NXP USA Inc. 的 KMI18/2 T/R 规格书

Philips Semiconductors PHILIPS
DATA SHEET
Preliminary specification 2000 Sep 05
DISCRETE SEMICONDUCTORS
KMI18/2
Integrated rotational speed sensor
2000 Sep 05 2
Philips Semiconductors Preliminary specification
Integrated rotational speed sensor KMI18/2
FEATURES
•Open collector output
•For active target wheel application
•Wide air gap
•Zero speed capability
•Wide temperature range
•Insensitive to vibration.
DESCRIPTION
The KMI18/2 sensor detects rotational speed of active
target wheels with magnetic reference marks.
It consists of a magnetoresistive sensor element, an
integrated circuit for signal conditioning and a ferrite
magnet.
The frequency of the digital voltage output signal is
proportional to the rotational speed of the target wheel.
An open collector output gives high flexibility in the design
of the subsequent signal conditioning electronics.
PINNING
CAUTION
Do not press two or more products together against their
magnetic forces. Do not expose products to strong
magnetic fields of more than 30 kA/m.
PIN SYMBOL DESCRIPTION
1V
CC DC supply voltage
2 OUT open collector output
3 GND ground
handbook, halfpage
MBL224
123
B1
B2
B3
B4
123
Fig.1 Simplified outline (SOT477A).
QUICK REFERENCE DATA
Note
1. Maximum power consumption according to power derating curve, see Fig.3.
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
VCC DC supply voltage Tamb =−40 to +150 °C 4.5 5 16.5 V
ICC DC supply current VCC =5V 6 7 10 mA
H
yLH magnetic threshold for LH edge 100 250 400 A/m
HyHL magnetic threshold for HL edge −400 −250 −100 A/m
Tamb ambient operating temperature VCC = 5 V; note 1 −40 −+150 °C
2000 Sep 05 3
Philips Semiconductors Preliminary specification
Integrated rotational speed sensor KMI18/2
LIMITING VALUES
In accordance with Absolute Maximum Rating System (IEC 60134); Tamb =−40 to +150 °C; see Fig.4.
Notes
1. Low: transistor open (VCE < 1 V).
2. High: transistor closed (VCE > 4 V).
CHARACTERISTICS
Tamb =26±10 °C; VCC =5V; f
rm = 0 to 25000 Hz; magnetic reading point according to ‘Package outline’; unless
otherwise specified.
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VCC DC supply voltage not protected against incorrect polarity −0.5 +16.5 V
VOUT output voltage not protected against incorrect polarity −0.5 +24 V
IOUT(max) maximum output current low state; note 1 −20 mA
IOUT(high) output leakage current high state; note 2; see Fig.5 −100 µA
high state; note 2; see Fig.6 −100 µA
Ptot total power dissipation VCC = 16.5 V; IOUT =20mA −300 mW
Tamb ambient operating temperature VCC =5V −40 +150 °C
Tstg storage temperature −40 +150 °C
Tsld soldering temperature t ≤10 s −260 °C
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
Sensor characteristics
HyLH magnetic trigger field strength
(threshold) for LH-output edge
Tamb =25°C 100 250 400 A/m
Tamb =−40 to +150 °C−200 +250 +600 A/m
HyHL magnetic trigger field strength
(threshold) for HL-output edge
Tamb =25°C−400 −250 −100 A/m
Tamb =−40 to +150 °C−600 −250 +200 A/m
Hy0 magnetic offset −150 −+150 A/m
Hyh magnetic trigger hysteresis 100 500 700 A/m
Hxauxiliary magnetic field strength 5 8 10 kA/m
frm frequency of magnetic reference
marks
0−25000 Hz
Supply conditions
ICC DC supply current Tamb =26±10 °C;
VCC =5V
6.5 7.5 8.5 mA
Tamb =−40 to +150 °C;
VCC =5V
6710mA
V
CC DC supply voltage Tamb =−40 to +150 °C 4.5 5 16.5 V
Signal output characteristics
transfer behaviour change of magnetic
reference field Hy
NS →HL
SN →LH
power-on state undefined
IOUT output current low state; note 1 0.1 −20 mA
2000 Sep 05 4
Philips Semiconductors Preliminary specification
Integrated rotational speed sensor KMI18/2
Notes
1. Low: transistor open (VCE < 1 V).
2. High: transistor closed (VCE > 4 V).
3. Higher magnetic fields could cause irreversible shifts of parameters.
4. Output pins are designed for electrostatic sensitivity with field strengths up to 2 kV according to Human Body
Model (HBM), MIL-STD-883, Method 3015.
