Infineon Technologies 的 ESD5V0S1U-02V 规格书

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Data Sheet
Revision 1.1, 2012-05-31
Final
ESD5V0S1U-02V
Uni-directional ESD / Transient Protection Diode
ESD5V0S1U-02V
TVS Diodes
Transient Voltage Suppressor Diodes
Edition 2012-05-31
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2012 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
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characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any
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and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights
of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please contact the nearest
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devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain
and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may
be endangered.
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ESD5V0S1U-02V
Final Data Sheet 3 Revision 1.1, 2012-05-31
Trademarks of Infineon Technologies AG
AURIX™, BlueMoon™, C166™, CanPAK™, CIPOS™, CIPURSE™, COMNEON™, EconoPACK™, CoolMOS™,
CoolSET™, CORECONTROL™, CROSSAVE™, DAVE™, EasyPIM™, EconoBRIDGE™, EconoDUAL™,
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MIPAQ™, ModSTACK™, my-d™, NovalithIC™, OmniTune™, OptiMOS™, ORIGA™, PRIMARION™,
PrimePACK™, PrimeSTACK™, PRO-SIL™, PROFET™, RASIC™, ReverSave™, SatRIC™, SIEGET™,
SINDRION™, SIPMOS™, SMARTi™, SmartLEWIS™, SOLID FLASH™, TEMPFET™, thinQ!™,
TRENCHSTOP™, TriCore™, X-GOLD™, X-PMU™, XMM™, XPOSYS™.
Other Trademarks
Advance Design System™ (ADS) of Agilent Technologies, AMBA™, ARM™, MULTI-ICE™, KEIL™,
PRIMECELL™, REALVIEW™, THUMB™, µVision™ of ARM Limited, UK. AUTOSAR™ is licensed by AUTOSAR
development partnership. Bluetooth™ of Bluetooth SIG Inc. CAT-iq™ of DECT Forum. COLOSSUS™,
FirstGPS™ of Trimble Navigation Ltd. EMV™ of EMVCo, LLC (Visa Holdings Inc.). EPCOS™ of Epcos AG.
FLEXGO™ of Microsoft Corporation. FlexRay™ is licensed by FlexRay Consortium. HYPERTERMINAL™ of
Hilgraeve Incorporated. IEC™ of Commission Electrotechnique Internationale. IrDA™ of Infrared Data
Association Corporation. ISO™ of INTERNATIONAL ORGANIZATION FOR STANDARDIZATION. MATLAB™ of
MathWorks, Inc. MAXIM™ of Maxim Integrated Products, Inc. MICROTEC™, NUCLEUS™ of Mentor Graphics
Corporation. Mifare™ of NXP. MIPI™ of MIPI Alliance, Inc. MIPS™ of MIPS Technologies, Inc., USA. muRata™
of MURATA MANUFACTURING CO., MICROWAVE OFFICE™ (MWO) of Applied Wave Research Inc.,
OmniVision™ of OmniVision Technologies, Inc. Openwave™ Openwave Systems Inc. RED HAT™ Red Hat, Inc.
RFMD™ RF Micro Devices, Inc. SIRIUS™ of Sirius Satellite Radio Inc. SOLARIS™ of Sun Microsystems, Inc.
SPANSION™ of Spansion LLC Ltd. Symbian™ of Symbian Software Limited. TAIYO YUDEN™ of Taiyo Yuden
Co. TEAKLITE™ of CEVA, Inc. TEKTRONIX™ of Tektronix Inc. TOKO™ of TOKO KABUSHIKI KAISHA TA.
UNIX™ of X/Open Company Limited. VERILOG™, PALLADIUM™ of Cadence Design Systems, Inc. VLYNQ™
of Texas Instruments Incorporated. VXWORKS™, WIND RIVER™ of WIND RIVER SYSTEMS, INC. ZETEX™ of
Diodes Zetex Limited.
