

tp≤1ms - 0.2 A

Ptot total power dissipation Tamb ≤25 °C[1] - 0.55 W

[2] - 1.2 W

[3] - 1.3 W

Zener diode

IFforward current - 200 mA

IZSM non-repetitive peak reverse

current VZ<6V - 6 A

VZ= 13 V - 2.5 A

Ptot total power dissipation Tamb ≤25 °C[1] - 0.15 W

Voltage regulator

Ptot total power dissipation Tamb ≤25 °C[1] - 0.65 W

[2] - 1.3 W

[3] - 1.5 W

Tjjunction temperature - 150 °C

Tamb ambient temperature −65 +150 °C

Tstg storage temperature −65 +150 °C

Product data sheet Rev. 01 — 16 November 2006 5 of 17

NXP Semiconductors PVR100AZ-B series

Voltage regulator series

6. Thermal characteristics

[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.

[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm2.

[3] Device mounted on a ceramic PCB, Al2O3, standard footprint.

(1) Ceramic PCB, Al2O3, standard footprint

(2) FR4 PCB, mounting pad for collector 6 cm2

(3) FR4 PCB, standard footprint

Fig 1. Power derating curves

Tamb (°C)

−75 17512525−25 75

006aaa844

0.8

0.4

1.2

1.6

Ptot

(W)

(3)

(2)

(1)

Table 7. Thermal characteristics

Symbol Parameter Conditions Min Typ Max Unit

NPN transistor

Rth(j-a) thermal resistance from

junction to ambient in free air [1] - - 227 K/W

[2] - - 104 K/W

[3] --96K/W

Rth(j-sp) thermal resistance from

junction to solder point --30K/W

Zener diode

Rth(j-a) thermal resistance from

junction to ambient in free air [1] - - 833 K/W

Voltage regulator

Rth(j-a) thermal resistance from

junction to ambient in free air [1] - - 192 K/W

[2] --96K/W

[3] --83K/W

Product data sheet Rev. 01 — 16 November 2006 6 of 17

NXP Semiconductors PVR100AZ-B series

Voltage regulator series

7. Characteristics

Table 8. Characteristics

amb

=25

C unless otherwise specified.

Symbol Parameter Conditions Min Typ Max Unit

NPN transistor

ICBO collector-base cut-off

current VCB =20V; I

E= 0 A - - 100 nA

VCB =20V;

IE= 0 A; Tj= 150 °C--5µA

IEBO emitter-base cut-off

current VEB =5V; I

C= 0 A - - 100 nA

hFE DC current gain VCE =1V;

IC= 100 mA 160 - 400

VBE base-emitter voltage VCE =1V;