5. MR pins are designed for electrostatic sensitivity with field strengths up to 0.3 V according to Human Body
Model (HBM), MIL-STD-883, Method 3015.
IOUT(high) output leakage current high state; note 2;
see Fig.6
−−100 µA
VOUT output saturation voltage Tamb =−40 to +150 °C;
low state; note 1
IOUT = 1 mA 0.01 0.03 0.1 V
IOUT = 10 mA 0.1 0.2 0.5 V
IOUT = 20 mA 0.3 0.5 1 V
tr(OUT) output signal rise time low 10% to high 90%;
see Fig.7
51220µs
t
f(OUT) output signal fall time high 90% to low 10%;
see Fig.7
0.05 0.5 1 µs
tdf(OUT) output signal delay time of HL-edge 1.5 2.5 3.5 µs
dtdf(OUT) jitter measured in harmonic
magnetic field in y with
Hy(max) = 1 kA/m;
normalized to cycle of
one reference mark
0−0.15 %
Environmental conditions
external magnetic influence note 3 −−30 kA/m
ESD protection of sensor pins VCC,
OUT and GND
compliance to
IEC 0801-2 (IV); note 4
2−−kV
ESD protection of internal
pins B1, B2, B3 and B4
compliance to
IEC 0801-2 (IV); note 5
0.3 −−kV
EMC: compliance to ISO 11452-5 A; stripline; 300 V/m;
10 kHz to 400 MHz;
1500 mm
interference for pulse: ISO 7637;
pulse 4
T=25°C; harmonic
magnetic field in y with
Hy(max) = 1 kA/m and
fm=50Hz
function A
Capacity of sensor shield
CSshield capacity B1 vs. B2 of MR bridge;
f = 1 MHz; Uosc = 200 mV
37 43 48 pF
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
2000 Sep 05 5
Philips Semiconductors Preliminary specification
Integrated rotational speed sensor KMI18/2
FUNCTIONAL DESCRIPTION
The KMI18/2 is sensitive to the rotation of an active target
wheel with magnetic reference marks. The functional
principle is shown in Fig.8. Because of the sensor layout
and setup of the measuring system, only movements of
reference marks in the y-direction will be sensed
(coordinate system see Fig.2).
The electrical output signal of the sensor is amplified,
temperature compensated and applied to a Schmitt trigger
in the signal conditioning circuit (see Fig.9). An additional
housing separates the conditioning circuitry from the
magnetorestive sensor element, thereby ensuring optimal
sensor performance at high temperatures.
The signal level of the digital output is independent from
the sensing distance within the measuring range. Its
frequency equals that of the reference marks on the target
wheels(1).
An open collector voltage interface ensures accurate
transmission (three wires) of the digital sensor signal to the
subsequent signal conditioning electronics.
(1) See relevant application notes for specific target wheel data.
handbook, halfpage
yz
xx
IC
sensor
magnet with
direction of
magnetization
MBL227
123
Fig.2 Component detail and coordinate system.
2000 Sep 05 6
Philips Semiconductors Preliminary specification
Integrated rotational speed sensor KMI18/2
handbook, halfpage
0 50 100 200
Tamb (°C)
400
300
Ptot
(mW)
100
0
200
150
MBL226
Fig.3 Power derating curve.
handbook, halfpage
MBL218
SENSOR
ICC
VCC
IOUT
VOUT
Fig.4 Supply and output.
handbook, halfpage
MBL219
SENSOR
VCC
VCC
VOUT
V
IOUT
Fig.5 Leakage current test circuit: VCC to OUT.
handbook, halfpage
MBL220
SENSOR
VCC
VOUT
5 V24 V V V
IOUT
Fig.6 Leakage current test circuit: OUT to GND.
4f,,, %,,, 4v,,, :0; 11; ”1 CI f!"\/W\/"\/W\/fi\ —|_l—|_l—|_l'
2000 Sep 05 7
Philips Semiconductors Preliminary specification
Integrated rotational speed sensor KMI18/2
handbook, halfpage
MBL225
2.7 kΩ
10 kΩ
2 nF
SENSOR
VCC
VOUT
ICC
Fig.7 Test and application circuit with
additional ceramic capacitor.
handbook, full pagewidth
N
output
signal
moving direction of the sensor
magnetized
target S
MBL236
SNNSSNNS
y
z
Fig.8 Functional principle.