Last Trademarks Update 2010-10-26
Revision History: Rev. 1.0, 2011-02-21
Page or Item Subjects (major changes since previous revision)
Revision 1.1, 2012-05-31
Page 8 Table 3 updated
infineon
ESD5V0S1U-02V
Table of Contents
Final Data Sheet 4 Revision 1.1, 2012-05-31
Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
1 Uni-directional ESD / Transient Protection Diode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
1.1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
1.2 Application Examples . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
2 Product Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
3 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
3.1 Electrical Characteristics at TA=25°C, unless otherwise specified . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
3.2 Typical Performance characteristics at TA = 25 °C, unless otherwise specified . . . . . . . . . . . . . . . . . 8
4 Application Information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
5 Ordering information scheme (examples) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
6 Package Information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
6.1 SC79 Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
7 Date Code Marking for SC79 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
References . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Terminology . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Table of Contents
infineon
ESD5V0S1U-02V
Uni-directional ESD / Transient Protection Diode
Final Data Sheet 5 Revision 1.1, 2012-05-31
1 Uni-directional ESD / Transient Protection Diode
1.1 Features
ESD / transient protection according to:
IEC61000-4-2 (ESD): ±25 kV (air) 20 kV (contact)
IEC61000-4-4 (EFT): 50 A / 2.5 kV (5/50 ns)
IEC61000-4-5 (surge): 5.5 A / 66 W (8/20 μs)
Uni-directional, working voltage: VRWM = 5 V
Ultra low clamping voltage, protects against both positive and negative ESD strikes
Ultra low dynamic resistance: RDYN down to 0.2
Very fast response time
Pb-free (RoHS compliant) and halogen free package
1.2 Application Examples
Notebooks, computers and consumer electronics
Industrial applications, white goods, portable instrumentation
Mobile communication
2 Product Description
Figure 1 Pin configuration and schematic diagram
Table 1 Ordering information
Type Package Configuration Marking code
ESD5V0S1U-02V SC79 1 line, uni-directional U
b) Schematic diagrama) Pin configuration
Pin 2
Pin 1
Pin 1 Pin 2
PG -SC79 -2-1
PG-SC79-2- 1_PinConf_and_SchematicDiag_[1].vsd
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ESD5V0S1U-02V
Characteristics
Final Data Sheet 6 Revision 1.1, 2012-05-31
3 Characteristics
3.1 Electrical Characteristics at TA=25°C, unless otherwise specified
Figure 2 Definitions of electrical characteristics
Table 2 Maximum Rating at TA = 25 °C, unless otherwise specified
Parameter Symbol Values Unit
Min. Typ. Max.
ESD air discharge1)
1) VESD according to IEC61000-4-2
VESD -25 – 25 kV
ESD contact discharge1) VESD -20 – 20 kV
Peak pulse current (tp = 8/20 μs)2)
2) IPP according to IEC61000-4-5
IPP -5.5 – 5.5 A
Peak pulse power (tp = 8/20 μs)2) PPk ––66W
Operating temperature range TOP -55 125 °C
Storage temperature Tstg -65 150 °C
Table 3 DC characteristics at TA = 25 °C, unless otherwise specified
Parameter Symbol Values Unit Note /
Test Condition
Min. Typ. Max.
Reverse working voltage VRWM ––5V
Breakdown voltage VBR 5.7 6.5 7.5 V IR = 1 mA
Reverse current IR––0.1μAVR = 3.3 V
Diode_ Charact eristic_Curve_Uni-direct ional .vsd
V
F
RDYN
: Differential series resistance
VBR: Breakdown voltage (IBR=1mA, typical)
VRWM: Maximum working voltage
VCL: Clamping voltage
VFC: Forward clamping voltage
IPP: Peak pulse current (tp= 8 / 20 µs)
V
FC
I
F
V
RWM
V
F
V
R
V
BR
V
CL
I
R
I
F
I
PP
I
PP
I
R
V
R
V
F
I
RWM
R
DYN
R
DYN
VF: Forward voltage
IF: Forward current
VR: Reverse voltage
IR: Reverse current
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ESD5V0S1U-02V
Characteristics
Final Data Sheet 7 Revision 1.1, 2012-05-31
Table 4 RF characteristics at TA = 25 °C, unless otherwise specified
Parameter Symbol Values Unit Note /
Test Condition
Min. Typ. Max.
Diode capacitance CL–3540pFVR = 0 V, f = 1 MHz
Diode capacitance CL–20–pFVR = 2.5 V, f = 1 MHz
Table 5 ESD characteristics at TA = 25 °C, unless otherwise specified
Parameter Symbol Values Unit Note /
Test Condition
Min. Typ. Max.
Clamping voltage1)
1)According TLP tests. Please refer to Application Note AN-210 [1]
VCL –7.6–VIpp = 5 A,
tp = 30 ns, pin 1-2
Clamping voltage1) VCL –10.5–VIpp = 16 A,
tp = 30 ns, pin 1-2
Clamping voltage1) VCL –14.5–VIpp = 30 A,
tp = 30 ns, pin 1-2
Forward clamping
voltage1)
VFC –2–VIpp = 5 A,
tp = 30 ns, pin 2-1
Forward clamping
voltage1)
VFC –4.3–VIpp = 16 A,
tp = 30 ns, pin 2-1
Forward clamping
voltage1)
VFC –7.3–VIpp = 30 A,
tp = 30 ns, pin 2-1
Dynamic resistance1) RDYN –0.2tp =30 ns, pin 2-1
Dynamic resistance1) RDYN –0.3tp =30 ns, pin 1-2
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ESD5V0S1U-02V
Characteristics
Final Data Sheet 8 Revision 1.1, 2012-05-31
3.2 Typical Performance characteristics at TA = 25 °C, unless otherwise specified
Figure 3 Capacitance characteristics: CL = f(VR) - f = 1 MHz
Figure 4 Reverse characteristics: IR = f(TA) - VR = 3.3 V
0
5
10
15
20
25
30
35
40
0 1 2 3 4 5 6
CL [pF]
VR [V]
10-9
10-8
10-7
10-6
25 50 75 100 125 150
IR [A]
TA [°C]
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ESD5V0S1U-02V
Characteristics
Final Data Sheet 9 Revision 1.1, 2012-05-31
Figure 5 Forward TLP characteristics (Pin 2 to 1)
Figure 6 Reverse TLP characteristics (Pin 1 to 2)
0
10
20
30
40
50
60
0 5 10 15
0
5
10
15
20
25
30
ITLP [A]
Equivalent VIEC [kV]
VTLP [V]
ESD5V0S1U-02V - Pin 2 to 1
RDYN
RDYN=0.2Ω
0
10
20
30
40
50
60
0 5 10 15 20 25
0
5
10
15
20
25
30
ITLP [A]
Equivalent VIEC [kV]
VTLP [V]
ESD5V0S1U-02V - Pin1 to 2
RDYN
RDYN=0.3Ω
infineon
ESD5V0S1U-02V
Application Information
Final Data Sheet 10 Revision 1.1, 2012-05-31
4 Application Information
Figure 7 Single Channel, uni-directional ESD / Transient protection
Application _ESD5V0 S1U-02V .vsd
1
2
The protection diode should be placed
ver y close to the location where the
ESD can occur to keep loops and
inductances as small as possible .