IC=10mA - 0.72 - V

Zener diode

VFforward voltage IF= 10 mA - - 0.9 V

IRreverse current

PVR100AZ-B2V5 VR=1V - - 5 µA

PVR100AZ-B3V0 VR=1V - - 5 µA

PVR100AZ-B3V3 VR=1V - - 3 µA

PVR100AZ-B5V0 VR=2V - - 1 µA

PVR100AZ-B12V VR= 8 V - - 0.1 µA

VZworking voltage IZ=5mA

PVR100AZ-B2V5 3.23 3.3 3.37 V

PVR100AZ-B3V0 3.53 3.6 3.67 V

PVR100AZ-B3V3 3.82 3.9 3.98 V

PVR100AZ-B5V0 5.49 5.6 5.71 V

PVR100AZ-B12V 12.7 13 13.3 V

rdif differential resistance IZ=1mA

PVR100AZ-B2V5 - 350 600 Ω

PVR100AZ-B3V0 - 375 600 Ω

PVR100AZ-B3V3 - 400 600 Ω

PVR100AZ-B5V0 - 80 400 Ω

PVR100AZ-B12V - 50 170 Ω

rdif differential resistance IZ=5mA

PVR100AZ-B2V5 - 85 95 Ω

PVR100AZ-B3V0 - 85 90 Ω

PVR100AZ-B3V3 - 85 90 Ω

PVR100AZ-B5V0 - 15 40 Ω

PVR100AZ-B12V - 10 30 Ω

Product data sheet Rev. 01 — 16 November 2006 7 of 17

NXP Semiconductors PVR100AZ-B series

Voltage regulator series

SZtemperature

coefficient IZ=5mA

PVR100AZ-B2V5 −3.5 −2.4 0 mV/K

PVR100AZ-B3V0 −3.5 −2.4 0 mV/K

PVR100AZ-B3V3 −3.5 −2.5 0 mV/K

PVR100AZ-B5V0 −2 1.2 2.5 mV/K

PVR100AZ-B12V 7 9.4 11 mV/K

Voltage regulator

VOoutput voltage IO=10mA [1]

PVR100AZ-B2V5 VI= 4.5 V;

Ictrl = 3.5 mA 2.25 2.5 2.75 V

PVR100AZ-B3V0 VI=5V;

Ictrl = 6.5 mA 2.7 3 3.3 V

PVR100AZ-B3V3 VI= 5.3 V;

Ictrl = 6.5 mA 3.07 3.3 3.53 V

PVR100AZ-B5V0 VI=7V;

Ictrl =10mA 4.65 5 5.35 V

PVR100AZ-B12V VI=14V;

Ictrl =5mA 11.4 12.3 13.2 V

∆VO/(VO×∆Tamb) relative output voltage

variation over ambient

temperature

IO= 100 mA;

Tamb =−55 °Cto

150 °C

[1]

PVR100AZ-B2V5 VI= 4.5 V - 38 - 10−6/K

PVR100AZ-B3V0 VI=5V - −78 - 10−6/K

PVR100AZ-B3V3 VI= 5.3 V - −61 - 10−6/K

PVR100AZ-B5V0 VI= 7 V - 634 - 10−6/K

PVR100AZ-B12V VI=14V - 892 - 10

−6/K

Line regulation

∆VO/VOrelative output voltage

variation IO=10mA [1]

PVR100AZ-B2V5 4.5 V ≤VI≤40 V;

Ictrl = 3.5 mA −10 - +10 %

PVR100AZ-B3V0 5 V ≤VI≤40 V;

Ictrl = 6.5 mA −10 - +10 %

PVR100AZ-B3V3 5.3 V ≤VI≤40 V;

Ictrl = 6.5 mA −7 - +7 %

PVR100AZ-B5V0 7 V ≤VI≤40 V;

Ictrl =10mA −7 - +7 %

PVR100AZ-B12V 14 V ≤VI≤40 V;

Ictrl =5mA −7 - +7 %

Table 8. Characteristics

…continued

amb

=25

C unless otherwise specified.

Symbol Parameter Conditions Min Typ Max Unit

Product data sheet Rev. 01 — 16 November 2006 8 of 17

NXP Semiconductors PVR100AZ-B series

Voltage regulator series

[1] Pulse test: tp≤300 µs; δ≤0.02.

∆VO/(VO×∆VI) relative output voltage

variation over input

voltage

IO=10mA [1]

PVR100AZ-B2V5 4.5 V ≤VI≤40 V;

Ictrl = 3.5 mA - 100 - 10−6/V

PVR100AZ-B3V0 5 V ≤VI≤40 V;

Ictrl = 6.5 mA -80-10

−6/V

PVR100AZ-B3V3 5.3 V ≤VI≤40 V;

Ictrl = 6.5 mA -70-10

−6/V

PVR100AZ-B5V0 7 V ≤VI≤40 V;

Ictrl =10mA -40-10

−6/V

PVR100AZ-B12V 14 V ≤VI≤40 V;

Ictrl =5mA -20-10

−6/V

Load regulation

∆VO/VOrelative output voltage

variation 5mA≤IO≤100 mA [1]

PVR100AZ-B2V5 VI= 4.5 V;

Ictrl = 3.5 mA −10 - +10 %

PVR100AZ-B3V0 VI=5V;

Ictrl = 6.5 mA −10 - +10 %

PVR100AZ-B3V3 VI= 5.3 V;

Ictrl = 6.5 mA −7 - +7 %

PVR100AZ-B5V0 VI=7V;

