NXP USA Inc. 的 1PS184 规格书

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DATA SHEET
Product data sheet
Supersedes data of April 1996
1996 Sep 03
DISCRETE SEMICONDUCTORS
1PS184
High-speed double diode
db
ook, halfpage
M3D114
1996 Sep 03 2
NXP Semiconductors Product data sheet
High-speed double diode 1PS184
FEATURES
•Small plastic SMD package
•High switching speed: max. 4 ns
•Continuous reverse voltage:
max. 80 V
•Repetitive peak reverse voltage:
max. 85 V
•Repetitive peak forward current:
max. 500 mA.
APPLICATIONS
•High-speed switching in e.g.
surface mounted circuits.
DESCRIPTION
The 1PS184 consists of two
high-speed switching diodes with
common cathodes, fabricated in
planar technology, and encapsulated
in the small plastic SMD SC59
package.
PINNING
PIN DESCRIPTION
1anode (a1)
2anode (a2)
3common cathode
Fig.1 Simplified outline (SC59) and symbol.
Top view
21
3
MAM084
21
3
Marking code: B3T.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Note
1. Device mounted on an FR4 printed-circuit board.
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
Per diode
VRRM repetitive peak reverse voltage −85 V
VRcontinuous reverse voltage −80 V
IFcontinuous forward current single diode loaded; see Fig.2;
note 1
−215 mA
double diode loaded; see Fig.2;
note 1
−125 mA
IFRM repetitive peak forward current −500 mA
IFSM non-repetitive peak forward current square wave; Tj = 25 °C prior to
surge
t = 1 μs−4 A
t = 1 s −0.5 A
Ptot total power dissipation Tamb = 25 °C; note 1 −250 mW
Tstg storage temperature −65 +150 °C
Tjjunction temperature −150 °C
1996 Sep 03 3
NXP Semiconductors Product data sheet
High-speed double diode 1PS184
ELECTRICAL CHARACTERISTICS
Tj = 25 °C; unless otherwise specified.
THERMAL CHARACTERISTICS
Note
1. Device mounted on an FR4 printed-circuit board.
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
Per diode
VFforward voltage see Fig.3
IF = 1 mA 610 −mV
IF = 10 mA 740 −mV
IF = 50 mA −1.0 V
IF = 100 mA −1.2 V
IRreverse current see Fig.4
VR = 25 V −30 nA
VR = 80 V −0.5 μA
VR = 25 V; Tj = 150 °C−30 μA
VR = 80 V; Tj = 150 °C−100 μA
Cddiode capacitance f = 1 MHz; VR = 0; see Fig.5 −1.5 pF
trr reverse recovery time when switched from IF = 10 mA to
IR = 10 mA; RL = 100 Ω; measured
at IR = 1 mA; see Fig.6
−4ns
Vfr forward recovery voltage when switched from IF = 10 mA;
tr = 20 ns; see Fig.7
−1.75 V
SYMBOL PARAMETER CONDITIONS VALUE UNIT
Rth j-tp thermal resistance from junction to tie-point 250 K/W
Rth j-a thermal resistance from junction to ambient note 1 500 K/W
200 smgie diode issued doubie made inaded i on o 100 200 Tamb (”0) Device moumed on an FR4 prinieflrcncuit board Fig.2 Maximum permissible continuous iorward current as a iunction oi ambient temperaiure. 200 ion m TFTSOEC lypicaivaiues (2) T 2570 |ypicaivaiues (3) T‘ 2570 maximumvalues Fig.3 Forward current as a iun voltage. a 100 1996 Sep 03
1996 Sep 03 4
NXP Semiconductors Product data sheet
High-speed double diode 1PS184
GRAPHICAL DATA
Device mounted on an FR4 printed-circuit board.
Fig.2 Maximum permissible continuous forward
current as a function of ambient
temperature.
0 200
300
0
100
200
MBD033
100
IF
(mA)
T ( C)
amb o
single diode loaded
double diode loaded
(1) Tj = 150 °C; typical values.
(2) Tj = 25 °C; typical values.
(3) Tj = 25 °C; maximum values.
Fig.3 Forward current as a function of forward
voltage.
handbook, halfpage
02
300
IF
(mA)
0
100
200
MBG382
1VF (V)
(1) (3)(2)
handbook, halfpage
10
2
10
200
0
MBG380
100 Tj (
o
C)
IR
(μA)
1
10
2
10
1
(1) (2) (3)
Fig.4 Reverse current as a function of junction
temperature.
(1) VR = 80 V; maximum values.
(2) VR = 80 V; typical values.
(3) VR = 25 V; typical values.
Fig.5 Diode capacitance as a function of reverse
voltage; typical values.
f = 1 MHz; Tj = 25 °C.
handbook, halfpage
0816124
0.8
0.6
0
0.4
0.2
MBG446
VR (V)
Cd
(pF)
osm LLOSCOFE
1996 Sep 03 5
NXP Semiconductors Product data sheet
High-speed double diode 1PS184
Fig.6 Reverse recovery voltage test circuit and waveforms.
handbook, full pagewidth
trr
(1)
IFt
output signal
trt
tp
10%
90%
VR
input signal
V = V I x R
RF S
R = 50
SΩ
IF
D.U.T.
R = 50
iΩ
SAMPLING
OSCILLOSCOPE
MGA881
(1) IR = 1 mA.
Fig.7 Forward recovery voltage test circuit and waveforms.
tr
t
tp
10%
90%
I
input
signal
R = 50
SΩ
I
R = 50
iΩ
OSCILLOSCOPE
Ω1 k Ω450
D.U.T.
MGA882
Vfr
t
output
signal
V
NXP Semiconductors Product data sheet High-speed double diode 1 P8184 PACKAGE OUTLINE ea} e am Dwmenslnns m mm Fig.8 8659. 1996 Sep 03 6
1996 Sep 03 6
NXP Semiconductors Product data sheet
High-speed double diode 1PS184
PACKAGE OUTLINE
Fig.8 SC59.
Dimensions in mm.
msa31
3
1.3
1.0
0.100
0.013
0.26
0.10
0.6
0.2
1.7
1.3
A
2.1
1.7
3.1
2.7
3.0
2.5
AM
0.2 0.50
0.35
3
2
1
1.65
1.25
1996 Sep 03 7
NXP Semiconductors Product data sheet
High-speed double diode 1PS184
DATA SHEET STATUS
Notes
1. Please consult the most recently issued document before initiating or completing a design.
2. The product status of device(s) described in this document may have changed since this document was published
and may differ in case of multiple devices. The latest product status information is available on the Internet at
URL http://www.nxp.com.
DOCUMENT
STATUS(1) PRODUCT
STATUS(2) DEFINITION
Objective data sheet Development This document contains data from the objective specification for product
development.
Preliminary data sheet Qualification This document contains data from the preliminary specification.
Product data sheet Production This document contains the product specification.
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values (as defined in the Absolute Maximum Ratings
System of IEC 60134) may cause permanent damage to
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Printed in The Netherlands 1996 Sep 03