2000 Sep 05 8
Philips Semiconductors Preliminary specification
Integrated rotational speed sensor KMI18/2
handbook, full pagewidth
SCHMITT
TRIGGER
AMPLIFIERSENSOR
VOLTAGE CONTROL VCC
GND
OUT
open collector
output
MGT539
Fig.9 Block diagram.
$ # W7+
2000 Sep 05 9
Philips Semiconductors Preliminary specification
Integrated rotational speed sensor KMI18/2
PACKAGE OUTLINE
UNIT bpc QL2
L1v
REFERENCES
OUTLINE
VERSION EUROPEAN
PROJECTION ISSUE DATE
IEC JEDEC EIAJ
mm 1.7
1.4 0.8
0.7
bp1
1.57
1.47 5.7
5.5
4.1
3.9
0.3
0.24 1.2
0.9 3.9
3.5
M1
3.9
3.7
M2
2.1
1.9
M3(1)
0.9
0.75
L
7.55
7.25
D(2) D1(2)
4.5
4.3
E(2)
5.7
5.5 4.6
4.4
E1(2)
18.2
17.8
HE
5.6
5.5
HE1 K
max.
1.67
e
2.35
2.15
e1
0.25
0.75
0.65
DIMENSIONS (mm are the original dimensions)
SOT477A 00-08-31
0 2.5 5 mm
scale
A(1)
Plastic single-ended multi-chip package;
magnetized ferrite magnet (3.8 x 2 x 0.8 mm); 4 interconnections; 3 in-line leads SOT477A
E
E1
HE1
L1
D
L
bp1
D1
HE
M1
M3K
Notes
1. Glue thickness not included.
2. Plastic or metal protrusions of 0.15 mm maximum per side are not included.
c
vMAB
vMAB
Q
A
M
2
B
A
SENSOR DIE POSITION
* centre of reading point
e
123
e
1
L
2
b
p
2000 Sep 05 10
Philips Semiconductors Preliminary specification
Integrated rotational speed sensor KMI18/2
DATA SHEET STATUS
Note
1. Please consult the most recently issued data sheet before initiating or completing a design.
DATA SHEET STATUS PRODUCT
STATUS DEFINITIONS (1)
Objective specification Development This data sheet contains the design target or goal specifications for
product development. Specification may change in any manner without
notice.
Preliminary specification Qualification This data sheet contains preliminary data, and supplementary data will be
published at a later date. Philips Semiconductors reserves the right to
make changes at any time without notice in order to improve design and
supply the best possible product.
Product specification Production This data sheet contains final specifications. Philips Semiconductors
reserves the right to make changes at any time without notice in order to
improve design and supply the best possible product.
DEFINITIONS
Short-form specification The data in a short-form
specification is extracted from a full data sheet with the
same type number and title. For detailed information see
the relevant data sheet or data handbook.
Limiting values definition Limiting values given are in
accordance with the Absolute Maximum Rating System
(IEC 60134). Stress above one or more of the limiting
values may cause permanent damage to the device.
These are stress ratings only and operation of the device
at these or at any other conditions above those given in the
Characteristics sections of the specification is not implied.
Exposure to limiting values for extended periods may
affect device reliability.
Application information Applications that are
described herein for any of these products are for
illustrative purposes only. Philips Semiconductors make
no representation or warranty that such applications will be
suitable for the specified use without further testing or
modification.
DISCLAIMERS
Life support applications These products are not
designed for use in life support appliances, devices, or
systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips
Semiconductors customers using or selling these products
for use in such applications do so at their own risk and
agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Right to make changes Philips Semiconductors
reserves the right to make changes, without notice, in the
products, including circuits, standard cells, and/or
software, described or contained herein in order to
improve design and/or performance. Philips
Semiconductors assumes no responsibility or liability for
the use of any of these products, conveys no licence or title
under any patent, copyright, or mask work right to these
products, and makes no representations or warranties that
these products are free from patent, copyright, or mask
work right infringement, unless otherwise specified.
2000 Sep 05 11
Philips Semiconductors Preliminary specification
Integrated rotational speed sensor KMI18/2
NOTES
Ldé male My; beflw “21:1? oooooooooo @ PHILIPS
© Philips Electronics N.V. SCA
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2000 70
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Printed in The Netherlands 613520/01/pp12 Date of release: 2000 Sep 05 Document order number: 9397 750 07254