Ictrl =10mA −7 - +7 %

PVR100AZ-B12V VI=14V;

Ictrl =5mA −7 - +7 %

∆VO/(VO×∆IO) relative output voltage

variation over output

current

5mA≤IO≤100 mA [1]

PVR100AZ-B2V5 VI= 4.5 V;

Ictrl = 3.5 mA -−840 - 10−6/mA

PVR100AZ-B3V0 VI=5V;

Ictrl = 6.5 mA -−630 - 10−6/mA

PVR100AZ-B3V3 VI= 5.3 V;

Ictrl = 6.5 mA -−540 - 10−6/mA

PVR100AZ-B5V0 VI=7V;

Ictrl =10mA -−320 - 10−6/mA

PVR100AZ-B12V VI=14V;

Ictrl =5mA -−130 - 10−6/mA

Table 8. Characteristics

…continued

amb

=25

C unless otherwise specified.

Symbol Parameter Conditions Min Typ Max Unit

Product data sheet Rev. 01 — 16 November 2006 9 of 17

NXP Semiconductors PVR100AZ-B series

Voltage regulator series

VCE =1V

(1) Tamb = 150 °C

(2) Tamb =25°C

(3) Tamb =−55 °C

Tamb =25°C

Fig 2. NPN transistor: DC current gain as a function

of collector current; typical values Fig 3. NPN transistor: Collector current as a function

of collector-emitter voltage; typical values

VCE =1V

(1) Tamb =−55 °C

(2) Tamb =25°C

(3) Tamb = 150 °C

Fig 4. NPN transistor: Base-emitter voltage as a function of collector current; typical values

006aaa845

200

400

600

hFE

IC (mA)

10−1103

102

110

(3)

(2)

(1)

006aaa846

VCE (V)

054231

0.4

0.8

1.2

(A)

IB (mA) = 13

11.7

10.4

9.1

7.8

2.6

1.3

3.9

5.2

6.5

006aaa848

0.4

0.8

1.2

VBE

(V)

IC (mA)

10−1103

102

110

(3)

(2)

(1)

Product data sheet Rev. 01 — 16 November 2006 10 of 17

NXP Semiconductors PVR100AZ-B series

Voltage regulator series

Tj=25°C to 150 °CT

j=25°C to 150 °C

Fig 5. Zener diode: Temperature coefficient as a

function of working current; typical values Fig 6. Zener diode: Temperature coefficient as a

function of working current; typical values

006aaa853

IZ (mA)

0604020

−1

−2

(mV/K)

−3

3.9

3.6

3.3

2.4

2.7

VZ (V) = 4.3

IZ (mA)

020168124

006aaa854

(mV/K)

−5

VZ (V) = 12

7.5

6.8 6.2

5.6

5.1

4.7

9.1

8.2

/V / ///I )//

Product data sheet Rev. 01 — 16 November 2006 11 of 17

NXP Semiconductors PVR100AZ-B series

Voltage regulator series

VI=V

O(typ) +2V; I

O= 100 mA;

Tamb =−55 °C to 150 °C

(1) PVR100AZ-B12V

(2) PVR100AZ-B5V0

(3) PVR100AZ-B3V3

(4) PVR100AZ-B3V0

(5) PVR100AZ-B2V5

Tamb =25°C; IO=10mA

(1) PVR100AZ-B12V; Ictrl =5mA

(2) PVR100AZ-B3V3; Ictrl = 6.5 mA

(3) PVR100AZ-B3V0; Ictrl = 6.5 mA

(4) PVR100AZ-B2V5; Ictrl = 3.5 mA

(5) PVR100AZ-B5V0; Ictrl =10mA

Fig 7. Voltage regulator: Output voltage variation as a

function of ambient temperature; typical values Fig 8. Voltage regulator: Output voltage variation as a

function of input voltage; typical values

Tamb =25°C; VI=V

O(typ) +2V

(1) PVR100AZ-B12V; Ictrl =5mA

(2) PVR100AZ-B3V3; Ictrl = 6.5 mA

(3) PVR100AZ-B3V0; Ictrl = 6.5 mA

(4) PVR100AZ-B2V5; Ictrl = 3.5 mA

(5) PVR100AZ-B5V0; Ictrl =10mA

Fig 9. Voltage regulator: Output voltage variation as a function of output current; typical values