Connector
ESD sensitive
device
I/O
Protected signal line
infineon T
ESD5V0S1U-02V
Ordering information scheme (examples)
Final Data Sheet 11 Revision 1.1, 2012-05-31
5 Ordering information scheme (examples)
Figure 8 Ordering Information Scheme
ESD 5V3 U- XX YY
Package or Application
XX = Pin number (i.e.: 02 = 2 pins; 03 = 3 pins)
YY = Package family:
LS = TSSLP
LRH = TSLP
S = SOT363
U = SC74
XX = Application family:
LC = Low Clamp
HDMI
Uni- / Bi-directional or Rail to Rail protection
Maximum working voltage V
RWM
in V: (i.e.: 5V3 = 5.3V)
ESD 0P1 RF - XX YY
Package
XX = Pin number (i.e.: 02 = 2 pins; 03 = 3 pins)
YY = Package family:
LS = TSSLP
LRH = TSLP
For Radio Frequency Applications
Line Capacitance C
L
in pF: (i.e.: 0P1 = 0.1pF)
n U
Number of protected lines (i.e.: 1 = 1 line; 4 = 4 lines)
Capacitance: Standard (>10pF), Low (<10pF), Ultra-low (<1pF)
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ESD5V0S1U-02V
Package Information
Final Data Sheet 12 Revision 1.1, 2012-05-31
6 Package Information
6.1 SC79 Package
Figure 9 SC79: Package outline (dimension in mm)
Figure 10 SC79: Footprint (dimension in mm)
Figure 11 SC79: Packing (dimension in mm)
Figure 12 SC79: Marking (example)
SC79-PO V02
±0.1
1.6
0.3
1
2
marking
Cathode
0.8
±0.1
±0.1
1.2
A
±0.05
0.13
A0.2 M
+0.05
-0.03
±0.04
0.55
±0.05
0.2
SC79-FP V02
0.35
0.35
1.35
SC79-TP V05
2
0.66
0.93
0.4
1.33
1.96
8
0.2
Cathode
marking
4
Cathode
marking
Standard Reel with 2 mm Pitch
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ESD5V0S1U-02V
Date Code Marking for SC79
Final Data Sheet 13 Revision 1.1, 2012-05-31
7 Date Code Marking for SC79
Figure 13 Date Code marking for SC79 packages
one digit (SCD80, SC79, SC75
1)
) CES-Code
Month 2003 2004 2005 2006 2007 2008 2009 2010 2011 2012 2013 2014
01apAPapAPapAP
02bqBQbqBQbqBQ
03crCRcrCRcrCR
04d sDSd sDSd sDS
05e t ETe t ETet ET
06fuFUfuFUfuFU
07gvGVgvGVgvGV
08hxHXh xHXhxHX
09jyJYjyJYjyJY
10k zKZk zKZk zKZ
11l 2L4 l 2L4 l 2L4
12n3N5n3N5n3N5
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ESD5V0S1U-02V
References
Final Data Sheet 14 Revision 1.1, 2012-05-31
References
[1] Infineon AG - Application Note AN210: Effective ESD Protection Design at System Level Using VF-TLP
Characterization Methodology
infineon
ESD5V0S1U-02V
Terminology
Final Data Sheet 15 Revision 1.1, 2012-05-31
Terminology
CES Charactere Encoding Scheme
CLLine capacitance
EFT Electrical Fast Transient
ESD Electrostatic Discharge
Ipp Peak pulse current
IRReverse current
RoHs Restriction of Hazardous Substance Directive
TAAmbient Temperature
TOP Operation temperature
tpPulse duration
Tstg Storage temperature
VCL Reverse clamping voltage
VESD Electrostatic discharge voltage
VFC Forward Clamping Voltage
VRReverse voltage
VRWM Reverse working voltage maximum
VBR Breakdown voltage
RDYN Dynamic resistance
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