Texas Instruments 的 DS26C32AT/AM 规格书

DS26C32AM, DS26C32AT
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SNLS382C –JUNE 1998–REVISED APRIL 2013
DS26C32AT/DS26C32AM Quad Differential Line Receiver
Check for Samples: DS26C32AM,DS26C32AT
1FEATURES DESCRIPTION
The DS26C32A is a quad differential line receiver
2• CMOS Design for Low Power designed to meet the RS-422, RS-423, and Federal
• ±0.2V Sensitivity over Input Common Mode Standards 1020 and 1030 for balanced and
Voltage Range unbalanced digital data transmission, while retaining
• Typical Propagation Delays: 19 ns the low power characteristics of CMOS.
• Typical Input hysteresis: 60 mV The DS26C32A has an input sensitivity of 200 mV
over the common mode input voltage range of ±7V.
• Inputs Won't Load Line When VCC = 0V The DS26C32A features internal pull-up and pull-
• Meets the Requirements of EIA Standard RS- down resistors which prevent output oscillation on
422 unused channels.
• TRI-STATE Outputs for Connection to System The DS26C32A provides an enable and disable
Buses function common to all four receivers. It also features
• Available in Surface Mount TRI-STATE outputs with 6 mA source and sink
• Mil-Std-883C Compliant capability. This product is pin compatible with the
DS26LS32A and the AM26LS32.
Logic Diagram
1
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
2All trademarks are the property of their respective owners.
PRODUCTION DATA information is current as of publication date. Copyright © 1998–2013, Texas Instruments Incorporated
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.
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DS26C32AM, DS26C32AT
SNLS382C –JUNE 1998–REVISED APRIL 2013
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Connection Diagrams
Top View
For Complete Military Product Specifications, refer to the appropriate SMD or MDS.
Figure 1. PDIP Package
See Package Number D0016A or NFG0016E
See Package Number NAJ0020A, NFE0016A or NAD0016A
Top View
Figure 2. 20-Lead Ceramic Leadless Chip Carrier
LCCC Package
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
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Absolute Maximum Ratings(1)(2)(3)
Supply Voltage (VCC) 7V
Common Mode Range (VCM) ±14V
Differential Input Voltage (V DIFF) ±14V
Enable Input Voltage (V IN) 7V
Storage Temperature Range (T STG)−65°C to +150°C
Lead Temperature (Soldering 4 sec.) 260°C
Maximum Power Dissipation at 25°C (4)
Ceramic NFE0016A Package 2308 mW
Plastic NFG0016E Package 1645 mW
SOIC D0016A Package 1190 mW
Ceramic NAJ0020A Package 2108 mW
Ceramic NAD0016A Package 1215 mW
Maximum Current Per Output ±25 mA
This device does not meet 2000V ESD rating.(5)
(1) Absolute Maximum Ratings are those values beyond which the safety of the device cannot be ensured. They are not meant to imply that
the device should be operated at these limits. The table of “Electrical Characteristics” provides conditions for actual device operation.
(2) Unless otherwise specified, all voltages are referenced to ground.
(3) If Military/Aerospace specified devices are required, please contact the TI Sales Office/Distributors for availability and specifications
(4) Ratings apply to ambient temperature at 25°C. Above this temperature derate N Package 13.16 mW/°C, J Package 15.38 mW/°C, M
Package 9.52 mW/°C, E Package 12.04 mW/°C, and W package 6.94 mW/°C.
(5) ESD Rating: HBM (1.5 kΩ, 100 pF) Inputs ≥2000V All other pins ≥1000V EIAJ (0Ω, 200 pF) ≥350V
Operating Conditions
Min Max Units
Supply Voltage (VCC) 4.50 5.50 V
Operating Temperature Range (TA)
DS26C32AT −40 +85 °C
DS26C32AM −55 +125 °C
Enable Input Rise or Fall Times 500 ns
DC Electrical Characteristics
VCC = 5V ±10% (unless otherwise specified)(1)
Parameter Test Conditions Min Typ Max Units
VTH Minimum Differential V OUT = VOH or VOL −200 35 +200 mV
Input Voltage −7V < VCM < +7V
RIN Input Resistance VIN =−7V, +7V DS26C32AT 5.0 6.8 10 kΩ
(Other Input = GND) DS26C32AM 4.5 6.8 11 kΩ
IIN Input Current VIN = +10V, DS26C32AT +1.1 +1.5 mA
Other Input = GND DS26C32AM +1.1 +1.8 mA
VIN =−10V, DS26C32AT −2.0 −2.5 mA
Other Input = GND DS26C32AM −2.0 −2.7 mA
VOH Minimum High Level V CC = Min, VDIFF = +1V 3.8 4.2 V
Output Voltage IOUT =−6.0 mA
VOL Maximum Low Level V CC = Max, VDIFF =−1V 0.2 0.3 V
Output Voltage IOUT = 6.0 mA
VIH Minimum Enable High 2.0 V
Input Level Voltage
VIL Maximum Enable Low 0.8 V
Input Level Voltage
(1) Absolute Maximum Ratings are those values beyond which the safety of the device cannot be ensured. They are not meant to imply that
the device should be operated at these limits. The table of “Electrical Characteristics” provides conditions for actual device operation.