006aaa849

Tamb (°C)

−60 15012090−30 30 600

0.5

−0.5

1.0

1.5

∆VO

(V)

−1.0

(3) (4)

(5)

(2)

(1)

006aaa850

VI (V)

5403510 15 20 25 30

−0.05

0.05

0.10

∆VO

(V)

−0.10

(3)

(4)

(5)

(2)

(1)

IO (mA)

0 1008040 6020

006aaa851

−0.1

0.1

0.2

∆VO

(V)

−0.2

(4)

(5)

(2)

(1)

(3)

$0 J ZS rm 04>

Product data sheet Rev. 01 — 16 November 2006 12 of 17

NXP Semiconductors PVR100AZ-B series

Voltage regulator series

8. Test information

9. Package outline

Fig 10. Voltage regulator test setup

006aaa693

VI I2 VO

I1 TR1

Fig 11. Package outline SOT223 (SC-73)

04-11-10Dimensions in mm

6.7

6.3

3.1

2.9

1.8

1.5

7.3

6.7 3.7

3.3

1.1

0.7

132

4.6

2.3 0.8

0.6 0.32

0.22

The indicated -xxx are the last three digits of the 12NC ordering cede,

Product data sheet Rev. 01 — 16 November 2006 13 of 17

NXP Semiconductors PVR100AZ-B series

Voltage regulator series

10. Packing information

[1] For further information and the availability of packing methods, see Section 14.

11. Soldering

Table 9. Packing methods

The indicated -xxx are the last three digits of the 12NC ordering code.

[1]

Type number Package Description Packing quantity

1000 4000

PVR100AZ-B2V5 SOT223 8 mm pitch, 12 mm tape and reel -115 -135

PVR100AZ-B3V0

PVR100AZ-B3V3

PVR100AZ-B5V0

PVR100AZ-B12V

Fig 12. Reflow soldering footprint SOT223 (SC-73)

sot223_fr

solder resist

occupied areasolder lands

solder paste Dimensions in mm

1.20

(4 ×)

3.90

5.90

4.80

7.40

231

3.85

1.20 (3 ×)

1.30 (3 ×)

0.30

3.60

3.50

7.00

6.15

7.65

Product data sheet Rev. 01 — 16 November 2006 14 of 17

NXP Semiconductors PVR100AZ-B series

Voltage regulator series

Fig 13. Wave soldering footprint SOT223 (SC-73)

sot223_fw

solder resistoccupied areasolder lands Dimensions in mm

transport direction during soldering

6.70

8.90

1.90 (2×)1.10

7.30

4.30 8.10 8.70

123

Product data sheet Rev. 01 — 16 November 2006 15 of 17

NXP Semiconductors PVR100AZ-B series

Voltage regulator series

12. Revision history

Table 10. Revision history

Document ID Release date Data sheet status Change notice Supersedes

PVR100AZ-B_SER_1 20061116 Product data sheet - -

Product data sheet Rev. 01 — 16 November 2006 16 of 17

NXP Semiconductors PVR100AZ-B series

Voltage regulator series

13. Legal information

13.1 Data sheet status

[1] Please consult the most recently issued document before initiating or completing a design.

[2] The term ‘short data sheet’ is explained in section “Definitions”.

[3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status

information is available on the Internet at URL http://www.nxp.com.

13.2 Definitions

Draft — The document is a draft version only. The content is still under

internal review and subject to formal approval, which may result in

modifications or additions. NXP Semiconductors does not give any

representations or warranties as to the accuracy or completeness of

information included herein and shall have no liability for the consequences of

use of such information.

Short data sheet — A short data sheet is an extract from a full data sheet

with the same product type number(s) and title. A short data sheet is intended

for quick reference only and should not be relied upon to contain detailed and

full information. For detailed and full information see the relevant full data

sheet, which is available on request via the local NXP Semiconductors sales

office. In case of any inconsistency or conflict with the short data sheet, the

full data sheet shall prevail.

13.3 Disclaimers

General — Information in this document is believed to be accurate and

reliable. However, NXP Semiconductors does not give any representations or

warranties, expressed or implied, as to the accuracy or completeness of such

information and shall have no liability for the consequences of use of such

information.

Right to make changes — NXP Semiconductors reserves the right to make

changes to information published in this document, including without

limitation specifications and product descriptions, at any time and without

notice. This document supersedes and replaces all information supplied prior

to the publication hereof.

Suitability for use — NXP Semiconductors products are not designed,

authorized or warranted to be suitable for use in medical, military, aircraft,

space or life support equipment, nor in applications where failure or

malfunction of a NXP Semiconductors product can reasonably be expected to

result in personal injury, death or severe property or environmental damage.

NXP Semiconductors accepts no liability for inclusion and/or use of NXP

Semiconductors products in such equipment or applications and therefore

such inclusion and/or use is at the customer’s own risk.

Applications — Applications that are described herein for any of these

products are for illustrative purposes only. NXP Semiconductors makes no

representation or warranty that such applications will be suitable for the

specified use without further testing or modification.

Limiting values — Stress above one or more limiting values (as defined in

the Absolute Maximum Ratings System of IEC 60134) may cause permanent

damage to the device. Limiting values are stress ratings only and operation of

the device at these or any other conditions above those given in the

Characteristics sections of this document is not implied. Exposure to limiting

values for extended periods may affect device reliability.

Terms and conditions of sale — NXP Semiconductors products are sold

subject to the general terms and conditions of commercial sale, as published

at http://www.nxp.com/profile/terms, including those pertaining to warranty,

intellectual property rights infringement and limitation of liability, unless

explicitly otherwise agreed to in writing by NXP Semiconductors. In case of

any inconsistency or conflict between information in this document and such

terms and conditions, the latter will prevail.

No offer to sell or license — Nothing in this document may be interpreted

or construed as an offer to sell products that is open for acceptance or the

grant, conveyance or implication of any license under any copyrights, patents

or other industrial or intellectual property rights.

13.4 Trademarks

Notice: All referenced brands, product names, service names and trademarks

are the property of their respective owners.

14. Contact information

For additional information, please visit: http://www.nxp.com

For sales office addresses, send an email to: salesaddresses@nxp.com

Document status[1][2] Product status[3] Definition

Objective [short] data sheet Development This document contains data from the objective specification for product development.

Preliminary [short] data sheet Qualification This document contains data from the preliminary specification.

Product [short] data sheet Production This document contains the product specification.

founded by PHILIPS

NXP Semiconductors PVR100AZ-B series

Voltage regulator series

For more information, please visit: http://www.nxp.com

For sales office addresses, please send an email to: salesaddresses@nxp.com

Date of release: 16 November 2006

Document identifier: PVR100AZ-B_SER_1

Please be aware that important notices concerning this document and the product(s)

described herein, have been included in section ‘Legal information’.

15. Contents

1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.1 General description. . . . . . . . . . . . . . . . . . . . . . 1

1.2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.4 Quick reference data. . . . . . . . . . . . . . . . . . . . . 1

2 Pinning information. . . . . . . . . . . . . . . . . . . . . . 3

3 Ordering information . . . . . . . . . . . . . . . . . . . . . 3

4 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3

5 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 4

6 Thermal characteristics. . . . . . . . . . . . . . . . . . . 5

7 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 6

8 Test information. . . . . . . . . . . . . . . . . . . . . . . . 12

9 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 12

10 Packing information. . . . . . . . . . . . . . . . . . . . . 13

11 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13

12 Revision history. . . . . . . . . . . . . . . . . . . . . . . . 15

13 Legal information. . . . . . . . . . . . . . . . . . . . . . . 16

13.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 16

13.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 16

13.3 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 16

13.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 16

14 Contact information. . . . . . . . . . . . . . . . . . . . . 16

15 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17

NXP USA Inc. 的 PVR100AZ-B Series 规格书

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