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DC Electrical Characteristics (continued)
VCC = 5V ±10% (unless otherwise specified)(1)
Parameter Test Conditions Min Typ Max Units
IOZ Maximum TRI-STATE V OUT = VCC or GND, ±0.5 ±5.0 μA
Output Leakage Current ENABLE = VIL,
ENABLE = VIH
IIMaximum Enable Input V IN = VCC or GND ±1.0 μA
Current
ICC Quiescent Power VCC = Max, DS26C32AT 16 23 mA
Supply Current VDIF = +1V DS26C32AM 16 25 mA
VHYST Input Hysteresis V CM = 0V 60 mV
AC Electrical Characteristics
VCC = 5V ±10% (1)
Max
Parameter Test Conditions Min Typ Units
DS26C32AT DS26C32AM
tPLH, Propagation Delay CL= 50 pF 10 19 30 35 ns
tPHL Input to Output VDIFF = 2.5V
VCM = 0V
tRISE, Output Rise and CL= 50 pF 4 9 9 ns
tFALL Fall Times VDIFF = 2.5V
VCM = 0V
tPLZ, Propagation Delay CL= 50 pF 13 22 29 ns
tPHZ ENABLE to Output RL= 1000Ω
VDIFF = 2.5V
tPZL, Propagation Delay CL= 50 pF 13 23 29 ns
tPZH ENABLE to Output RL= 1000Ω
VDIFF = 2.5V
(1) Unless otherwise specified, Min/Max limits apply over recommended operating conditions. All typicals are given for VCC = 5V and TA=
25°C.
Comparison Table of Switching Characteristics into “LS-Type” Load
(Figure 6,Figure 7, and Figure 8)(1)
DS26C32A DS26LS32A
Parameter Test Conditions Units
Typ Typ
tPLH Input to Output CL= 15 pF 17 23 ns
tPHL 19 23 ns
tLZ ENABLE to Output CL= 5 pF 13 15 ns
tHZ 12 20 ns
tZL ENABLE to Output CL= 15 pF 13 14 ns
tZH 13 15 ns
(1) This table is provided for comparison purposes only. The values in this table for the DS26C32A reflect the performance of the device,
but are not tested.
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SNLS382C –JUNE 1998–REVISED APRIL 2013
TEST AND SWITCHING WAVEFORMS
Figure 3. Propagation Delay
CLincludes load and test jig capacitance.
S1= VCC for t PZL, and tPLZ measurements.
S1= Gnd for tPZH and tPHZ measurements.
Figure 4. Test Circuit for TRI-STATE Output Tests
Figure 5. TRI-STATE Output Enable and Disable Waveforms
AC Test Circuit and Switching Time Waveforms
Figure 6. Load Test Circuit for TRI-STATE Outputs for “LS-Type” Load
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DS26C32AM, DS26C32AT
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Figure 7. Propagation Delay for “LS-Type” Load
(1) Diagram shown for ENABLE low.
(2) S1 and S2 of load circuit are closed except where shown.
(3) Pulse generator for all pulses: Rate ≤1.0 MHz; ZO= 50Ω; tr≤15 ns; t f≤6.0 ns.
Figure 8. Enable and Disable Times for “LS-Type” Load
Truth Table(1)
ENABLE ENABLE Input Output
L H X Z
All Other VID ≥VTH (Max) H
Combinations of VID ≤VTH (Min) L
Enable Inputs Open H
(1) Z = TRI-STATE
TYPICAL APPLICATIONS
Figure 9. Two-Wire Balanced Systems, RS-422
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SNLS382C –JUNE 1998–REVISED APRIL 2013
Typical Performance Characteristics
Differential Propagation Delay Differential Propagation Delay
vs Temperature vs Power Supply Voltage
Figure 10. Figure 11.
Differential Skew
vs
Differential Skew vs Power
Temperature Supply Voltage
Figure 12. Figure 13.
Output High Voltage vs Output High Voltage vs
Output High Current Output High Current
Figure 14. Figure 15.
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DS26C32AM, DS26C32AT
SNLS382C –JUNE 1998–REVISED APRIL 2013
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Typical Performance Characteristics (continued)
Output Low Voltage vs Output Low Voltage vs
Output Low Current Output Low Current
Figure 16. Figure 17.
Input Current
vs
Input Resistance vs Power
Input Voltage Supply Voltage
Figure 18. Figure 19.
Hysteresis & Differential Hysteresis & Differential
Transition Voltage vs Transition Voltage vs
Temperature Power Supply Voltage
Figure 20. Figure 21.
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DS26C32AM, DS26C32AT
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SNLS382C –JUNE 1998–REVISED APRIL 2013
Typical Performance Characteristics (continued)
Supply Current vs Disabled Supply Current vs
Temperature Power Supply Voltage
Figure 22. Figure 23.
Supply Current vs
Data Rate
Figure 24.
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REVISION HISTORY
Changes from Revision B (April 2013) to Revision C Page
• Changed layout of National Data Sheet to TI format ............................................................................................................ 9
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PACKAGE OPTION ADDENDUM
www.ti.com 10-Dec-2020
Addendum-Page 1
PACKAGING INFORMATION
Orderable Device Status
(1)
Package Type Package
Drawing Pins Package
Qty Eco Plan
(2)
Lead finish/
Ball material
(6)
MSL Peak Temp
(3)
Op Temp (°C) Device Marking
(4/5)
Samples
DS26C32ATM/NOPB ACTIVE SOIC D 16 48 RoHS & Green SN Level-1-260C-UNLIM -40 to 85 DS26C32ATM
DS26C32ATMX/NOPB ACTIVE SOIC D 16 2500 RoHS & Green SN Level-1-260C-UNLIM -40 to 85 DS26C32ATM
(1) The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2) RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance
do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may
reference these types of products as "Pb-Free".
RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption.
Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of <=1000ppm threshold. Antimony trioxide based
flame retardants must also meet the <=1000ppm threshold requirement.
(3) MSL, Peak Temp. - The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.
(4) There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device.
(5) Multiple Device Markings will be inside parentheses. Only one Device Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuation
of the previous line and the two combined represent the entire Device Marking for that device.
(6) Lead finish/Ball material - Orderable Devices may have multiple material finish options. Finish options are separated by a vertical ruled line. Lead finish/Ball material values may wrap to two
lines if the finish value exceeds the maximum column width.
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information
provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and
continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.
TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.
In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.
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PACKAGE OPTION ADDENDUM
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Addendum-Page 2
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TAPE AND REEL INFORMATION
*All dimensions are nominal
Device Package
Type Package
Drawing Pins SPQ Reel
Diameter
(mm)
Reel
Width
W1 (mm)
A0
(mm) B0
(mm) K0
(mm) P1
(mm) W
(mm) Pin1
Quadrant
DS26C32ATMX/NOPB SOIC D 16 2500 330.0 16.4 6.5 10.3 2.3 8.0 16.0 Q1
PACKAGE MATERIALS INFORMATION
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Pack Materials-Page 1
l TEXAS INSTRUMENTS TAPE AND REEL BOX DIMENSIONS
*All dimensions are nominal
Device Package Type Package Drawing Pins SPQ Length (mm) Width (mm) Height (mm)
DS26C32ATMX/NOPB SOIC D 16 2500 367.0 367.0 35.0
PACKAGE MATERIALS INFORMATION
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Pack Materials-Page 2
l TEXAS INSTRUMENTS T - Tube height| L - Tube length l ,g + w-Tuhe _______________ _ ______________ width 47 — B - Alignment groove width
TUBE
*All dimensions are nominal
Device Package Name Package Type Pins SPQ L (mm) W (mm) T (µm) B (mm)
DS26C32ATM/NOPB D SOIC 16 48 495 8 4064 3.05
PACKAGE MATERIALS INFORMATION
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Pack Materials-Page 3
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